公开(公告)号：US10886274B2

公开(公告)日：2021-01-05

申请号：US16465392

申请日：2017-11-30

申请人： Industry-University Cooperation Foundation Hanyang University

发明人： Jea Gun Park ,  Seung Hyun Song ,  Min Won Kim

IPC分类号： H01L27/108 ,  H01L27/102 ,  H01L29/87

摘要： The present invention discloses a two-terminal vertical 1T-DRAM and a method of fabricating the same. According to one embodiment of the present invention, the two-terminal vertical 1T-DRAM includes a cathode layer formed of a first-type high-concentration semiconductor layer; a base region including a second-type low-concentration semiconductor layer formed on the cathode layer and a first-type low-concentration semiconductor layer formed on the second-type low-concentration semiconductor layer; and an anode layer formed of a second-type high-concentration semiconductor layer on the first-type low-concentration semiconductor layer.