公开(公告)号：US10672911B2

公开(公告)日：2020-06-02

申请号：US16451593

申请日：2019-06-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Ho Jung ,  Chaun Gi Choi ,  Hye Young Park ,  Eun Young Lee ,  Joo Hee Jeon ,  Eun Jeong Cho ,  Bo Geon Jeon ,  Yung Bin Chung

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L51/00 ,  H01L29/78 ,  H01L27/32

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

公开(公告)号：US09647237B2

公开(公告)日：2017-05-09

申请号：US15045688

申请日：2016-02-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Ho Jung ,  Chaun Gi Choi ,  Hye Young Park ,  Eun Young Lee ,  Joo Hee Jeon ,  Eun Jeong Cho ,  Bo Geon Jeon ,  Yung Bin Chung

IPC: H01L29/08 ,  H01L51/52 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L29/78603 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/7849 ,  H01L29/78633 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/5256 ,  H01L2251/5338 ,  H01L2251/55 ,  Y02E10/549

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

公开(公告)号：US20230354650A1

公开(公告)日：2023-11-02

申请号：US18220195

申请日：2023-07-10

Applicant: Samsung Display Co., LTD.

Inventor： Yang Ho Jung ,  Jun Gi Kim ,  Jae Hun Lee ,  Bo Geon Jeon

IPC: H10K59/122 ,  H10K50/84 ,  H10K50/86 ,  H10K59/35

CPC classification number: H10K59/122 ,  H10K50/84 ,  H10K50/865 ,  H10K59/353

Abstract: A display device includes a plurality of first electrodes electrically connected to pixel circuits disposed on a substrate; a pixel defining layer defining a plurality of opening regions, each of the opening regions exposing a portion of each of the first electrodes; a plurality of light emitting layers respectively disposed on the first electrodes in the opening regions; a second electrode covering the light emitting layers and the pixel defining layer; an encapsulation layer disposed on the second electrode; and a plurality of light blocking patterns disposed on the encapsulation layer between the opening regions adjacent to each other in a first direction.

公开(公告)号：US10910584B2

公开(公告)日：2021-02-02

申请号：US15976423

申请日：2018-05-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jun Chun ,  Jin-Su Byun ,  Bo Geon Jeon ,  Jun Gi Kim ,  Jeong Min Park ,  Yang-Ho Jung ,  Seon Hwa Choi

IPC: H01L51/00 ,  H01L51/52 ,  H01L33/36 ,  H01L27/32

Abstract: A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.

公开(公告)号：US20190326442A1

公开(公告)日：2019-10-24

申请号：US16451593

申请日：2019-06-25

Applicant: SAMSUNG DISPLAY CO, LTD.

Inventor： Seung Ho JUNG ,  Chaun Gi Choi ,  Hye Young Park ,  Eun Young Lee ,  Joo Hee Jeon ,  Eun Jeong Cho ,  Bo Geon Jeon ,  Yung Bin Chung

IPC: H01L29/786 ,  H01L51/00 ,  H01L27/12 ,  H01L29/78 ,  H01L51/52

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

公开(公告)号：US09859305B2

公开(公告)日：2018-01-02

申请号：US15130654

申请日：2016-04-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yung Bin Chung ,  Bo Geon Jeon ,  Eun Jeong Cho ,  Tae Young Ahn ,  Woo Seok Jeon ,  Sung Hoon Yang

IPC: H01L21/306 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/45 ,  H01L29/423 ,  H01L21/3213 ,  H01L21/465 ,  H01L21/4763

CPC classification number: H01L27/1222 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L21/30604 ,  H01L21/32133 ,  H01L21/465 ,  H01L21/47635 ,  H01L27/1262 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/78606

Abstract: Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.