公开(公告)号：US20210217895A1

公开(公告)日：2021-07-15

申请号：US17115470

申请日：2020-12-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gap Kim ,  Yu-Gwang Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US10444900B2

公开(公告)日：2019-10-15

申请号：US15603395

申请日：2017-05-23

Applicant: Samsung Display Co., Ltd.

Inventor： Gwang Bum Ko ,  Hyun Jae Na ,  Hyoung Wook Jang ,  Ye Ri Jeong ,  Jeong Yun Han

IPC: G06F3/044 ,  G06F3/041

Abstract: A touch sensor includes: a plurality of first sensor electrode columns disposed in a sensing area, the plurality of first sensor electrode columns each including one or more first sensor electrodes; a plurality of second sensor electrode columns alternately disposed with the first sensor electrode columns in the sensing area, the plurality of second sensor electrode columns each including a plurality of second sensor electrodes having a length defined by a longitudinal axis and a width extending in a direction across the length; a plurality of lines connected to the first sensor electrode columns and the second sensor electrode columns; and a pad unit including a plurality of pads connected to the lines, wherein at least some of the second sensor electrodes have a width that varies along the longitudinal axis of its respective second electrodes.

公开(公告)号：US10379684B2

公开(公告)日：2019-08-13

申请号：US15463874

申请日：2017-03-20

Applicant: Samsung Display Co., Ltd.

Inventor： Soon Sung Ahn ,  Hyoung Wook Jang ,  Hyun Jae Na ,  Mu Gyeom Kim

IPC: G06F3/044 ,  G06K9/00

Abstract: A touch screen including a substrate that includes an active area and a non-active area adjacent to the active area, the active area including at least one fingerprint recognition area; touch sensing electrodes including first sensing electrodes arranged in the active area, and at least one second sensing electrode arranged in the fingerprint recognition area, the second sensing electrode configured for sensing a touch and recognizing a fingerprint; and a pad portion provided with a plurality of pads which are electrically connected to respective sensing electrodes, wherein the at least one second sensing electrode includes: a plurality of sub electrodes extending in a direction inclined with respect to an edge portion of the active area; and a plurality of fingerprint recognition lines connecting the sub electrodes to the pad portion, and the fingerprint recognition lines arranged in a same fingerprint recognition area extend in a same direction.

公开(公告)号：US10192992B2

公开(公告)日：2019-01-29

申请号：US15704063

申请日：2017-09-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20170344187A1

公开(公告)日：2017-11-30

申请号：US15603395

申请日：2017-05-23

Applicant: Samsung Display Co., Ltd.

Inventor： Gwang Bum KO ,  Hyun Jae Na ,  Hyoung Wook Jang ,  Ye Ri Jeong ,  Jeong Yun Han

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/0418 ,  G06F3/0416 ,  G06F3/044 ,  G06F2203/04112

Abstract: A touch sensor includes: a plurality of first sensor electrode columns disposed in a sensing area, the plurality of first sensor electrode columns each including one or more first sensor electrodes; a plurality of second sensor electrode columns alternately disposed with the first sensor electrode columns in the sensing area, the plurality of second sensor electrode columns each including a plurality of second sensor electrodes having a length defined by a longitudinal axis and a width extending in a direction across the length; a plurality of lines connected to the first sensor electrode columns and the second sensor electrode columns; and a pad unit including a plurality of pads connected to the lines, wherein at least some of the second sensor electrodes have a width that varies along the longitudinal axis of its respective second electrodes.

公开(公告)号：US09379252B2

公开(公告)日：2016-06-28

申请号：US14666461

申请日：2015-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

公开(公告)号：US09343583B2

公开(公告)日：2016-05-17

申请号：US14678448

申请日：2015-04-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L21/385 ,  H01L21/441 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L21/0262 ,  H01L21/385 ,  H01L21/441 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78696

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract translation: 提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区 区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界 基本对齐。

公开(公告)号：US08987047B2

公开(公告)日：2015-03-24

申请号：US14184361

申请日：2014-02-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L21/00 ,  H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

公开(公告)号：US08853704B2

公开(公告)日：2014-10-07

申请号：US14166183

申请日：2014-01-28

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang

IPC: H01L33/00 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/0262 ,  H01L21/385 ,  H01L21/441 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/78696

Abstract: A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.

Abstract translation: 提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区 区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界 基本对齐。

公开(公告)号：US12032775B2

公开(公告)日：2024-07-09

申请号：US16786617

申请日：2020-02-10

Applicant: Samsung Display Co., Ltd.

Inventor： Hyoung Wook Jang ,  Hyun Jae Na ,  Jin Woo Noh ,  Soon Sung Ahn

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/04164 ,  G06F3/04166 ,  G06F3/0443 ,  G06F2203/04106 ,  G06F2203/04112

Abstract: A display device includes: a plurality of first electrode patterns; a plurality of second electrode patterns; a plurality of first touch signal lines; and a plurality of second touch signal lines. The plurality of first electrode patterns respectively include a plurality of first electrode cells physically separated from each other and arranged in a first direction. The plurality of second electrode patterns include a plurality of second electrode cells physically separated from each other and arranged in a second direction crossing the first direction. The plurality of first touch signal lines are connected to the first electrode cells. The plurality of second touch signal lines are connected to the second electrode cells. The first and second electrode patterns and the first and second touch signal lines are all positioned at the same layer on a substrate. The first touch signal lines are independently connected to each first electrode cell.