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公开(公告)号:US20220254863A1
公开(公告)日:2022-08-11
申请号:US17732797
申请日:2022-04-29
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Kyeong Su KO , Joon Yong Park , Gyung Min Baek , Hyun Min Cho , Dae Won Choi
Abstract: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.
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12.
公开(公告)号:US10386687B2
公开(公告)日:2019-08-20
申请号:US15906991
申请日:2018-02-27
Applicant: Samsung Display Co., Ltd.
Inventor: Chan Woo Yang , Hong Sick Park , Hyun Eok Shin , Joon Yong Park , Gyung Min Baek , Sang Won Shin , Ju Hyun Lee
IPC: H01L27/12 , H01L29/49 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/285 , H01L21/3213
Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.
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公开(公告)号:US08847228B2
公开(公告)日:2014-09-30
申请号:US13691307
申请日:2012-11-30
Applicant: Samsung Display Co., Ltd.
Inventor: Kyung Seop Kim , Byeong-Beom Kim , Joon Yong Park , Chang Oh Jeong , Hong Long Ning , Dong Min Lee
IPC: H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L29/49 , H01L29/45 , H01L29/786
CPC classification number: H01L29/78693 , H01L29/458 , H01L29/4908 , H01L29/7869
Abstract: A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).
Abstract translation: 薄膜晶体管阵列面板包括:设置在绝缘基板上的半导体层; 与半导体层重叠的栅电极; 与该半导体层重叠的源电极和漏电极; 设置在所述源电极和所述半导体层之间的第一阻挡层; 以及设置在所述漏电极和所述半导体层之间的第二阻挡层,其中所述第一阻挡层和所述第二阻挡层包括镍 - 铬(NiCr)。
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14.
公开(公告)号:US12193296B2
公开(公告)日:2025-01-07
申请号:US17717554
申请日:2022-04-11
Applicant: Samsung Display Co., Ltd.
Inventor: Hyun Eok Shin , Do Keun Song , Dong Min Lee , Joon Yong Park , Hyun Ah Sung , Yun Jong Yeo , Dae Won Choi
IPC: H10K59/131
Abstract: A conductive pattern is disclosed that includes a conductive layer including aluminum, a first capping layer disposed on the conductive layer and including titanium, and a second capping layer disposed on the first capping layer and including titanium nitride. A mixed region in which the aluminum and the titanium are mixed with each other is disposed in at least portions of the conductive layer and the first capping layer.
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15.
公开(公告)号:US11889730B2
公开(公告)日:2024-01-30
申请号:US17732797
申请日:2022-04-29
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Kyeong Su Ko , Joon Yong Park , Gyung Min Baek , Hyun Min Cho , Dae Won Choi
IPC: H10K59/13 , H10K59/131 , H10K50/81 , H10K50/82 , H10K71/00 , H10K59/12 , H10K102/10
CPC classification number: H10K59/131 , H10K50/81 , H10K50/82 , H10K71/00 , H10K59/1201 , H10K2102/103
Abstract: An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.
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公开(公告)号:US11199935B2
公开(公告)日:2021-12-14
申请号:US16863394
申请日:2020-04-30
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Gyung Min Baek , Hyun Eok Shin , Ju Hyun Lee , Joon Yong Park , Sang Won Shin
IPC: G06F3/02 , G06F3/041 , G06F3/044 , G06F3/0488 , H01L27/32 , H01L51/52 , H03K17/96 , H04M1/23 , H05K3/18
Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.
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公开(公告)号:US10684698B2
公开(公告)日:2020-06-16
申请号:US15813331
申请日:2017-11-15
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Gyung Min Baek , Hyun Eok Shin , Ju Hyun Lee , Joon Yong Park , Sang Won Shin
IPC: G06F3/02 , G06F3/0488 , H03K17/96 , H04M1/23 , H05K3/18 , H01L27/32 , G06F3/044 , H01L51/52 , G06F3/041
Abstract: An input sensing unit includes a first metal pattern layer including a plurality of first conductive lines extending in a first direction. A first insulating layer is disposed on the first metal pattern layer. A second metal pattern layer is positioned above the first insulating layer and includes a plurality of second conductive lines extending in a second direction intersecting the first direction. A second insulating layer is disposed on the second metal pattern layer. A sensing electrode is disposed on the second insulating layer and is electrically connected to the second metal pattern layer through a contact hole defined in the second insulating layer. An anti-reflection pattern layer is disposed on the first and second metal pattern layers to overlap the first and second metal pattern layers along a direction orthogonal to an upper surface of the anti-reflection pattern layer.
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18.
公开(公告)号:US20190324337A1
公开(公告)日:2019-10-24
申请号:US16460829
申请日:2019-07-02
Applicant: Samsung Display Co., Ltd.
Inventor: Chan Woo Yang , Hong Sick Park , Hyun Eok Shin , Joon Yong Park , Gyung Min Baek , Sang Won Shin , Ju Hyun Lee
IPC: G02F1/1362 , H01L21/3213 , H01L29/49 , G02F1/1368 , G02F1/1335 , H01L27/12 , H01L21/285
Abstract: A wire substrate, a display device including a wire substrate, and a method of fabricating a wire substrate are disclosed. The display device comprises: a first base; and a first wiring layer disposed on the first base and comprising a conductive metal layer and a metal oxide layer stacked on one another, wherein the metal oxide layer comprises MoxTayOz, wherein a content of tantalum is equal to or less than 2.0 at % (atomic percent) based on a total number of metal atoms.
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公开(公告)号:US20140151683A1
公开(公告)日:2014-06-05
申请号:US13873426
申请日:2013-04-30
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Sang Ho Park , Su-Hyoung Kang , Yoon Ho Khang , Dong Jo Kim , Joon Yong Park , Sang Won Shin , Dong Hwan Shim
IPC: H01L29/786
CPC classification number: H01L29/7869
Abstract: A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.
Abstract translation: 薄膜晶体管包括氧化物半导体,其中氧化物半导体的氧缺陷含量基于氧化物半导体中包含的全部氧含量不大于约0.15。
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