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公开(公告)号:US20220352219A1
公开(公告)日:2022-11-03
申请号:US17680184
申请日:2022-02-24
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Mariko SHIMIZU , Ikuo FUJIWARA , Keita SASAKI , Kazuaki OKAMOTO , Honam KWON , Kazuhiro SUZUKI
IPC: H01L27/146 , G01S7/481
Abstract: According to one embodiment, a light detector includes a plurality of elements, a plurality of separation parts, a fourth semiconductor region, a fifth semiconductor region, a first interconnect, a first quenching part, and a second interconnect. The elements are located in a cell region and arranged. Each of the elements includes first, second, and third semiconductor regions. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on the second semiconductor region. The separation parts are located respectively around the elements. The fourth semiconductor region is located around each of the separation parts. The fifth semiconductor region is located on the fourth semiconductor region. The first interconnect is electrically connected to the third semiconductor regions. The first quenching part is electrically connected to the first interconnect. The second interconnect is electrically connected to the fifth semiconductor region.
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公开(公告)号:US20210296381A1
公开(公告)日:2021-09-23
申请号:US17005498
申请日:2020-08-28
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Masaki ATSUTA , Kazuhiro SUZUKI , Ikuo FUJIWARA , Honam KWON , Yuki NOBUSA
IPC: H01L27/146 , G01S7/481
Abstract: A photodetector includes a first semiconductor layer including a light detection region and a peripheral region on a first surface on which light is incident. The light detection region is a region in which light detecting units are arrayed. The peripheral region is a semiconductor region disposed on the periphery of the light detection region and not including a light detecting unit. A density of a lattice defect or a concentration of impurity in a first layer region that is at least a part in a thickness direction of the peripheral region is higher than a density of a lattice defect or a concentration of impurity in a second layer region adjacent to the first layer region in a direction intersecting the thickness direction in the light detection region.
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公开(公告)号:US20200256778A1
公开(公告)日:2020-08-13
申请号:US16557056
申请日:2019-08-30
Applicant: Kabushiki Kaisha Toshiba
Inventor: Honam KWON , Ikuo FUJIWARA , Kazuhiro SUZUKI , Keita SASAKI , Yuki NOBUSA , Yasushi SHINJO
IPC: G01N15/02 , G01N21/64 , H01L31/107 , C07F3/06
Abstract: The molecule detecting apparatus of an embodiment includes a light source 31, a fluorescent layer 42 emitting different fluorescence depending on the kind of a target molecule 60 captured when being irradiated with light from the light source 31, a photodetector 32 configured to detect fluorescence, and the photodetector 32 is an array of avalanche photodiodes operating in Geiger mode.
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公开(公告)号:US20240313100A1
公开(公告)日:2024-09-19
申请号:US18361647
申请日:2023-07-28
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Daimotsu KATO , Yosuke KAJIWARA , Hiroshi ONO , Aya SHINDOME , Ikuo FUJIWARA , Masahiko KURAGUCHI , Tatsuo SHIMIZU
IPC: H01L29/778 , H01L29/20 , H01L29/36
CPC classification number: H01L29/7786 , H01L29/2003 , H01L29/36
Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0≤x1
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公开(公告)号:US20230299103A1
公开(公告)日:2023-09-21
申请号:US17822417
申请日:2022-08-25
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Ryomo KANEKO , Mariko SHIMIZU , Keita SASAKI , Honam KWON , Ikuo FUJIWARA , Kazuhiro SUZUKI
IPC: H01L27/146 , G01S17/89
CPC classification number: H01L27/14623 , H01L27/1463 , G01S17/89 , H01L27/14649 , H01L27/14627
Abstract: A light detector according to one embodiment, includes an element region, a light concentrator, a structure part and a light-shielding part. The element region includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The light concentrator is separated from the element region in a first direction. The light concentrator is configured to concentrate light incident on the light concentrator. The structure part is arranged with the element region in a direction crossing the first direction. The structure part has a different refractive index from the element region. The light-shielding part is located between the element region and the light concentrator. The light-shielding part includes an opening. At least a portion of the light incident on the light concentrator is able to be incident on the element region by passing through the opening.
