公开(公告)号：US20200083159A1

公开(公告)日：2020-03-12

申请号：US16681007

申请日：2019-11-12

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L23/522 ,  H01L45/00 ,  H01L23/66

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.

公开(公告)号：US20200075672A1

公开(公告)日：2020-03-05

申请号：US16676029

申请日：2019-11-06

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  Nabil EI-Hinnawy ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L27/24 ,  H01L41/18 ,  H01L45/00 ,  H01L41/09 ,  H01L27/20 ,  H01L41/29

Abstract: In fabricating a semiconductor device, a shared material is formed in a resonator region of the semiconductor device and in a phase-change material (PCM) switch region of the semiconductor device. A portion of the shared material is removed to concurrently form a heat spreader comprising the shared material in the PCM switch region and a piezoelectric segment comprising the shared material in the resonator region. The piezoelectric segment in the resonator region and the heat spreader in the PCM switch region are situated at substantially the same level in the semiconductor device. The PCM switch region includes a heating element between the heat spreader and a PCM. The resonator region includes the piezoelectric segment between two electrodes.

公开(公告)号：US20200058868A1

公开(公告)日：2020-02-20

申请号：US16546149

申请日：2019-08-20

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： David J. Howard ,  Gregory P. Slovin ,  Nabil El-Hinnawy

IPC: H01L45/00 ,  H03K17/18 ,  G01R31/327 ,  G01R31/28

Abstract: A rapid testing read out integrated circuit (ROIC) includes phase-change material (PCM) radio frequency (RF) switches residing on an application specific integrated circuit (ASIC). Each PCM RF switch includes a PCM and a heating element transverse to the PCM. The ASIC is configured to provide amorphizing and crystallizing electrical pulses to a selected heating element in a selected PCM RF switch. The ASIC is also configured to generate data for determining and characterizing resistivity change of the selected heating element in the selected PCM RF switch after the ASIC performs a plurality of OFF/ON cycles. In one implementation, a testing method using the ASIC is disclosed.

公开(公告)号：US20200058861A1

公开(公告)日：2020-02-20

申请号：US16271505

申请日：2019-02-08

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Gregory P. Slovin ,  Nabil El-Hinnawy ,  Jefferson E. Rose ,  David J. Howard

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, a capacitive RF terminal, and an ohmic RF terminal. The capacitive RF terminal can include a first trench metal liner situated on a first passive segment of the PCM, and a dielectric liner separating the first trench metal liner from a first trench metal plug. The ohmic RF terminal can include a second trench metal liner situated on a second passive segment of the PCM, and a second trench metal plug ohmically connected to the second trench metal liner. Alternatively, the capacitive RF terminal and the ohmic RF terminal can include lower metal portions and upper metal portions. A MIM capacitor can be formed by the upper metal portion of the capacitive RF terminal, an insulator, and a patterned top plate.

公开(公告)号：US20200058706A1

公开(公告)日：2020-02-20

申请号：US16188782

申请日：2018-11-13

Applicant: Newport Fab, LLC dba Jazz Semiconductor

Inventor： Nabil El-Hinnawy ,  Paul D. Hurwitz ,  Gregory P. Slovin ,  Jefferson E. Rose ,  Roda Kanawati ,  David J. Howard

IPC: H01L27/24 ,  H01L45/00

Abstract: A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF switches. The stacked PCM RF switches can include a high shunt capacitance PCM RF switch having its heating element contacts near its PCM contacts, and a low shunt capacitance PCM RF switch having its heating element contacts far from its PCM contacts. An RF voltage is substantially uniformly distributed between the high shunt capacitance PCM RF switch and the low shunt capacitance PCM RF switch. The stacked PCM RF switches can also include a wide heating element PCM RF switch having a large PCM active segment, and a narrow heating element PCM RF switch having a small PCM active segment. The wide heating element PCM RF switch will have a higher breakdown voltage than the narrow heating element PCM RF switch.

公开(公告)号：US10475993B1

公开(公告)日：2019-11-12

申请号：US16103646

申请日：2018-08-14

Applicant: Newport Fab, LLC

Inventor： Gregory P. Slovin ,  Jefferson E. Rose ,  David J. Howard ,  Michael J. DeBar ,  Nabil El-Hinnawy

IPC: H01L45/00 ,  H01L23/66

Abstract: In fabricating a radio frequency (RF) switch, a heat spreader is provided and a heating element is deposited. A thermally conductive and electrically insulating material is deposited over the heating element. The heating element and the thermally conductive and electrically insulating material are patterned, where the thermally conductive and electrically insulating material is self-aligned with the heating element. A layer of an upper dielectric is deposited. A conformability support layer is optionally deposited over the upper dielectric and the thermally conductive and electrically insulating material. A phase-change material is deposited over the optional conformability support layer and the underlying upper dielectric and the thermally conductive and electrically insulating material.

