公开(公告)号：US20240151665A1

公开(公告)日：2024-05-09

申请号：US18282624

申请日：2021-03-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei NAKAMURA ,  Naoko TAKEDA ,  Natsuki TSUNO ,  Satoshi TAKADA ,  Heita KIMIZUKA

IPC: G01N23/2251 ,  H01J37/26

CPC classification number: G01N23/2251 ,  H01J37/265 ,  G01N2223/6116 ,  H01J2237/24564 ,  H01J2237/2806

Abstract: Provided is an inspection system capable of estimating electric characteristics of a sample with high accuracy regardless of an initial charging state of a wafer. The inspection system includes a charged particle beam device and a computer system, and inspects the electric characteristics of the sample. The inspection system evaluates initial charging of an inspection region including inspection patterns based on reference data indicating a secondary charged particle signal from a reference pattern corresponding to a plurality of pulse conditions. The reference pattern has the same electric characteristics as the inspection pattern and initial charging therein caused by electric charges that are not emitted according to a discharge time constant of the sample is negligible. The reference pattern is obtained by irradiating the reference pattern with a pulse charged particle beam under a plurality of pulse conditions.

公开(公告)号：US20230274417A1

公开(公告)日：2023-08-31

申请号：US18315046

申请日：2023-05-10

Applicant: Hitachi High-Tech Corporation

Inventor： Heita KIMIZUKA ,  Yohei NAKAMURA ,  Natsuki TSUNO ,  Muneyuki FUKUDA

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T2207/30148 ,  G06T2207/10152

Abstract: An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step 603), and derives (Step 605) a type of a defect by referring to (Step 604) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

公开(公告)号：US20220216032A1

公开(公告)日：2022-07-07

申请号：US17610908

申请日：2019-05-21

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Minami SHOUJI ,  Natsuki TSUNO ,  Hiroya OHTA ,  Daisuke BIZEN ,  Hajime KAWANO

IPC: H01J37/22 ,  H01J37/244

Abstract: An object of the invention is to provide a charged particle beam apparatus capable of acquiring an observation image having a high contrast in a sample whose light absorption characteristic depends on a light wavelength. The charged particle beam apparatus according to the invention irradiates the sample with light, generates an observation image of the sample, changes an irradiation intensity per unit time of the light, and then generates a plurality of the observation images having different contrasts (see FIG. 4).

公开(公告)号：US20230377837A1

公开(公告)日：2023-11-23

申请号：US18031359

申请日：2020-10-26

Applicant: Hitachi High-Tech Corporation

Inventor： Yohei NAKAMURA ,  Natsuki TSUNO ,  Yasuhiro SHIRASAKI ,  Minami SHOUJI ,  Shota MITSUGI ,  Yuko SASAKI

IPC: H01J37/26 ,  H01J37/244 ,  H01J37/22 ,  H01J37/28

CPC classification number: H01J37/265 ,  H01J37/244 ,  H01J37/226 ,  H01J37/28 ,  H01J2237/2448

Abstract: Charged particle beam apparatus includes: a charged particle optical system to irradiate a sample with a pulsed charged particle beam; an optical system to irradiate the sample with light; a detector configured to detect a secondary charged particle emitted by irradiating the sample with the pulsed charged particle beam; a control unit configured to control the charged particle optical system to irradiate the sample with the pulsed charged particle beam under a predetermined electron beam pulse condition, and control the optical system to irradiate the sample with the light under a predetermined light irradiation condition; and a computation device configured to set the predetermined light irradiation condition based on a difference between a secondary charged particle signal amount detected under a first electron beam pulse condition and a secondary charged particle signal amount detected under a second electron beam pulse condition different from the first electron beam pulse condition.

公开(公告)号：US20230369012A1

公开(公告)日：2023-11-16

申请号：US18029004

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Naoko TAKEDA ,  Natsuki TSUNO ,  Satoshi TAKADA ,  Yuto HATTORI

IPC: H01J37/22 ,  H01J37/28 ,  H01J37/244 ,  H01J37/20

CPC classification number: H01J37/222 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

Abstract: Provided is a technique and the like capable of specifying irradiation areas or irradiation positions of a beam and a light as clearly as possible. A charged particle beam apparatus 1 includes: a position adjustment mark 10 provided on a stage 6 and irradiated with a beam b1 and a light a1; and a mechanism setting an irradiation position of the beam b1 and an irradiation position of the light a1 with respect to the stage 6 and changing a relative positional relationship including a distance between the irradiation position of the light a1 and the stage 6. A computer system 2 generates a first image in which the position adjustment mark 10 is reflected based on a first detection signal obtained by irradiating the position adjustment mark 10 with the beam b1, generates a second image in which an irradiation area of the light a1 is reflected in the vicinity of the position adjustment mark 10 based on a second detection signal obtained by irradiating the position adjustment mark 10 with the light a1, and adjusts an irradiation position of the beam b1 and an irradiation position of the light a1 based on the first image and the second image obtained when a positional relationship is changed by the mechanism.

公开(公告)号：US20230273254A1

公开(公告)日：2023-08-31

申请号：US18026718

申请日：2020-09-30

Applicant: Hitachi High-Tech Corporation

Inventor： Shota MITSUGI ,  Yohei NAKAMURA ,  Daisuke BIZEN ,  Junichi FUSE ,  Satoshi TAKADA ,  Natsuki TSUNO

IPC: G01R31/265

CPC classification number: G01R31/2653 ,  G01R31/2656

Abstract: A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

公开(公告)号：US20230273253A1

公开(公告)日：2023-08-31

申请号：US18016882

申请日：2020-09-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro SHIRASAKI ,  Natsuki TSUNO ,  Minami SHOUJI ,  Makoto SAKAKIBARA ,  Satoshi TAKADA

IPC: G01R31/265

CPC classification number: G01R31/2653

Abstract: A semiconductor inspection device 1 having a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetector 29 configured to detect signal light; a control unit 11 configured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

公开(公告)号：US20210027455A1

公开(公告)日：2021-01-28

申请号：US16885727

申请日：2020-05-28

Applicant: Hitachi High-Tech Corporation

Inventor： Heita KIMIZUKA ,  Natsuki TSUNO

IPC: G06T7/00 ,  H01J37/28 ,  H01J37/22

Abstract: An object of the present disclosure is to provide a system in which electrical characteristics of an element formed on a sample can be evaluated. In order to achieve the above-described object, disclosed is a system including: an image acquisition tool; and a computer system that includes one or more processors and is configured to be communicable with the image acquisition tool, in which electrical characteristic are derived by receiving information regarding two or more characteristics of a specific pattern that is included in a plurality of images acquired from the image acquisition tool under at least two different image acquisition conditions and by referring to, for the information, relation information between information regarding two or more characteristics and electrical characteristics of an element formed on a sample, the characteristics being extracted from at least two pieces of image data acquired from the image acquisition tool under at least two image acquisition conditions.