公开(公告)号：US10910477B2

公开(公告)日：2021-02-02

申请号：US16781081

申请日：2020-02-04

Applicant: Samsung Display Co., LTD.

Inventor： Jongchan Lee ,  Taehoon Yang ,  Woonghee Jeong ,  Kyoungwon Lee ,  Yongsu Lee

IPC: H01L21/44 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

Abstract: A display device includes a first insulation layer on a first gate electrode, an active pattern on the first insulation layer and including an NMOS area and a PMOS area, the PMOS area overlapping the first gate electrode, a second insulation layer on the active pattern. The active pattern includes an NMOS area and a PMOS area, with the PMOS area overlapping the first gate electrode. In addition, a second gate electrode is on the second insulation layer and overlaps the NMOS area. An active-protecting pattern is in the same layer as the second gate electrode and passes through the second insulation layer to contact the PMOS area. A third insulation layer is on the active-protecting pattern and the second gate electrode. A data metal electrode passes through the third insulation layer and contacts the active-protecting pattern.

公开(公告)号：US20210013271A1

公开(公告)日：2021-01-14

申请号：US16901107

申请日：2020-06-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jinyeong Kim ,  Jintaek Kim ,  Mijin PARK ,  Taehoon Yang ,  Woonghee Jeong

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a substrate having a first transmissive area, a second transmissive area, a pixel area between the first transmissive area and the second transmissive area, a first pixel electrode in the pixel area, a first intermediate layer disposed on the first pixel electrode to emit light of a first color and an insulating layer covering edges of the first pixel electrode and defining a first emission area through a first opening exposing a portion of the first pixel electrode. A first partition wall is disposed on the insulating layer between the first emission area and the first transmissive area. A second partition wall is disposed on the insulating layer between the first emission area and the second transmissive area. An opposite electrode is disposed on the first intermediate layer in the pixel area and partially contacts the first partition wall and the second partition wall.

公开(公告)号：US10573698B2

公开(公告)日：2020-02-25

申请号：US14919666

申请日：2015-10-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungwon Lee ,  Yoonho Khang ,  Myounggeun Cha ,  Youngki Shin ,  Woonghee Jeong

IPC: H01L27/12 ,  H01L27/105 ,  H01L27/32 ,  H01L29/786 ,  G09G3/3233 ,  H01L29/66

Abstract: A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

公开(公告)号：US20240349558A1

公开(公告)日：2024-10-17

申请号：US18755675

申请日：2024-06-27

Applicant: Samsung Display Co., Ltd.

Inventor： Juwon Yoon ,  Sanghee Jang ,  Kibum Kim ,  Taehoon Yang ,  Jeonghyun Lee ,  Jongchan Lee ,  Pilsuk Lee ,  Woonghee Jeong

IPC: H10K59/131

CPC classification number: H10K59/131

Abstract: An embodiment of the present disclosure comprises a display device including a substrate including a display area and a peripheral area around the display area, a thin-film transistor on the substrate in the display area and a display element electrically connected to the thin-film transistor, and a first voltage line and a second voltage line located on the substrate in the peripheral area and supplying power for driving the display element, wherein the first voltage line is a common voltage line and entirely surrounds the display area, the second voltage line is a driving voltage line and is arranged to correspond to one side of the display area, and the first voltage line and the second voltage line are on different layers.

公开(公告)号：USRE50143E1

公开(公告)日：2024-09-24

申请号：US18131368

申请日：2023-04-06

Applicant: Samsung Display Co., Ltd.

