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    Integrated circuit including a directional light sensor
    11.
    发明授权
    Integrated circuit including a directional light sensor 有权
    集成电路包括定向光传感器

    公开(公告)号：US09419043B2

    公开(公告)日：2016-08-16

    申请号：US13887144

    申请日：2013-05-03

    Applicant: NXP B.V.

    Inventor： Roel Daamen ,  Nebojsa Nenadovic ,  Erik Jan Lous

    IPC: H01L27/14 ,  H01L31/02 ,  H01L27/146 ,  G01S3/784 ,  H01L31/0216 ,  G01S3/781 ,  H01L27/144

    CPC classification number: H01L27/14643 ,  G01S3/781 ,  G01S3/784 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/02024 ,  H01L31/02164 ,  H01L2224/4847

    Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a directional light sensor. The directional light sensor includes a plurality of photodetectors located on the major surface. The directional light sensor also includes one or more barriers, wherein each barrier is positioned to shade one or more of the photodetectors from light incident upon the integrated circuit from a respective direction. The directional light sensor is operable to determine a direction of light incident upon the integrated circuit by comparing an output signal of at least two of the photodetectors.

    Abstract translation: 一种集成电路及其制造方法。 集成电路包括具有主表面的半导体衬底。 集成电路还包括定向光传感器。 定向光传感器包括位于主表面上的多个光电探测器。 定向光传感器还包括一个或多个障碍物，其中每个屏障被定位成使一个或多个光电探测器从相应的方向遮蔽入射在集成电路上的光。 定向光传感器可操作以通过比较至少两个光电检测器的输出信号来确定入射在集成电路上的光的方向。

    INTEGRATED CIRCUIT AND MANUFACTURING METHOD
    12.
    发明申请
    INTEGRATED CIRCUIT AND MANUFACTURING METHOD 有权
    集成电路和制造方法

    公开(公告)号：US20160043265A1

    公开(公告)日：2016-02-11

    申请号：US14883503

    申请日：2015-10-14

    Applicant: NXP B.V.

    Inventor： Aurelie Humbert ,  Roel Daamen ,  Youri Victorovitch Ponomarev

    IPC: H01L31/18 ,  G01N33/00 ,  G01N21/77

    CPC classification number: H01L31/18 ,  G01N21/766 ,  G01N21/77 ,  G01N21/783 ,  G01N29/022 ,  G01N29/036 ,  G01N33/004 ,  G01N2291/021 ,  G01N2291/0256 ,  G01N2291/02809 ,  G01N2291/0427 ,  H01L31/02 ,  Y02A50/243 ,  Y02A50/244

    Abstract: Disclosed is an integrated circuit comprising a substrate (10); and an optical CO2 sensor comprising: first and second light sensors (12, 12′) on said substrate, said second light sensor being spatially separated from the first light sensor; and a layer portion (14) including an organic compound comprising at least one amine or amidine functional group over the first light sensor; wherein said integrated circuit further comprises a signal processor (16) coupled to the first and second light sensor for determining a difference in the respective outputs of the first and second light sensor. An electronic device comprising such a sensor and a method of manufacturing such an IC are also disclosed.

    Abstract translation: 公开了一种包括基板（10）的集成电路; 和光学CO 2传感器，包括：在所述基板上的第一和第二光传感器（12,12'），所述第二光传感器在空间上与第一光传感器分离; 以及包含在所述第一光传感器上的包含至少一个胺或脒官能团的有机化合物的层部分（14） 其中所述集成电路还包括耦合到所述第一和第二光传感器的信号处理器（16），用于确定所述第一和第二光传感器的相应输出的差。 还公开了一种包括这种传感器的电子设备和制造这种IC的方法。

    Gas Sensor
    13.
    发明申请
    Gas Sensor 有权
    气体传感器

    公开(公告)号：US20150285750A1

    公开(公告)日：2015-10-08

    申请号：US14248102

    申请日：2014-04-08

    Applicant: NXP B.V.

    Inventor： Aurelie Humbert ,  Dimitri Soccol ,  Roel Daamen ,  Annelies Falepin

    IPC: G01N25/18 ,  G01N33/00 ,  G01N27/04

    CPC classification number: G01N25/18 ,  G01N25/36 ,  G01N27/18 ,  G01N27/185 ,  G01N33/004

    Abstract: In one example, a thermal conductivity gas sensor is disclosed. The sensor includes a sensing element and an amplification material coupled to the sensing element. The amplification material has a target gas dependent thermal diffusivity. The sensing element measures the thermal diffusivity of the amplification material to determine a target gas concentration.

    Abstract translation: 在一个示例中，公开了导热气体传感器。 传感器包括耦合到感测元件的感测元件和放大材料。 扩散材料具有目标气体相关的热扩散率。 感测元件测量扩散材料的热扩散率以确定目标气体浓度。

    Integrated circuit and manufacturing method
    15.
    发明授权
    Integrated circuit and manufacturing method 有权
    集成电路及制造方法

    公开(公告)号：US09052267B2

    公开(公告)日：2015-06-09

    申请号：US14513352

    申请日：2014-10-14

    Applicant: NXP B.V.

