Abstract:
A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.
Abstract:
A method of manufacturing a display device may include forming an active pattern on a substrate, the active pattern including a first region, a second region spaced apart from the first region, and a third region disposed between the first region and the second region, forming an insulation layer on the active pattern, defining a first contact hole exposing a portion of the first region, a second contact hole exposing a portion of the second region, and an opening exposing the third region in the insulation layer, forming a conductive pattern filling the first and second contact holes on the insulation layer and removing the third region at a substantially same time, and forming a planarization layer on the conductive pattern.
Abstract:
A display device includes: a substrate; an insulating layer on the substrate and including a first opening; a first panel pad on the substrate and the insulating layer; and an anisotropic conductive film on the first panel pad, and the first panel pad includes a center area located at a center of the first opening, and a first edge area and a second edge area arranged along a lateral side of the insulating layer and located on respective sides of the center area with respect to a first direction, and the anisotropic conductive film overlaps at least one of the center area, the first edge area, and the second edge area of the first panel pad.
Abstract:
An organic light emitting diode display includes a substrate, a semiconductor layer disposed on the substrate, a first insulating layer which covers the semiconductor layer, a first conductive layer disposed on the first insulating layer, a second insulating layer which covers the first conductive layer, a second conductive layer disposed on the second insulating layer, a third insulating layer which covers the second conductive layer, a third conductive layer disposed on the third insulating layer, a first organic layer which covers the third conductive layer, and a fourth conductive layer disposed on the first organic layer, where the fourth conductive layer includes a lower layer, a middle layer, and an upper layer, and the lower layer is disposed between the first organic layer and the middle layer, and includes a transparent conductive oxidization film.
Abstract:
An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.
Abstract:
A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer.
Abstract:
A display device includes a substrate including a display area and a non-display area, a first wiring at the non-display area, a second wiring on a layer that is different from the first wiring at the non-display area, an inorganic insulating layer on the first wiring and the second wiring, a pad on the inorganic insulating layer, and connected to a first end of the first wiring, a contact bridge on the inorganic insulating layer, and connecting the second wiring to a second end of the first wiring, an electrostatic electrode on the inorganic insulating layer between the pad and the contact bridge, a first organic insulating layer covering the contact bridge and the electrostatic electrode, and exposing the pad, a first upper wiring on the first organic insulating layer, and overlapping the contact bridge and the electrostatic electrode, and a second organic insulating layer on the first upper wiring.
Abstract:
A display device includes: a substrate including a display area configured to display images and a non-display area around the display area; a plurality of driving voltage lines in the display area; a plurality of initialization voltage lines in the display area; a plurality of driving voltage transmission lines in the non-display area and configured to transmit a driving voltage to the driving voltage line, and including a first driving voltage transmission line and a second driving voltage transmission line adjacent to each other; an initialization voltage transmission line in the non-display area and configured to transmit an initialization voltage to the initialization voltage line; and a bridge connecting the first driving voltage transmission line and the second driving voltage transmission line and overlapping the initialization voltage transmission line.
Abstract:
A display device includes: a substrate including a display area configured to display images and a non-display area around the display area; a plurality of driving voltage lines in the display area; a plurality of initialization voltage lines in the display area; a plurality of driving voltage transmission lines in the non-display area and configured to transmit a driving voltage to the driving voltage line, and including a first driving voltage transmission line and a second driving voltage transmission line adjacent to each other; an initialization voltage transmission line in the non-display area and configured to transmit an initialization voltage to the initialization voltage line; and a bridge connecting the first driving voltage transmission line and the second driving voltage transmission line and overlapping the initialization voltage transmission line.
Abstract:
An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel electrode and the opposite electrode; a light-scattering portion disposed between the substrate and the organic emission layer, including a plurality of scattering patterns for scattering light emitted from the organic emission layer in insulating layers having different refractive indexes. The display may further include a plurality of light absorption portions disposed between the light-scattering portion and the organic emission layer to correspond to the scattering patterns.