公开(公告)号：US10978299B2

公开(公告)日：2021-04-13

申请号：US16361914

申请日：2019-03-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-woo Noh ,  Myung-gil Kang ,  Ho-jun Kim ,  Geum-jong Bae ,  Dong-il Bae

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/768 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device according to an example embodiment includes a substrate extending in first and second directions intersecting with each other; nanowires on the substrate and spaced apart from each other in the second direction; gate electrodes extending in the first direction and spaced apart from each other in the second direction, and surrounding the nanowires to be superimposed vertically with the nanowires; external spacers on the substrate and covering sidewalls of the gate electrodes on the nanowires; and an isolation layer between the gate electrodes and extending in the first direction, wherein an upper surface of the isolation layer is flush with upper surfaces of the gate electrodes.

公开(公告)号：US10658244B2

公开(公告)日：2020-05-19

申请号：US16023621

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Dong-won Kim ,  Geum-jong Bae

IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

公开(公告)号：US20200083219A1

公开(公告)日：2020-03-12

申请号：US16358118

申请日：2019-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-gil Kang ,  Beom-jin Park ,  Geum-jong Bae ,  Dong-won Kim ,  Jung-gil Yang

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/66

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

公开(公告)号：US20190088551A1

公开(公告)日：2019-03-21

申请号：US16023621

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Dong-won Kim ,  Geum-jong Bae

IPC: H01L21/8234 ,  H01L21/762

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.