公开(公告)号：US20160268202A1

公开(公告)日：2016-09-15

申请号：US15164889

申请日：2016-05-26

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/088

CPC classification number: H01L23/5286 ,  H01L23/485 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/05085 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: A semiconductor device may include a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device and is directly contacting the first metal layer. The first specific metal layer routing is formed on a second metal layer of the semiconductor device and under the metal pad. In addition, the semiconductor device may include at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, where the aforementioned at least one via plug is formed directly under the metal pad.

Abstract translation: 半导体器件可以包括金属焊盘和第一特定金属层布线。 金属焊盘位于半导体器件的第一金属层上，并与第一金属层直接接触。 第一特定金属层布线形成在半导体器件的第二金属层上并在金属焊盘下方。 此外，半导体器件可以包括至少一个通孔插头，用于将第一特定金属层布线连接到第一金属层中的至少一个金属区域，其中上述至少一个通孔插塞直接形成在金属垫下方。

公开(公告)号：US10545530B2

公开(公告)日：2020-01-28

申请号：US15593314

申请日：2017-05-11

Applicant: MEDIATEK INC.

Inventor： You-Ming Tsao ,  Chun-Liang Chen ,  Chen-Chia Lee

IPC: G06F13/16 ,  G06F1/08 ,  G06F1/324 ,  G06F1/3296

Abstract: An electronic device includes a memory controller and a processor. The memory controller controls access of a memory device. The processor performs a calibration operation to find a first setting range of a memory controller parameter under a first clock frequency of the memory device, to find a second setting range of the memory controller parameter under a second clock frequency of the memory device, and to determine a calibrated setting of the memory controller parameter according to an overlapped range of the first setting range and the second setting range.

公开(公告)号：US20170248987A1

公开(公告)日：2017-08-31

申请号：US15593314

申请日：2017-05-11

Applicant: MEDIATEK INC.

Inventor： You-Ming Tsao ,  Chun-Liang Chen ,  Chen-Chia Lee

IPC: G06F1/08 ,  G06F1/32 ,  G06F13/16

CPC classification number: G06F1/08 ,  G06F1/324 ,  G06F1/3296 ,  G06F13/1689 ,  Y02D10/126

Abstract: An electronic device includes a memory controller and a processor. The memory controller controls access of a memory device. The processor performs a calibration operation to find a first setting range of a memory controller parameter under a first clock frequency of the memory device, to find a second setting range of the memory controller parameter under a second clock frequency of the memory device, and to determine a calibrated setting of the memory controller parameter according to an overlapped range of the first setting range and the second setting range.

公开(公告)号：US09847294B2

公开(公告)日：2017-12-19

申请号：US15432906

申请日：2017-02-14

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/52 ,  H01L23/528 ,  H01L23/00 ,  H01L23/522 ,  H01L27/088

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed in a second metal layer and directly under the metal pad, wherein an oxide layer is positioned between the first metal layer and the second metal layer.

公开(公告)号：US20170069574A1

公开(公告)日：2017-03-09

申请号：US15356680

申请日：2016-11-21

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen

IPC: H01L23/528 ,  H01L23/485 ,  H01L23/522

CPC classification number: H01L23/5286 ,  H01L23/485 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/05085 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: A semiconductor device may include a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device and is directly contacting the first metal layer. The first specific metal layer routing is formed on a second metal layer of the semiconductor device and under the metal pad. In addition, the semiconductor device may include at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, where the aforementioned at least one via plug is formed directly under the metal pad.

Abstract translation: 半导体器件可以包括金属焊盘和第一特定金属层布线。 金属焊盘位于半导体器件的第一金属层上，并与第一金属层直接接触。 第一特定金属层布线形成在半导体器件的第二金属层上并在金属焊盘下方。 此外，半导体器件可以包括至少一个通孔插头，用于将第一特定金属层布线连接到第一金属层中的至少一个金属区域，其中上述至少一个通孔插塞直接形成在金属垫下方。

公开(公告)号：US20140217601A1

公开(公告)日：2014-08-07

申请号：US14165594

申请日：2014-01-28

Applicant: MEDIATEK INC.

Inventor： Chun-Liang Chen ,  Tien-Chang Chang ,  Chien-Chih Lin

IPC: H01L23/48

CPC classification number: H01L23/5286 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L24/05 ,  H01L27/088 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05085 ,  H01L2224/05096 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2924/00014

Abstract: The present invention provides a semiconductor device. The semiconductor device comprises: a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device. The first specific metal layer routing is formed on a second metal layer of the semiconductor device, and directly under the metal pad.

Abstract translation: 本发明提供一种半导体器件。 半导体器件包括：金属焊盘和第一特定金属层布线。 金属焊盘位于半导体器件的第一金属层上。 第一特定金属层布线形成在半导体器件的第二金属层上，并且直接在金属焊盘下方。