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公开(公告)号：US11105867B2
公开(公告)日：2021-08-31
申请号：US16074135
申请日：2017-01-31
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Thomas Scheike , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono , Kouichiro Inomata
Abstract: The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAl2O4 type insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a Co2FeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an Mg1−xAlx (0
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公开(公告)号：US11004465B2
公开(公告)日：2021-05-11
申请号：US16311367
申请日：2017-06-23
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinya Kasai , Yukiko Takahashi , Pohan Cheng , Ikhtiar , Seiji Mitani , Tadakatsu Ohkubo , Kazuhiro Hono
Abstract: An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.
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公开(公告)号：US10832719B2
公开(公告)日：2020-11-10
申请号：US16214375
申请日：2018-12-10
Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Hiroaki Sukegawa , Zhenchao Wen , Seiji Mitani , Koichiro Inomata , Takao Furubayashi , Jason Paul Hadorn , Tadakatsu Ohkubo , Kazuhiro Hono , Jungwoo Koo
IPC: G11B5/65 , G11B5/73 , G11B5/84 , H01F10/32 , G11B5/39 , G11C11/16 , G11B5/851 , H01F10/12 , G11B5/66 , H01F10/30
Abstract: Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42° to 54° with respect to the direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.
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公开(公告)号：US10665776B2
公开(公告)日：2020-05-26
申请号：US16275947
申请日：2019-02-14
Applicant: TDK CORPORATION , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Shinto Ichikawa , Katsuyuki Nakada , Seiji Mitani , Hiroaki Sukegawa , Kazuhiro Hono , Tadakatsu Ohkubo
Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x
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