公开(公告)号：US20230005777A1

公开(公告)日：2023-01-05

申请号：US17941168

申请日：2022-09-09

Applicant: KLA CORPORATION

Inventor： Mark Ghinovker

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/66

Abstract: Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.

公开(公告)号：US11164307B1

公开(公告)日：2021-11-02

申请号：US16935117

申请日：2020-07-21

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Evgeni Gurevich ,  Vladimir Levinski ,  Alexander Svizher

IPC: G06T7/00 ,  G02B27/60 ,  H04N5/225

Abstract: A metrology system and metrology methods are disclosed. The metrology system includes an illumination sub-system, a collection sub-system, a detector, and a controller. The controller is configured to receive an image of an overlay target on a sample, determine an apparent overlay between two working zones along a measurement direction based on the image, and calculate an overlay between the two sample layers by dividing the apparent overlay by a Moiré gain to compensate for Moiré interference.

公开(公告)号：US20200373182A1

公开(公告)日：2020-11-26

申请号：US16609873

申请日：2019-09-30

Applicant: KLA CORPORATION

Inventor： Mark Ghinovker

IPC: H01L21/68 ,  H01L21/66 ,  H01L21/67

Abstract: Metrology targets and methods are provided, which comprise at least two overlapping structures configured to be measurable in a mutually exclusive manner at least at two different corresponding optical conditions. The targets may be single cell targets which are measured at different optical conditions which enable independent measurements of the different layers of the target. Accordingly, the targets may be designed to be very small, and be located in-die for providing accurate metrology measured of complex devices.

公开(公告)号：US20250139814A1

公开(公告)日：2025-05-01

申请号：US18421580

申请日：2024-01-24

Applicant: KLA Corporation

Inventor： Mark Ghinovker

IPC: G06T7/73 ,  G03F1/36 ,  G03F7/00 ,  G06T7/00

Abstract: An overlay metrology system may receive images of an overlay target on a sample, where the overlay target includes Moiré structures in which first-layer features and second-layer features partially overlap, where overlap regions include regions of overlap between the first-layer and second-layer features, where non-overlap regions include regions of non-overlap between the first-layer and second-layer features. The system may further, determine a coarse overlay measurement based at least in part on the one or more non-overlap regions of the one or more images, determine a fine overlay measurement based at least in part on the one or more overlap regions of the one or more images, and generate an output overlay measurement based on the coarse overlay measurement and the fine overlay measurement.

公开(公告)号：US20240210841A9

公开(公告)日：2024-06-27

申请号：US17675912

申请日：2022-02-18

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G03F9/00 ,  G06T7/33

CPC classification number: G03F7/70633 ,  G03F9/7076 ,  G06T7/33 ,  G06T2207/30148

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US11703767B2

公开(公告)日：2023-07-18

申请号：US17487784

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feier ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

公开(公告)号：US20220415725A1

公开(公告)日：2022-12-29

申请号：US17487842

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: H01L21/66 ,  H01L23/544

Abstract: The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

公开(公告)号：US20220171297A1

公开(公告)日：2022-06-02

申请号：US17675912

申请日：2022-02-18

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G06T7/33 ,  G03F9/00

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US11256177B2

公开(公告)日：2022-02-22

申请号：US16743124

申请日：2020-01-15

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/20 ,  G06T7/33 ,  G03F9/00

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US20220020625A1

公开(公告)日：2022-01-20

申请号：US16931078

申请日：2020-07-16

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L21/68 ,  G01B11/27

Abstract: A metrology system and metrology methods are disclosed. The metrology system comprises a set of device features on a first layer of a sample, a first set of target features on a second layer of the sample and overlapping the set of device features, and a second set of target features on the second layer of the sample and overlapping the set of device features. Relative positions of a first set of Moiré fringes and a second set of Moiré fringes indicate overlay error between the first layer of the sample and the second layer of the sample.