公开(公告)号：US20190326442A1

公开(公告)日：2019-10-24

申请号：US16451593

申请日：2019-06-25

Applicant: SAMSUNG DISPLAY CO, LTD.

Inventor： Seung Ho JUNG ,  Chaun Gi Choi ,  Hye Young Park ,  Eun Young Lee ,  Joo Hee Jeon ,  Eun Jeong Cho ,  Bo Geon Jeon ,  Yung Bin Chung

IPC: H01L29/786 ,  H01L51/00 ,  H01L27/12 ,  H01L29/78 ,  H01L51/52

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

公开(公告)号：US09859305B2

公开(公告)日：2018-01-02

申请号：US15130654

申请日：2016-04-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin Chung ,  Bo Geon Jeon ,  Eun Jeong Cho ,  Tae Young Ahn ,  Woo Seok Jeon ,  Sung Hoon Yang

IPC: H01L21/306 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/45 ,  H01L29/423 ,  H01L21/3213 ,  H01L21/465 ,  H01L21/4763

CPC classification number: H01L27/1222 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/465 ,  H01L21/47635 ,  H01L27/1262 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/78606

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

公开(公告)号：US11450722B2

公开(公告)日：2022-09-20

申请号：US16871523

申请日：2020-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： Doo Na Kim ,  Keun Woo Kim ,  Tae Wook Kang ,  Do Kyeong Lee ,  Yong Su Lee ,  Jae Hwan Chu ,  Kwang Hyun Kim ,  Yeoung Keol Woo ,  Yung Bin Chung

IPC: H01L27/14 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.

公开(公告)号：US20220037435A1

公开(公告)日：2022-02-03

申请号：US17504927

申请日：2021-10-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin Chung ,  Yeoungkeol Woo ,  Kwanghyun Kim ,  Sangwoo Sohn ,  Dokeun Song ,  Sangwook Lee ,  Heon Sik Ha

IPC: H01L27/32 ,  H01L27/12

Abstract: A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.

公开(公告)号：USD933654S1

公开(公告)日：2021-10-19

申请号：US29643664

申请日：2018-04-10

Applicant: Samsung Display Co., Ltd.

Designer： Yung Bin Chung ,  Kee Hyun Nam ,  Jun-Sang Lyu ,  Eui Ri Cho ,  Kyung Hyun Ko ,  Jun Il Kwon ,  Sung-Hee Lee ,  Woo-Jong Lee ,  Hyun Joo Lee ,  Ho Jung Lee ,  Jae Beom Choi

公开(公告)号：US09406704B1

公开(公告)日：2016-08-02

申请号：US14799995

申请日：2015-07-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin Chung ,  Chul-Hyun Baek ,  Eun Jeong Cho ,  Jung Yun Jo

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/417 ,  H01L21/02

Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.