公开(公告)号：US11233955B2

公开(公告)日：2022-01-25

申请号：US17173031

申请日：2021-02-10

Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

Inventor： Shinichi Machida ,  Masashi Murakami ,  Takeyoshi Tokuhara ,  Masaaki Yanagida ,  Sanshiro Shishido ,  Manabu Nakata ,  Masumi Izuchi

IPC: H04N5/374 ,  H04N5/378 ,  H04N5/369 ,  H04N9/04 ,  H01L27/30 ,  H01L27/146 ,  H04N5/33

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

公开(公告)号：US11228725B2

公开(公告)日：2022-01-18

申请号：US16849210

申请日：2020-04-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Tokuhiko Tamaki

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H04N5/369 ,  G01J1/04 ,  G01J1/42 ,  G01J5/08 ,  G01J5/24 ,  H01L51/00 ,  H04N5/33 ,  H04N5/378

Abstract: A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

公开(公告)号：US11081528B2

公开(公告)日：2021-08-03

申请号：US16891367

申请日：2020-06-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Shinichi Machida

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  H01L51/00 ,  H04N5/353 ,  H04N5/374 ,  H01L51/50

Abstract: An imaging device having pixels, each pixel including: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer between the first and second electrodes, and a hole-blocking layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion unit is applied with a voltage between the first electrode and the second electrode. The photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. The range from the first voltage to the second voltage includes 0V, and a difference between the first voltage and the second voltage is 0.5 V or more.

公开(公告)号：US10910467B2

公开(公告)日：2021-02-02

申请号：US16801580

申请日：2020-02-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Satoshi Shibata

IPC: H01L49/02 ,  H01L21/02 ,  H01L27/30 ,  H01L27/146

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

公开(公告)号：US10854678B2

公开(公告)日：2020-12-01

申请号：US16251599

申请日：2019-01-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shunsuke Isono ,  Hidenari Kanehara ,  Sanshiro Shishido ,  Takeyoshi Tokuhara

IPC: H01L27/30 ,  H04N5/374 ,  H04N5/376 ,  H01L27/146

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

公开(公告)号：US10708511B2

公开(公告)日：2020-07-07

申请号：US16124435

申请日：2018-09-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Satoshi Sato ,  Sanshiro Shishido ,  Katsuya Nozawa ,  Takeo Azuma ,  Masaaki Yanagida ,  Takeyoshi Tokuhara ,  Kunio Nobori

IPC: H04N7/18 ,  H04N5/235 ,  G06T7/521 ,  G06T7/246 ,  G01S7/481 ,  G01S17/58 ,  G01S17/89 ,  G01C3/08 ,  H04N5/353 ,  H04N5/3745 ,  H01L27/146

Abstract: A three-dimensional motion obtaining apparatus includes: a light source; a charge amount obtaining circuit that includes pixels and obtains, for each of the pixels, a first charge amount under a first exposure pattern and a second charge amount under a second exposure pattern having an exposure period that at least partially overlaps an exposure period of the first exposure pattern; and a processor that controls a light emission pattern for the light source, the first exposure pattern, and the second exposure pattern. The processor estimates a distance to a subject for each of the pixels on the basis of the light emission pattern and on the basis of the first charge amount and the second charge amount of each of the pixels obtained by the charge amount obtaining circuit, and estimates an optical flow for each of the pixels on the basis of the first exposure pattern, the second exposure pattern, and the first charge amount and the second charge amount obtained by the charge amount obtaining circuit.

公开(公告)号：US10658430B2

公开(公告)日：2020-05-19

申请号：US15939381

申请日：2018-03-29

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Tokuhiko Tamaki

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44 ,  G01J1/04 ,  G01J1/42 ,  G01J5/08 ,  G01J5/24 ,  H01L51/00 ,  H04N5/33 ,  H04N5/378

Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.

公开(公告)号：US12048170B2

公开(公告)日：2024-07-23

申请号：US17205061

申请日：2021-03-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Katsuya Nozawa ,  Takeyoshi Tokuhara ,  Nozomu Matsukawa ,  Sanshiro Shishido

IPC: H10K39/32 ,  H10K19/20 ,  H10K30/30 ,  H10K30/87 ,  H10K85/10 ,  H10K85/20

CPC classification number: H10K39/32 ,  H10K19/20 ,  H10K30/30 ,  H10K30/87 ,  H10K85/113 ,  H10K85/115 ,  H10K85/221

Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

公开(公告)号：US11723225B2

公开(公告)日：2023-08-08

申请号：US18066675

申请日：2022-12-15

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Takeyoshi Tokuhara ,  Sanshiro Shishido ,  Yasuo Miyake ,  Shinichi Machida

IPC: H10K39/32 ,  H01L27/146

CPC classification number: H10K39/32 ,  H01L27/146 ,  H01L27/14669

Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.

公开(公告)号：US11659299B2

公开(公告)日：2023-05-23

申请号：US17549035

申请日：2021-12-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Shinichi Machida ,  Takeyoshi Tokuhara ,  Manabu Nakata ,  Sanshiro Shishido ,  Masaaki Yanagida ,  Masumi Izuchi

IPC: H04N5/378 ,  H04N25/75 ,  H04N25/76 ,  H04N5/374

CPC classification number: H04N25/75 ,  H04N25/76 ,  H10K30/211 ,  H10K39/32 ,  H10K85/211 ,  Y02E10/549

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.