公开(公告)号：US20160153914A1

公开(公告)日：2016-06-02

申请号：US14944124

申请日：2015-11-17

Applicant: KLA-Tencor Corporation

Inventor： Steven R. Lange

IPC: G01N21/88 ,  G01N21/95

CPC classification number: G01N21/9505 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8845 ,  G01N2021/8848 ,  G03F7/70633 ,  G03F7/7065

Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

Abstract translation: 公开了用于检查半导体样品的方法和装置。 在检查工具上，基于这些不同的感兴趣层具有存在于感兴趣的不同层内或附近的吸收体型材料，为一个或多个半导体样品的不同感兴趣的层选择多个不同的波长范围。 在检查工具上，至少一个入射光束朝向感兴趣的不同层的不同波长范围，并且作为响应，针对感兴趣的不同层中的每一个获得输出信号或图像。 分析来自每个不同感兴趣层的输出信号或图像，以检测这些不同感兴趣的层中的缺陷。

公开(公告)号：US09075027B2

公开(公告)日：2015-07-07

申请号：US14078271

申请日：2013-11-12

Applicant: KLA-Tencor Corporation

Inventor： Steven R. Lange

IPC: G01N21/00 ,  G01N21/95 ,  G01N21/88 ,  G01N21/21 ,  G01N21/956

CPC classification number: G01N21/9505 ,  G01N21/21 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8845 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/08

Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface.

Abstract translation: 公开了用于检查垂直存储器堆叠的方法和装置。 在检查工具上，使用具有第一波长范围的入射光来检测垂直存储堆的表面上的缺陷。 在检查工具上，具有第二波长范围的入射光用于检测垂直存储器堆叠的表面和深度上的缺陷。 将使用第一和第二波长范围检测到的缺陷进行比较，以仅在垂直存储器堆叠的整个深度处检测缺陷，排除表面上的缺陷。

公开(公告)号：US08912495B2

公开(公告)日：2014-12-16

申请号：US13742315

申请日：2013-01-15

Applicant: KLA-Tencor Corporation

Inventor： Steven R. Lange

IPC: G01J5/00 ,  G01N21/95 ,  G01N21/35

CPC classification number: G01N21/9501 ,  G01N21/3563 ,  G01N21/359 ,  G01N21/55 ,  G01N21/9503 ,  G01N2201/0612 ,  G01N2201/105

Abstract: Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Abstract translation: 提供了三维晶圆的多光谱缺陷检测。 被配置为检测在晶片上形成的一个或多个结构中的缺陷的一个系统包括被配置为将离散光谱带中的光引导到在晶片上形成的一个或多个结构的照明子系统。 至少一些离散的光谱带处于近红外（NIR）波长范围。 每个离散的光谱带具有小于100nm的带通。 该系统还包括检测子系统，该检测子系统被配置为响应于从一个或多个结构反映的离散频谱带中的光产生输出。 另外，该系统包括被配置为使用输出来检测晶片上的一个或多个结构中的缺陷的计算机子系统。

公开(公告)号：US20140139830A1

公开(公告)日：2014-05-22

申请号：US14078271

申请日：2013-11-12

Applicant: KLA-Tencor Corporation

Inventor： Steven R. Lange

IPC: G01N21/95

CPC classification number: G01N21/9505 ,  G01N21/21 ,  G01N21/8806 ,  G01N21/9501 ,  G01N2021/8845 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/08

Abstract: Disclosed are methods and apparatus for inspecting a vertical memory stack. On an inspection tool, incident light having a first wavelength range is used to detect defects on a surface of the vertical memory stack. On the inspection tool, incident light having a second wavelength range is used to detect defects on both the surface and throughout a depth of the vertical memory stack. The defects detected using the first and second wavelength range are compared to detect defects only throughout the depth of the vertical memory stack, excluding defects on the surface.