    Inventor： Youri Victorovitch Ponomarev ,  David Tio Castro ,  Roel Daamen

    IPC: H01L21/00 ,  G01N27/04 ,  G01N27/12 ,  G01N27/22 ,  H01L51/00 ,  H01L51/42 ,  G01N33/00 ,  H01L27/144 ,  H01L31/18

    CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

    Abstract: Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46′) in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46″) over the first area. A method of manufacturing such an IC is also disclosed.

    Abstract translation: 公开了一种集成电路，其包括：包括至少一个光传感器（12）的基板（10） 在所述衬底上的互连结构（20）; 所述互连结构上的至少一个钝化层（30），所述钝化层包括所述至少一个光传感器上的第一区域; 以及气体传感器，例如至少部分地在所述至少一个钝化层的另一区域上的湿度传感器（50），其中所述气体传感器包括在第一电极（42）和第二电极 第二电极（44），气敏层还包括在第一区域上的部分（46“）。 还公开了制造这种IC的方法。

    Integrated circuit and manufacturing method
    16.
    发明授权
    Integrated circuit and manufacturing method 有权
    集成电路及制造方法

    公开(公告)号：US08896073B2

    公开(公告)日：2014-11-25

    申请号：US13745918

    申请日：2013-01-21

    Applicant: NXP B.V.

    Inventor： Youri Victorovitch Ponomarev ,  David Tio Castro ,  Roel Daamen

    IPC: H01L27/14 ,  G01N27/22 ,  H01L51/42 ,  H01L51/00 ,  G01N27/12

    CPC classification number: G01N27/048 ,  G01N27/121 ,  G01N27/223 ,  G01N33/0036 ,  H01L27/144 ,  H01L31/18 ,  H01L51/0034 ,  H01L51/42

    Abstract: Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed.

    Abstract translation: 公开了一种集成电路，其包括：基板，包括至少一个光传感器; 在衬底上的互连结构; 所述互连结构上的至少一个钝化层，所述钝化层包括所述至少一个光传感器上的第一区域; 以及气体传感器，例如至少部分地在所述至少一个钝化层的另一区域上的湿度传感器，其中所述气体传感器包括位于第一电极和第二电极之间的气体敏感层，所述气体敏感层还包括 在第一区域的部分。 还公开了制造这种IC的方法。

    Integrated circuits separated by through-wafer trench isolation
    17.
    发明授权
    Integrated circuits separated by through-wafer trench isolation 有权
    通过晶圆沟槽隔离分离的集成电路

    公开(公告)号：US08853816B2

    公开(公告)日：2014-10-07

    申请号：US13705627

    申请日：2012-12-05

    Applicant: NXP B.V.

    Inventor： Peter Gerard Steeneken ,  Roel Daamen ,  Gerard Koops ,  Jan Sonsky ,  Evelyne Gridelet ,  Coenraad Cornelis Tak

    IPC: H01L21/70 ,  H01L21/8238 ,  H01L21/762

    CPC classification number: H01L21/76232 ,  H01L21/76224 ,  H01L21/823878

    Abstract: An isolated semiconductor circuit comprising: a first sub-circuit and a second sub-circuit; a backend that includes an electrically isolating connector between the first and second sub-circuits; a lateral isolating trench between the semiconductor portions of the first and second sub-circuits, wherein the lateral isolating trench extends along the width of the semiconductor portions of the first and second sub-circuits, wherein one end of the isolating trench is adjacent the backend, and wherein the isolating trench is filled with an electrically isolating material.

    Abstract translation: 一种隔离半导体电路，包括：第一子电路和第二子电路; 后端，其包括在所述第一和第二子电路之间的电隔离连接器; 在所述第一和第二子电路的半导体部分之间的横向隔离沟槽，其中所述横向隔离沟槽沿着所述第一和第二子电路的半导体部分的宽度延伸，其中所述隔离沟槽的一端与所述后端 ，并且其中所述隔离沟槽填充有电绝缘材料。

    INTEGRATED CIRCUIT COMPRISING A THERMAL CONDUCTIVITY BASED GAS SENSOR
    18.
    发明申请
    INTEGRATED CIRCUIT COMPRISING A THERMAL CONDUCTIVITY BASED GAS SENSOR 有权
    包含基于导热系数的气体传感器的集成电路

    公开(公告)号：US20140102172A1

    公开(公告)日：2014-04-17

    申请号：US14047137

    申请日：2013-10-07

    Applicant: NXP B.V.

    Inventor： Roel Daamen ,  Aurelie Humbert ,  Pascal Bancken

    IPC: G01N27/18 ,  G01N25/56

    CPC classification number: G01N27/18 ,  G01N25/56 ,  G01N27/223 ,  G01N33/0032

    Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate. The integrated circuit also includes a relative humidity sensor on the substrate. The relative humidity sensor includes a first sensor electrode, a second sensor electrode, and a humidity sensitive layer covering the first and second electrodes. The integrated circuit further includes a thermal conductivity based gas sensor on the substrate. The thermal conductivity based gas sensor has an electrically resistive sensor element located above the humidity sensitive layer.

    Abstract translation: 一种集成电路及其制造方法。 集成电路包括半导体衬底。 集成电路还包括在基板上的相对湿度传感器。 相对湿度传感器包括第一传感器电极，第二传感器电极和覆盖第一和第二电极的湿度敏感层。 集成电路还包括在基板上的基于热导率的气体传感器。 基于导热系数的气体传感器具有位于湿度敏感层上方的电阻传感器元件。

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