Inventor： Taehoon Yang ,  Jongchan Lee ,  Woonghee Jeong

IPC: G09G5/10 ,  G09G3/3233 ,  G09G3/3258 ,  H01L27/32 ,  H10K59/121

CPC classification number: G09G3/3258 ,  G09G3/3233 ,  H10K59/1213 ,  H10K59/1216 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2320/0233

Abstract: A pixel, wherein: gates of second and fifth transistors receive a first gate signal; gates of third and fourth transistors respectively receive second and third gate signals; first terminals (FTs) of the second to fifth transistors respectively receive a data voltage, reference voltage, initialization voltage, and first power supply voltage (PSV); a second electrode of a second capacitor receives the first PSV; a second terminal (ST) of a light emitting element (LEE) receives a second PSV; a gate of a first transistor, STs of the second and third transistors, and a first electrode of a first capacitor are connected to a first node; STs of the first and fourth transistors, a FT of the LEE, and second and first electrodes respectively of the first and second capacitors are connected to a second node; and a ST of the fifth transistor is connected to a FT of the first transistor.

公开(公告)号：US11315955B2

公开(公告)日：2022-04-26

申请号：US16286744

申请日：2019-02-27

Applicant: Samsung Display Co., Ltd.

Inventor： Kyoungwon Lee ,  Taehoon Yang ,  Jongchan Lee ,  Woonghee Jeong ,  Yongsu Lee

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/66

Abstract: A thin film transistor substrate, a display device, a method of manufacturing a thin film transistor substrate, and a method of manufacturing a display device, the thin film transistor substrate including a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active pattern, and a first gate electrode arranged to overlap at least a part of the first active pattern; and a second thin film transistor on the substrate, the second thin film transistor including a second active pattern that includes a plurality of protrusions on an upper surface thereof, and a second gate electrode arranged to overlap at least a part of the second active pattern.

公开(公告)号：US20190074304A1

公开(公告)日：2019-03-07

申请号：US16106161

申请日：2018-08-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jongchan Lee ,  Jaeseob Lee ,  Woonghee Jeong ,  Taehoon Yang ,  Yongsu Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/266

Abstract: A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region;and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.

公开(公告)号：US09425251B2

公开(公告)日：2016-08-23

申请号：US14278235

申请日：2014-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Donghan Kang ,  Sunkwang Kim ,  Jaesik Kim ,  Hyeonsik Kim ,  Woonghee Jeong ,  Chaungi Choi

IPC: H01L29/06 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/06 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0684 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

Abstract translation: 公开了薄膜晶体管基板和有机发光二极管（OLED）显示器。 在一个方面，OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板，形成在基板上的源电极，形成在基板上并与源电极间隔开的漏电极，氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域，至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度，在与其第一端相对的第二端处具有第二宽度，并且第一宽度不同于第二宽度。

公开(公告)号：US20150129844A1

公开(公告)日：2015-05-14

申请号：US14278235

申请日：2014-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Donghan Kang ,  Sunkwang Kim ,  Jaesik Kim ,  Hyeonsik Kim ,  Woonghee Jeong ,  Chaungi Choi

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L29/06 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0684 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

Abstract translation: 公开了薄膜晶体管基板和有机发光二极管（OLED）显示器。 在一个方面，OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板，形成在基板上的源电极，形成在基板上并与源电极间隔开的漏电极，氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域，至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度，在与其第一端相对的第二端处具有第二宽度，并且第一宽度不同于第二宽度。

公开(公告)号：US11638383B2

公开(公告)日：2023-04-25

申请号：US16892963

申请日：2020-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Jongchan Lee ,  Kibum Kim ,  Myeonghun Song ,  Jeonghyun Lee ,  Sanghee Jang ,  Woonghee Jeong

IPC: H01L51/56

Abstract: A method of manufacturing a display device includes preparing a substrate, wherein the substrate includes a pixel area and a transmission area, forming insulating layers in the pixel area and in the transmission area, forming a pixel electrode on the insulating layers in the pixel area and forming a pixel-defining layer on the pixel electrode, wherein the pixel-defining layer exposes at least part of the pixel electrode, forming a metal layer on the pixel-defining layer in the pixel area, the at least part of the pixel electrode exposed by the pixel-defining layer in the pixel area, and the insulating layers in the transmission area, removing the metal layer on the insulating layers in the transmission area, and removing the insulating layers in the transmission area.