Abstract translation: 公开了用于检查垂直存储器堆叠的方法和装置。 在检查工具上，使用具有第一波长范围的入射光来检测垂直存储堆的表面上的缺陷。 在检查工具上，具有第二波长范围的入射光用于检测垂直存储器堆叠的表面和深度上的缺陷。 将使用第一和第二波长范围检测到的缺陷进行比较，以仅在垂直存储器堆叠的整个深度处检测缺陷，排除表面上的缺陷。

公开(公告)号：US09599573B2

公开(公告)日：2017-03-21

申请号：US14944124

申请日：2015-11-17

Applicant: KLA-Tencor Corporation

Inventor： Steven R. Lange

IPC: G01N21/00 ,  G01N21/956 ,  G01N21/88 ,  G01N21/95 ,  G03F7/20

CPC classification number: G01N21/9505 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8845 ,  G01N2021/8848 ,  G03F7/70633 ,  G03F7/7065

Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

公开(公告)号：US09558858B2

公开(公告)日：2017-01-31

申请号：US14459155

申请日：2014-08-13

Applicant: KLA-Tencor Corporation

Inventor： David W. Shortt ,  Steven R. Lange ,  Matthew Derstine ,  Kenneth P. Gross ,  Wei Zhao ,  Ilya Bezel ,  Anatoly Shchemelinin

IPC: G21K5/00 ,  H05H1/46

CPC classification number: G21K5/00

Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

Abstract translation: 使用来自激光持续等离子体的VUV光检测样品包括产生包括第一选定波长或波长范围的泵浦照明，其包含适于等离子体产生的气体体积，产生包括第二选定波长的宽度辐射或范围 通过将泵浦照明聚焦到气体体积中，通过将等离子体聚焦在气体体积中，利用从等离子体经由照明路径发射的宽带辐射来照射样品的表面，从样品的表面收集照明， 通过收集路径将收集的照明聚焦到检测器上，以形成样品表面的至少一部分的图像，并用所选择的吹扫气体吹扫照明路径和/或收集路径。

公开(公告)号：US20150069241A1

公开(公告)日：2015-03-12

申请号：US14542580

申请日：2014-11-15

Applicant: KLA-Tencor Corporation

Inventor： Steven R. Lange

IPC: G01N21/95 ,  G01N21/55

CPC classification number: G01N21/9501 ,  G01N21/3563 ,  G01N21/359 ,  G01N21/55 ,  G01N21/9503 ,  G01N2201/0612 ,  G01N2201/105

Abstract: Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Abstract translation: 提供了三维晶圆的多光谱缺陷检测。 被配置为检测在晶片上形成的一个或多个结构中的缺陷的一个系统包括被配置为将离散光谱带中的光引导到在晶片上形成的一个或多个结构的照明子系统。 至少一些离散的光谱带处于近红外（NIR）波长范围。 每个离散的光谱带具有小于100nm的带通。 该系统还包括检测子系统，该检测子系统被配置为响应于从一个或多个结构反映的离散频谱带中的光产生输出。 另外，该系统包括被配置为使用输出来检测晶片上的一个或多个结构中的缺陷的计算机子系统。

公开(公告)号：US20150048741A1

公开(公告)日：2015-02-19

申请号：US14459155

申请日：2014-08-13

Applicant: KLA-Tencor Corporation

Inventor： David W. Shortt ,  Steven R. Lange ,  Matthew Derstine ,  Kenneth P. Gross ,  Wei Zhao ,  Ilya Bezel ,  Anatoly Shchemelinin

IPC: H05H1/46

CPC classification number: G21K5/00

Abstract: The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

Abstract translation: 使用来自激光持续等离子体的VUV光检测样品包括产生包括第一选定波长或波长范围的泵浦照明，其包含适于等离子体产生的气体体积，产生包括第二选定波长的宽度辐射或范围 通过将泵浦照明聚焦到气体体积中，通过将等离子体聚焦在气体体积中，利用从等离子体经由照明路径发射的宽带辐射来照射样品的表面，从样品的表面收集照明， 通过收集路径将收集的照明聚焦到检测器上，以形成样品表面的至少一部分的图像，并用所选择的吹扫气体吹扫照明路径和/或收集路径。