公开(公告)号：US20240105604A1

公开(公告)日：2024-03-28

申请号：US18526208

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Hun Lee ,  Seokjung Yun ,  Chang-Sup Lee ,  Seong Soon Cho ,  Jeehoon Han

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76877 ,  H01L23/5226 ,  H10B41/20 ,  H10B41/27 ,  H10B43/10 ,  H10B43/20 ,  H10B43/27 ,  H10B43/35 ,  H10B43/50

Abstract: A three-dimensional (3D) semiconductor device includes a stack structure including first and second stacks stacked on a substrate. Each of the first and second stacks includes a first electrode and a second electrode on the first electrode. A sidewall of the second electrode of the first stack is horizontally spaced apart from a sidewall of the second electrode of the second stack by a first distance. A sidewall of the first electrode is horizontally spaced apart from the sidewall of the second electrode by a second distance in each of the first and second stacks. The second distance is smaller than a half of the first distance.

公开(公告)号：US20180315772A1

公开(公告)日：2018-11-01

申请号：US16019119

申请日：2018-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Sup Lee ,  Sung-Hun Lee ,  Joonhee Lee ,  Seong Soon Cho

IPC: H01L27/11582 ,  H01L23/535 ,  H01L29/423 ,  H01L27/11556 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L29/42328 ,  H01L29/42344

Abstract: A three-dimensional semiconductor memory device includes a substrate including a cell array region and a connection region and an electrode structure including first and second electrodes alternatingly and vertically stacked on the substrate and having a stair-step structure on the connection region. Each of the first and second electrodes may include electrode portions provided on the cell array region to extend in a first direction and to be spaced apart from each other in a second direction perpendicular to the first direction, an electrode connecting portion provided on the connection region to extend in the second direction and to horizontally connect the electrode portions to each other, and protrusions provided on the connection region to extend from the electrode connecting portion in the first direction and to be spaced apart from each other in the second direction.