公开(公告)号：US20210234050A1

公开(公告)日：2021-07-29

申请号：US17231120

申请日：2021-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/775 ,  B82Y10/00 ,  H01L29/08 ,  H01L27/092

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20200303523A1

公开(公告)日：2020-09-24

申请号：US16889899

申请日：2020-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Chan SUH ,  Sangmoon LEE ,  Yihwan KIM ,  Woo Bin SONG ,  Dongsuk SHIN ,  Seung Ryul LEE

IPC: H01L29/66 ,  H01L21/28 ,  H01L29/786 ,  H01L29/423

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

公开(公告)号：US20190288121A1

公开(公告)日：2019-09-19

申请号：US16435263

申请日：2019-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L29/775 ,  H01L21/8238 ,  B82Y10/00 ,  H01L27/092

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

公开(公告)号：US20170373062A1

公开(公告)日：2017-12-28

申请号：US15494769

申请日：2017-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Seung Yang ,  Dong Chan SUH ,  Chul KIM ,  Woo Bin SONG ,  Ji Eon YOON ,  Seung Ryul LEE

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

Abstract: The semiconductor device includes a first multi-channel active pattern protruding from a substrate, and having a first height, a second multi-channel active pattern on the substrate, being spaced apart from the substrate, and having a second height that is less than the first height, and a gate electrode on the substrate, intersecting the first multi-channel active pattern and the second multi-channel active pattern.

公开(公告)号：US20170345945A1

公开(公告)日：2017-11-30

申请号：US15373065

申请日：2016-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hun LEE ,  Dong Woo KIM ,  Dong Chan SUH ,  Sun Jung KIM

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/06 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.