公开(公告)号：US10818765B2

公开(公告)日：2020-10-27

申请号：US16356378

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek Oh ,  Jinwook Jung ,  Hyeokshin Kwon ,  Wontaek Seo ,  Insu Jeon

IPC: H01L29/45 ,  H01L29/16 ,  H01L29/786

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

公开(公告)号：US09899473B2

公开(公告)日：2018-02-20

申请号：US15261229

申请日：2016-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek Oh ,  Hyeokshin Kwon ,  Hwansoo Suh ,  Insu Jeon

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/06 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/775 ,  H01L29/16 ,  H01L21/02 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78 ,  H01L29/861

Abstract: Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming a nanostructure may include forming an insulating layer and forming a nanostructure on the insulating layer. The insulating layer may have a crystal structure. The insulating layer may include an insulating two-dimensional (2D) material. The insulating 2D material may include a hexagonal boron nitride (h-BN). The insulating layer may be formed on a catalyst metal layer. The nanostructure may include at least one of silicon (Si), germanium (Ge), and SiGe. The nanostructure may include at least one nanowire.

公开(公告)号：US09647101B2

公开(公告)日：2017-05-09

申请号：US14878098

申请日：2015-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek Oh

IPC: H01L29/778 ,  H01L29/167 ,  H01L29/267 ,  H01L29/423

CPC classification number: H01L29/778 ,  H01L29/167 ,  H01L29/267 ,  H01L29/4232

Abstract: Provided are silicene material layers and electronic devices having a silicene material layer. The silicene material layer contains silicon atoms in a 2-dimensional honeycomb structure formed as one of a monolayer and a double layer. The silicene material layer includes a doping region doped with at least one material from the group of Group 1, Group 2, Group 16 and Group 17 and at least one of a p-type dopant or an n-type dopant.