公开(公告)号：US09753503B2

公开(公告)日：2017-09-05

申请号：US14826203

申请日：2015-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Jae Han ,  Dong-Min Kim ,  Jin-Hwan Choi

IPC: G06F1/16 ,  G06F1/18 ,  G06K7/00

CPC classification number: G06F1/183 ,  G06F1/1613 ,  G06F1/1679 ,  G06K7/0026 ,  G06K13/085 ,  G06K13/0856

Abstract: A data processing apparatus includes an electronic device configured to store data and instructions; a memory card; and a memory card socket in which the memory card is inserted. In certain disclosed systems and methods, the memory card socket includes: an insertion portion through which the memory card is inserted; a lock portion formed around an edge of the insertion portion, and that is configured to control attaching and detaching of the memory card based on instructions received from the electronic device; and a main body including the insertion portion and the lock portion and configured to accommodate the memory card via the insertion portion.

公开(公告)号：US12161465B2

公开(公告)日：2024-12-10

申请号：US16316194

申请日：2016-12-29

Applicant: Samsung Electronics Co., Ltd. ,  INSTITUTE FOR RESEARCH & INDUSTRY COOPERATION, PUSAN NATIONAL UNIVERSITY

Inventor： Kwang-bok Kim ,  Yoon-Bo Shim ,  Han-gyol Park ,  Youn-joo Song ,  Seong-je Cho ,  Chul-ho Cho ,  Dong-Min Kim

IPC: A61B5/1486 ,  A61B5/145 ,  C08G61/12 ,  C12Q1/00 ,  C25B3/29 ,  G01N27/327

Abstract: Disclosed is a biosensor. The biosensor comprises: an electrode; and a polymer structure disposed on the electrode and formed of poly-5,2′:5′,2″-terthiophene-3′-carboxylic acid (pTTCA), wherein an enzyme is present in a state of covalently binding with pTTCA inside the polymer structure.

公开(公告)号：US11899980B2

公开(公告)日：2024-02-13

申请号：US17969959

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunsoo Cho ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0644 ,  G06F3/0679

Abstract: An operation method of a UFS device including: determining, by a host, area information for write data, wherein in a turbo read the write data is stored in a non-pinned or pinned buffer area and in a normal read the write data is stored in a user storage; transferring, by the host, a first command UFS protocol information unit (UPIU); transferring, by the UFS device, an RTT UPIU to the host, transferring, by the host, a DATA OUT UPIU to the UFS device; mapping, by UFS device, a first logical block address with a physical address of an area corresponding to the area information; transferring, by the host, a second command UPIU; and performing the turbo read on the area to read data corresponding to the first logical block address when the area corresponding to the area information is the pinned or non-pinned turbo write buffer.

公开(公告)号：US11797210B2

公开(公告)日：2023-10-24

申请号：US17369884

申请日：2021-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Jin Jung ,  Dong-Min Kim ,  Jeong-Woo Park ,  Kyoung Back Lee

IPC: G06F3/06

CPC classification number: G06F3/0644 ,  G06F3/0604 ,  G06F3/0679

Abstract: A memory system includes a host device including a host controller, and a memory device including a device controller and a non-volatile storage including a purge region and a memory region. The device controller communicates purge information associated with the purge region and including size information of the purge region. The host controller communicates a request for generating a first partition for a first logical unit in the memory region, and communicates a request for generating a second partition for a second logical unit in the purge region in response to the size information of the purge region.

公开(公告)号：US10896005B2

公开(公告)日：2021-01-19

申请号：US16657225

申请日：2019-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Min Kim

IPC: G06F3/06 ,  G06F11/07

Abstract: A method includes transmitting a command signal including a time-out time from a host to a storage device; determining, by the storage device, a first time amount, which is an amount of time required for the storage device to perform an operation corresponding to the command signal; when the first time amount is not greater than the time-out time, providing a first response signal including a success flag from the storage device to the host after the storage device performs the operation within the time-out time; when the first time amount is longer than the time-out time, providing a second response signal including the first time amount and a time-out reset flag from the storage device to the host; and when the host receives the second response signal, retransmitting the command signal to the storage device after the host resets the time-out time to the first time amount.

