LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND VEHICLE

    公开(公告)号:US20210293937A1

    公开(公告)日:2021-09-23

    申请号:US17015325

    申请日:2020-09-09

    Abstract: According to one embodiment, a light detector includes a first semiconductor region of a first conductivity type, a first element, a second element, an insulating body, a first interconnect, and a second interconnect. The second semiconductor region of the first element is provided on the first semiconductor region. The third semiconductor region of the first element is provided on the second semiconductor region. The fourth semiconductor region of the second element is provided on the first semiconductor region, and has an impurity concentration of a first conductivity type less than in the second semiconductor region. The fifth semiconductor region of the second element is provided on the fourth semiconductor region. The insulating body is provided between the first element and the second element. The first interconnect is electrically connected to the third semiconductor region. The second interconnect is electrically connected to the fifth semiconductor region.

    IMAGING LENS AND SOLID STATE IMAGING DEVICE
    14.
    发明申请
    IMAGING LENS AND SOLID STATE IMAGING DEVICE 有权
    成像镜头和固态成像装置

    公开(公告)号:US20150077618A1

    公开(公告)日:2015-03-19

    申请号:US14460780

    申请日:2014-08-15

    Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, and first, second, and third lenses. The first lens is provided between the aperture stop and the microlens array, and has a positive refractive power. The second lens is provided between the first lens and the microlens array, and has a negative refractive power. The third lens is provided between the second lens and the microlens array, and has a positive refractive power.

    Abstract translation: 根据一个实施例,成像透镜包括第一光学系统和微透镜阵列。 第一光学系统包括光轴。 微透镜阵列设置在第一光学系统和成像元件之间。 微透镜阵列包括设置在第一平面内的微透镜单元。 成像元件包括像素组。 每个像素组包括像素。 当投影到第一平面上时,微透镜单元分别与像素组重叠。 第一光学系统包括孔径光阑和第一,第二和第三透镜。 第一透镜设置在孔径光阑和微透镜阵列之间,并且具有正的屈光力。 第二透镜设置在第一透镜和微透镜阵列之间,并具有负折光力。 第三透镜设置在第二透镜和微透镜阵列之间,并且具有正的折射光焦度。

    LIGHT DETECTOR, LIGHT DETECTION SYSTEM, LIDAR DEVICE, AND MOBILE BODY

    公开(公告)号:US20220352219A1

    公开(公告)日:2022-11-03

    申请号:US17680184

    申请日:2022-02-24

    Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.

    PHOTODETECTOR, OPTICAL DETECTION SYSTEM, LIDAR DEVICE, AND MOVABLE BODY

    公开(公告)号:US20210296381A1

    公开(公告)日:2021-09-23

    申请号:US17005498

    申请日:2020-08-28

    Abstract: A photodetector includes a first semiconductor layer including a light detection region and a peripheral region on a first surface on which light is incident. The light detection region is a region in which light detecting units are arrayed. The peripheral region is a semiconductor region disposed on the periphery of the light detection region and not including a light detecting unit. A density of a lattice defect or a concentration of impurity in a first layer region that is at least a part in a thickness direction of the peripheral region is higher than a density of a lattice defect or a concentration of impurity in a second layer region adjacent to the first layer region in a direction intersecting the thickness direction in the light detection region.

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