公开(公告)号：US11315978B2

公开(公告)日：2022-04-26

申请号：US16857839

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min Lee ,  Seokjin Kwon ,  Hyeyun Park ,  Beomsuk Lee ,  Dongmo Im

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US11038419B2

公开(公告)日：2021-06-15

申请号：US17032808

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Dongmo Im

IPC: H02M3/07 ,  H04N5/361

Abstract: A charge pump device is configured to generate an output voltage from a square wave, where the charge pump device includes a semiconductor layer; first and second outer wells; a first inner well formed in the first outer well; a second inner well formed in the second outer well; a first capacitor, to which the input signal is applied, and connected to the first outer well; and a second capacitor connected to the first capacitor and second outer well, wherein the first voltage is applied to the first outer well, and a voltage that is lower than the first voltage is applied to the second outer well.

公开(公告)号：US11025844B2

公开(公告)日：2021-06-01

申请号：US16674202

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Seungsik Kim ,  Jungchak Ahn ,  Jaekyu Lee ,  Dongmo Im ,  Dongseok Cho

IPC: H04N5/355

Abstract: A method of driving an image sensor includes integrating an overflowed charge from a photodiode in the floating diffusion area and a dynamic range capacitor. The dynamic range capacitor is formed between the floating diffusion area and a power supply voltage. The method further includes sampling a first voltage formed in the floating diffusion area by the integrated overflowed charge, resetting the photodiode, the floating diffusion area, and the dynamic range capacitor, sampling a reset level of the reset floating diffusion area, transferring a charge accumulated in the photodiode to the floating diffusion area, and sampling a second voltage formed in the floating diffusion area.