Abstract:
A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.
Abstract:
A display device includes a display panel including a transistor and a backlight unit providing light to the display panel. The transistor includes a transparent substrate that the backlight unit faces. A gate electrode having a first width is disposed on the transparent substrate. A gate insulating layer, having a barrier layer, is disposed on the gate electrode and the transparent substrate. A semiconductor layer is disposed on the gate insulating layer. The semiconductor layer has a second width greater than the first width.
Abstract:
A display device includes a via layer disposed on a substrate and including a via groove having a shape recessed from a first surface to a second surface of the via layer. A first electrode is disposed on the first surface. A pixel-defining film is disposed on the via layer and the first electrode. A first pixel-defining film through-hole passes through the pixel-defining film in a thickness direction and exposes the first electrode. A second pixel-defining film through-hole passes through the pixel-defining film in the thickness direction. The second pixel-defining film through-hole is spaced apart from the first pixel-defining film through-hole and overlaps the via groove. An emission layer is disposed on an exposed portion of the first electrode. A protrusion is disposed on the pixel-defining film and includes a protrusion through-hole which passes through the protrusion in the thickness direction and overlaps the second pixel-defining film through-hole.
Abstract:
A liquid crystal display includes: a lower display panel including a lower polarizing plate disposed between a lower transparent substrate and a passivation layer of the lower display panel; and an upper display panel including an upper polarizing plate disposed between an upper transparent substrate and a passivation layer of the upper display panel, wherein at least one of the lower polarizing plate and the upper polarizing plate is a reflection type polarizing plate and includes a plurality of linear patterns arranged so as to be extended in one direction and a hydrophobic layer covering at least portion of side wall portions of the linear patterns.
Abstract:
In a device for detecting a defect, the device includes: an image pickup unit including pixels, the image pickup unit generating a substrate image by picking up an image of a substrate having patterns formed on a top surface thereof; and a controller for detecting a defect located on the substrate, based on the substrate image, wherein the substrate image includes pattern images corresponding to the patterns, wherein each of the pattern images includes pixel values, wherein the controller detects the defect by comparing weights of pixel values for each of the pattern images.
Abstract:
Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.
Abstract:
A manufacturing method of a liquid crystal display includes: forming an etch target layer including a conductive material on a first substrate; forming a first mask layer on the etch target layer; forming a block copolymer coating layer including a plurality of polymers on the first mask layer; processing the block copolymer coating layer to form a block copolymer pattern layer including first and second polymer blocks; removing one of the first or second polymer blocks to form a second mask pattern layer; etching the first mask layer by using the second mask pattern layer as an etching mask to form a first mask pattern layer; and etching the etch target layer by using the first mask pattern layer as an etching mask to form a first electrode. The first electrode includes a plurality of the first minute patterns extending in a predetermined direction and having a polarization function.
Abstract:
An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.