公开(公告)号：US20200159129A1

公开(公告)日：2020-05-21

申请号：US16491963

申请日：2019-08-05

Applicant: KLA-TENCOR CORPORATION

Inventor： Amnon Manassen ,  Yuri Paskover ,  Eran Amit

IPC: G03F7/20 ,  G01B11/27 ,  G01B9/02

Abstract: Scatterometry overlay (SCOL) measurement methods, systems and targets are provided to enable efficient SCOL metrology with in-die targets. Methods comprise generating a signal matrix by: illuminating a SCOL target at multiple values of at least one illumination parameter, and at multiple spot locations on the target, wherein the illumination is at a NA (numerical aperture)>⅓ yielding a spot diameter

公开(公告)号：US10365230B1

公开(公告)日：2019-07-30

申请号：US14661448

申请日：2015-03-18

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Tzahi Grunzweig

IPC: G01N21/956 ,  G01B11/27

Abstract: Metrology methods and modules are provided, which comprise measuring intensity spatial distributions and peaks of spots at the pupil plane of a metrology system that correspond to various diffraction orders scattered from target cells and calculating overlay(s) of the target cell(s) from the measured intensity spatial distributions and peaks. For example, intensity peak or distribution of zeroth diffraction orders from four cells, first diffraction orders from two cells as well as diffraction orders from a single cell may be used to derive an overlay estimation, which may also be compared to standard overlay measurements for different purposes. Intensity spatial distributions may also be used to derive weight function for adjusting measurements or the metrology system.

公开(公告)号：US20190004438A1

公开(公告)日：2019-01-03

申请号：US16102424

申请日：2018-08-13

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

IPC: G03F7/20 ,  H01L21/66

Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

公开(公告)号：US20180188663A1

公开(公告)日：2018-07-05

申请号：US15442111

申请日：2017-02-24

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F9/00 ,  G01B11/27

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US20160266505A1

公开(公告)日：2016-09-15

申请号：US15159009

申请日：2016-05-19

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

IPC: G03F9/00

CPC classification number: G03F7/70633 ,  H01L22/12 ,  H01L27/0207 ,  H01L27/092

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

Abstract translation: 提供了计量方法和目标，将计量过程超越现有技术扩展到多层目标，准周期目标和设备样目标，而不必沿着设备设计的关键方向引入偏移量。 公开了用于导出诸如来自多层目标的覆盖层的度量数据的几个模型，并且提供了相应的目标配置以实现这种测量。 显示基于设备模式的准周期性目标，以改善目标和设备设计之间的相似性，并且使用基于设备模式的模式来填充目标和目标元素的环境，从而提高了流程兼容性。 偏移仅在非关键方向引入，和/或灵敏度被校准，以便与多层测量和准周期性目标测量的解决方案一起使用直接设备光学测量测量。

公开(公告)号：US20220197152A1

公开(公告)日：2022-06-23

申请号：US17689934

申请日：2022-03-08

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F7/20

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US11248905B2

公开(公告)日：2022-02-15

申请号：US15750972

申请日：2017-12-06

Applicant: KLA-TENCOR CORPORATION

Inventor： Eran Amit

IPC: G01B11/27 ,  G03F7/00 ,  G06N99/00 ,  G06N20/00 ,  G06F30/39 ,  G03F7/20 ,  G06F30/398

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Machine learning algorithm application to measurements and/or simulations of metrology measurements of metrology targets are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

公开(公告)号：US20200381312A1

公开(公告)日：2020-12-03

申请号：US16092559

申请日：2018-09-03

Applicant: KLA-TENCOR CORPORATION

Inventor： Yuval Lamhot ,  Eran Amit ,  Einat Peled ,  Noga Sella ,  Wei-Te Cheng ,  Ido Adam

IPC: H01L21/66 ,  H01L21/67 ,  G01N21/31

Abstract: A method of determining overlay (“OVL”) in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including +1 and −1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the +1 and −1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels.

公开(公告)号：US20200158492A1

公开(公告)日：2020-05-21

申请号：US16665759

申请日：2019-10-28

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Barry LOEVSKY ,  Andrew HILL ,  Amnon MANASSEN ,  Nuriel AMIR ,  Vladimir LEVINSKI ,  Roie VOLKOVICH

IPC: G01B11/06 ,  G01B11/27 ,  G01N21/956 ,  G01N21/95 ,  G06F30/398 ,  G06F30/392

Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

公开(公告)号：US10401841B2

公开(公告)日：2019-09-03

申请号：US14867834

申请日：2015-09-28

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie Volkovich ,  Eran Amit ,  Raviv Yohanan

IPC: G05B19/418 ,  G03F7/00 ,  G03F7/20

Abstract: Methods and respective modules are provided, configured to identify registration errors of DSA lines with respect to guiding lines in a produced structure, by comparing a measured signature of the structure with simulated signatures corresponding to simulated structures having varying simulated characteristics, and characterizing the produced structure according to the comparison. The characterization may be carried out using electromagnetic characterization of a geometric model or in a model-free manner by analyzing model-based results. Thus, for the first time, positioning and dimensional errors of DSA lines may be measured.