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公开(公告)号:US20210293967A1
公开(公告)日:2021-09-23
申请号:US17015774
申请日:2020-09-09
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Ikuo FUJIWARA , Honam KWON , Keita SASAKI , Kazuhiro SUZUKI , Masaki ATSUTA , Mariko SHIMIZU , Kazuaki OKAMOTO
IPC: G01S17/931 , H01L31/107 , G01S17/89 , G01S7/481
Abstract: According to one embodiment, a light detector includes an element, and a structure body. The element includes a first semiconductor region, a second semiconductor region, and a third semiconductor region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The structure body is provided around the element. The structure body includes first and second insulating portions and a metal-including portion. The metal-including portion is provided above the first insulating portion. A position in the first direction of a portion of the metal-including portion is same as a position in the first direction of the third semiconductor region. The second insulating portion is positioned between the metal-including portion and the element in the first plane. A thickness of the first insulating portion is greater than a thickness of the second insulating portion in the first plane.
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公开(公告)号:US20180266881A1
公开(公告)日:2018-09-20
申请号:US15703145
申请日:2017-09-13
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Ikuo FUJIWARA , Yuki Nobusa , Honam Kwon , Kazuhiro Suzuki
IPC: G01J1/44 , G01V8/10 , H01L31/107 , H01L27/144
CPC classification number: G01J1/44 , G01J2001/444 , G01J2001/4466 , G01V8/10 , H01L27/1443 , H01L31/02019 , H01L31/107
Abstract: An photodetection device according to an embodiment includes: a pixel including at least one cell, the at least one cell including an avalanche photodiode and a resistor connected in series to the avalanche photodiode; a voltage source configured to apply voltage to the cell of the pixel; and a temperature detecting circuit including a temperature detecting element configured to detect a temperature of the pixel, wherein the temperature detecting element includes: a photodiode having the same structure as the avalanche photodiode; and a light shielding structure disposed on an upper surface of the photodiode.
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公开(公告)号:US20140285671A1
公开(公告)日:2014-09-25
申请号:US14204361
申请日:2014-03-11
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Koichi ISHII , Hideyuki FUNAKI , Ikuo FUJIWARA , Hiroto HONDA
IPC: H04N5/33
CPC classification number: H04N5/33 , H01L27/14618 , H01L27/14623 , H01L27/14625 , H01L27/14649 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: An infrared imaging module according to an embodiment includes: an infrared imaging element including a semiconductor substrate having a recessed portion, and a pixel portion formed on the recessed portion, the pixel portion converting infrared rays to electrical signals; and a lid including a lens portion facing the pixel portion, and a flat plate portion surrounding the lens portion, the flat plate portion being bonded to the semiconductor substrate.
Abstract translation: 根据实施例的红外成像模块包括:红外成像元件,包括具有凹部的半导体基板和形成在凹部上的像素部分,像素部分将红外线转换为电信号; 以及包括与像素部分相对的透镜部分的盖子和围绕透镜部分的平板部分,平板部分粘合到半导体基板。
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公开(公告)号:US20210293937A1
公开(公告)日:2021-09-23
申请号:US17015325
申请日:2020-09-09
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor: Ikuo FUJIWARA , Honam KWON , Keita SASAKI , Kazuhiro SUZUKI , Masaki ATSUTA , Mariko SHIMIZU , Kazuaki OKAMOTO
IPC: G01S7/4863 , G01S17/931 , H01L31/02 , H01L25/04
Abstract: According to one embodiment, a light detector includes a first semiconductor region of a first conductivity type, a first element, a second element, an insulating body, a first interconnect, and a second interconnect. The second semiconductor region of the first element is provided on the first semiconductor region. The third semiconductor region of the first element is provided on the second semiconductor region. The fourth semiconductor region of the second element is provided on the first semiconductor region, and has an impurity concentration of a first conductivity type less than in the second semiconductor region. The fifth semiconductor region of the second element is provided on the fourth semiconductor region. The insulating body is provided between the first element and the second element. The first interconnect is electrically connected to the third semiconductor region. The second interconnect is electrically connected to the fifth semiconductor region.
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公开(公告)号:US20150270314A1
公开(公告)日:2015-09-24
申请号:US14555889
申请日:2014-11-28
Applicant: Kabushiki Kaisha Toshiba
Inventor: Takashi MIYAZAKI , Ikuo FUJIWARA , Hideyuki FUNAKI
IPC: H01L27/30 , H01L31/0376 , H01L27/146
CPC classification number: H01L27/307 , H01L27/14621 , H01L27/14629 , H01L27/14632 , H01L27/14647 , H01L31/03762
Abstract: According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter.
Abstract translation: 根据一个实施例,固态成像装置包括:第一无机光电转换器; 包括光入射的受光面和形成有包括读出电路的电路的电路形成面的半导体基板,所述受光面朝向所述第一无机光电转换元件,所述半导体基板包括 第二无机光电转换器; 以及包括布置在第一无机光电转换器和第二无机光电转换器之间的微结构的第一部分。
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