公开(公告)号：US12082508B2

公开(公告)日：2024-09-03

申请号：US17296042

申请日：2019-10-24

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Jea Gun Park ,  Jong Ung Baek

IPC分类号： H01L43/08 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC分类号： H10N50/10 ,  H10B61/20 ,  H10N50/80 ,  H10N50/85

摘要： Disclosed is a memory device including a lower electrode, a seed layer, a synthetic antiferromagnetic layer, a magnetic tunnel junction, and an upper electrode laminated on a substrate, wherein the magnetic tunnel junction includes a pinned layer, a tunnel barrier layer, and free layers, wherein the free layers include a first free layer, a spacer layer, a coupling layer, a buffer layer, and a second free layer laminated in sequential order.

公开(公告)号：US11968874B2

公开(公告)日：2024-04-23

申请号：US16963096

申请日：2020-05-26

申请人： IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

发明人： Jea Gun Park ,  Seung Jae Lee ,  Ji Eun Lee ,  Seo Yun Kim

IPC分类号： H10K59/38 ,  G02B5/20 ,  H10K50/115 ,  H10K59/12 ,  H10K102/00

CPC分类号： H10K59/38 ,  G02B5/20 ,  H10K50/115 ,  H10K59/12 ,  H10K2102/331

摘要： An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.

公开(公告)号：US11932794B2

公开(公告)日：2024-03-19

申请号：US17040879

申请日：2020-05-22

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY

发明人： Jea Gun Park ,  Seung Jae Lee ,  Ji Eun Lee ,  Chang Jin Lee

IPC分类号： C09K11/88 ,  B82Y20/00 ,  C09K11/02

CPC分类号： C09K11/881 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/88 ,  C09K11/883

摘要： Disclosed are quantum dots based on a graded multishell structure and a method of manufacturing the same. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core, inter shells surrounding the core, and an outer shell surrounding the inter shells, wherein the concentrations of compounds composing the inter shells are changed stepwise from the core to the outer shell.

公开(公告)号：US11050014B2

公开(公告)日：2021-06-29

申请号：US16094365

申请日：2015-03-18

申请人： Industry-University Cooperation Foundation Hanyang University

发明人： Jea Gun Park ,  Du Yeong Lee ,  Seung Eun Lee ,  Min Su Jeon ,  Jong Ung Baek ,  Tae Hun Shim

IPC分类号： H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

摘要： A memory device contains lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode, which are formed on a substrate in a laminated manner. In the memory device, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400° C. or more.

公开(公告)号：US10886274B2

公开(公告)日：2021-01-05

申请号：US16465392

申请日：2017-11-30

申请人： Industry-University Cooperation Foundation Hanyang University

发明人： Jea Gun Park ,  Seung Hyun Song ,  Min Won Kim

IPC分类号： H01L27/108 ,  H01L27/102 ,  H01L29/87

摘要： The present invention discloses a two-terminal vertical 1T-DRAM and a method of fabricating the same. According to one embodiment of the present invention, the two-terminal vertical 1T-DRAM includes a cathode layer formed of a first-type high-concentration semiconductor layer; a base region including a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer; and an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.

公开(公告)号：US10783945B2

公开(公告)日：2020-09-22

申请号：US16686510

申请日：2019-11-18

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY

发明人： Jea Gun Park ,  Du Yeong Lee ,  Seung Eun Lee

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/04 ,  H01L43/02

摘要： The present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. In addition, the present invention provides a memory device in which a lower electrode, a seed layer, synthetic antiferromagnetic layers, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are formed on a substrate in a laminated manner, wherein the seed layer is formed of a material that allows the synthetic antiferromagnetic layers to grow in the FCC (111) direction.

公开(公告)号：US10580964B2

公开(公告)日：2020-03-03

申请号：US15707491

申请日：2017-09-18

申请人： Industry-University Cooperation Foundation Hanyang University

发明人： Jea Gun Park ,  Du Yeong Lee ,  Song Hwa Hong ,  Jin Young Choi ,  Seung Eun Lee ,  Junli Li

IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  G11C11/15

摘要： The present invention relates to a memory device including a substrate and a lower electrode, buffer layer, seed layer, Magnetic Tunnel Junction (MTJ), capping layer, synthetic antiferromagnetic layer, and upper electrode formed on the substrate.