- Patent Title: Thin film transistor substrate, display device having the same, method of manufacturing thin film transistor substrate, and method of manufacturing display device
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Application No.: US16286744Application Date: 2019-02-27
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Publication No.: US11315955B2Publication Date: 2022-04-26
- Inventor: Kyoungwon Lee , Taehoon Yang , Jongchan Lee , Woonghee Jeong , Yongsu Lee
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: Kile Park Reed & Houtteman PLLC
- Priority: KR10-2018-0027705 20180308
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; H01L29/786 ; H01L29/66

Abstract:
A thin film transistor substrate, a display device, a method of manufacturing a thin film transistor substrate, and a method of manufacturing a display device, the thin film transistor substrate including a substrate; a first thin film transistor on the substrate, the first thin film transistor including a first active pattern, and a first gate electrode arranged to overlap at least a part of the first active pattern; and a second thin film transistor on the substrate, the second thin film transistor including a second active pattern that includes a plurality of protrusions on an upper surface thereof, and a second gate electrode arranged to overlap at least a part of the second active pattern.
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