公开(公告)号：US10454027B1

公开(公告)日：2019-10-22

申请号：US16267719

申请日：2019-02-05

Applicant: Newport Fab, LLC

Inventor： David J. Howard ,  Jefferson E. Rose ,  Gregory P. Slovin ,  Nabil El-Hinnawy

IPC: H01L45/00

Abstract: A radio frequency (RF) switch includes a stressed phase-change material (PCM) and a heating element underlying an active segment of the stressed PCM and extending outward and transverse to the stressed PCM. In one approach, at least one transition layer is situated over the stressed PCM. An encapsulation layer is situated over the at least one transition layer and on first and second sides of the stressed PCM. A stressor layer is situated over the encapsulation layer and the said stressed PCM. Alternatively or additionally, contacts of the RF switch extend into passive segments of a PCM, wherein adhesion layers adhere the passive segments of the PCM to the contacts.

公开(公告)号：US11196401B2

公开(公告)日：2021-12-07

申请号：US16420043

申请日：2019-05-22

Applicant: Newport Fab, LLC

Inventor： Chris Masse ,  David J. Howard ,  Nabil El-Hinnawy ,  Gregory P. Slovin

IPC: H03H7/01 ,  H04B17/21 ,  H04B1/16 ,  H03H7/12

Abstract: In tuning a radio frequency (RF) module including a non-volatile tunable RF filter, a desired frequency and an undesired frequency being provided by an amplifier of the RF module are detected. The non-volatile tunable RF filter is coupled to an output of the amplifier of the RF module. A factory setting of an adjustable capacitor in the non-volatile tunable RF filter is changed by factory-setting a state of a non-volatile RF switch, such that the non-volatile tunable RF filter substantially rejects the undesired frequency and substantially passes the desired frequency. The adjustable capacitor includes the non-volatile RF switch, and the factory setting of the adjustable capacitor corresponds to a factory-set state of the non-volatile RF switch. An end-user is prevented access to the non-volatile RF switch, so as prevent the end-user from modifying the factory-set state of the non-volatile RF switch.

公开(公告)号：US11158794B2

公开(公告)日：2021-10-26

申请号：US16773842

申请日：2020-01-27

Applicant: Newport Fab, LLC

Inventor： Chris Masse ,  David J. Howard ,  Nabil EI-Hinnawy ,  Gregory P. Slovin

IPC: H01L45/00 ,  H03H11/04 ,  H03J5/02 ,  H03H11/12

Abstract: A high-yield, tunable radio frequency (RF) filter includes a plurality of process-dependent capacitors and a plurality of non-volatile RF switches. Each of the plurality of process-dependent capacitors is connected to at least one of the plurality of non-volatile RF switches. An auxiliary capacitor in the plurality of process-dependent capacitors is engaged by an ON-state non-volatile RF switch in the plurality of non-volatile RF switches. A primary capacitor in the plurality of process-dependent capacitors is disengaged by an OFF-state non-volatile RF switch in the plurality of non-volatile RF switches. The auxiliary capacitor substitutes for the primary capacitor.

公开(公告)号：US11057019B2

公开(公告)日：2021-07-06

申请号：US16430164

申请日：2019-06-03

Applicant: Newport Fab, LLC

Inventor： Nabil El-Hinnawy ,  Gregory P. Slovin ,  Chris Masse ,  David J. Howard

IPC: H01L45/00 ,  H01L23/66 ,  H03H11/20 ,  H01Q3/26 ,  H04B1/44 ,  H04L5/14 ,  H01Q21/22

Abstract: A non-volatile adjustable phase shifter is coupled to a transceiver in a wireless communication device. The non-volatile adjustable phase shifter includes a non-volatile radio frequency (RF) switch. In one implementation, the non-volatile RF switch is a phase-change material (PCM) RF switch. In one approach, the non-volatile adjustable phase shifter includes a selectable transmission delay arm and a selectable transmission reference arm. A phase shift caused by the non-volatile adjustable phase shifter is adjusted when the non-volatile RF switch engages with or disengages from the selectable transmission delay arm. In another approach, the non-volatile adjustable phase shifter includes a selectable impedance element. A phase shift caused by the non-volatile adjustable phase shifter is adjusted when the non-volatile RF switch engages with or disengages from the selectable impedance element. In either approach, the phase shift changes a phase of RF signals being transmitted from or received by the transceiver.