公开(公告)号：US09329504B2

公开(公告)日：2016-05-03

申请号：US13681068

申请日：2012-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyun Park ,  Sang-Don Jang ,  Dong-Seok Baek ,  Ki-Hyun Kim ,  Sang-Min Lee ,  Dong-Min Kim

IPC: G03B27/42 ,  G03F9/00 ,  G03B27/32 ,  G03F7/20

CPC classification number: G03F9/7069 ,  G03B27/32 ,  G03B27/42 ,  G03F7/70258 ,  G03F7/70275 ,  G03F7/70791 ,  G03F9/7003 ,  G03F9/7011 ,  G03F9/7015 ,  G03F9/7019 ,  G03F9/7088

Abstract: An origin of a reference coordinate system is assigned to one of a plurality of center points, and center point coordinates according to the reference coordinate system are assigned to remaining center points, so that reference marks successively correspond to center points of a plurality of microscopes fixed to a base. Beam position detection marks disposed between the reference marks with exposure points of exposure heads fixed to the base are crossed to assign beam coordinates according to the reference coordinate system to the exposure points. Thus, alignment may be easily and accurately performed, and is effective for increasingly larger apparatuses.

Abstract translation: 参考坐标系的原点被分配给多个中心点之一，并且根据参考坐标系的中心点坐标被分配给剩余的中心点，使得参考标记连续对应于固定的多个显微镜的中心点 到一个基地 将布置在参考标记与固定到基座的曝光头的曝光点之间的光束位置检测标记交叉，以将根据参考坐标系的光束坐标分配给曝光点。 因此，可以容易且准确地进行对准，并且对于越来越大的装置是有效的。

公开(公告)号：US09076539B2

公开(公告)日：2015-07-07

申请号：US14105782

申请日：2013-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Kyung Kim ,  Dong-Min Kim ,  Hong-Sun Hwang

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1697

Abstract: A memory device includes a cell array and a common source line compensation circuit. The cell array includes a plurality of normal cell units connected between a plurality of bit lines and one common source line, respectively. The common source line compensation circuit supplies a plurality of compensation write currents to the common source line to compensate for a plurality of write currents concurrently input into or output from the common source line through the normal cell units.

Abstract translation: 存储器件包括单元阵列和公共源极线补偿电路。 单元阵列包括分别连接在多个位线和一个公共源极线之间的多个正常单元单元。 公共源极线补偿电路向公共源极线提供多个补偿写入电流，以补偿通过正常单元单元同时输入到共用源极线或从共模源极线输出的多个写入电流。

公开(公告)号：US12229438B2

公开(公告)日：2025-02-18

申请号：US18149560

申请日：2023-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo Kim ,  Songho Yoon ,  Jeong-Woo Park ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

Abstract: A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.

公开(公告)号：US20240020426A1

公开(公告)日：2024-01-18

申请号：US18189412

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jimin Ryu ,  Yonghwan Song ,  Jaegyu Lee ,  Dong-Min Kim ,  Byungjune Song ,  Myeongjong Lee ,  Daejin Jung

IPC: G06F21/79 ,  G06F21/60 ,  G06F21/55

CPC classification number: G06F21/79 ,  G06F21/602 ,  G06F21/556

Abstract: A method for managing a replay protection memory block (RPMB) of a storage device includes allocating an RPMB master region managed separately from an RPMB region in which an RPMB key is stored in the RPMB of the storage device, programming a master key into the RPMB master region responsive to a request from a host, receiving a reset request for the RPMB region using the master key from the host, resetting the RPMB key in response to the reset request for the RPMB region, and receiving a reset lock request for the RPMB region from the host.

公开(公告)号：US11573732B2

公开(公告)日：2023-02-07

申请号：US16901332

申请日：2020-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Woo Kim ,  Songho Yoon ,  Jeong-Woo Park ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

Abstract: A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.