公开(公告)号：US07138283B2

公开(公告)日：2006-11-21

申请号：US10865927

申请日：2004-06-14

Applicant: Hiroshi Matsushita ,  Kenichi Kadota

Inventor： Hiroshi Matsushita ,  Kenichi Kadota

IPC: G01R31/26

CPC classification number: G11C29/006 ,  G11C2029/0403 ,  G11C2029/4402 ,  G11C2029/5002

Abstract: A method of detecting a wafer failure includes extracting the wafer ID of a target wafer in the target lot from the lot ID, extracting the location information of a failure in the target wafer, calculating a to-be-quantified first wafer feature amount for unevenness of a wafer failure distribution, calculating a first lot feature amount for each target lot, extracting a fabrication process for the target lot and a fabrication apparatus, carrying out a significant test for the fabrication apparatus used in each fabrication process, and detecting the fabrication apparatus with a significant difference as a first abnormal apparatus.

Abstract translation: 检测晶片故障的方法包括从批号ID提取目标批次中的目标晶片的晶片ID，提取目标晶片中的故障的位置信息，计算用于不均匀的待定量的第一晶片特征量 计算每个目标批次的第一批特征量，提取目标批次的制造过程和制造装置，对在每个制造过程中使用的制造装置进行显着测试，并检测制造装置 作为第一异常装置具有显着差异。

公开(公告)号：US20050251365A1

公开(公告)日：2005-11-10

申请号：US11090217

申请日：2005-03-28

Applicant: Hiroshi Matsushita ,  Kenichi Kadota

Inventor： Hiroshi Matsushita ,  Kenichi Kadota

IPC: G05B19/418 ,  G06F11/30 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/66

CPC classification number: G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32222 ,  Y02P90/10 ,  Y02P90/14 ,  Y02P90/22

Abstract: A system for identifying a manufacturing tool causing a failure, includes a data generating module generating factorial effect data, based on information on a failure lot group by using an orthogonal array, a chart generating module generating a factorial effect chart based on the factorial effect data, a selection module selecting failure lots caused by the same reason for a failure from among the failure lot group, based on the factorial effect chart, and an identification module identifying a manufacturing tool used as a common tool for the selected plurality of failure lots, based on history information of the manufacturing tool group.

Abstract translation: 一种用于识别导致故障的制造工具的系统包括：数据生成模块，基于通过使用正交阵列的故障批次组的信息来生成因子效果数据;图表生成模块，基于所述因子效应数据生成阶乘效果图 选择模块，基于所述阶乘效应图，选择由所述失败批次群组中与故障相同原因造成的故障批次;以及识别模块，其识别用作所选择的多个故障批次的共同工具的制造工具， 根据制造工具组的历史信息。

公开(公告)号：US20050021303A1

公开(公告)日：2005-01-27

申请号：US10865927

申请日：2004-06-14

Applicant: Hiroshi Matsushita ,  Kenichi Kadota

Inventor： Hiroshi Matsushita ,  Kenichi Kadota

IPC: H01L21/66 ,  G06F11/30 ,  G11C29/00 ,  H01L21/02

CPC classification number: G11C29/006 ,  G11C2029/0403 ,  G11C2029/4402 ,  G11C2029/5002

Abstract: A method of detecting a wafer failure includes extracting the wafer ID of a target wafer in the target lot from the lot ID, extracting the location information of a failure in the target wafer, calculating a to-be-quantified first wafer feature amount for unevenness of a wafer failure distribution, calculating a first lot feature amount for each target lot, extracting a fabrication process for the target lot and a fabrication apparatus, carrying out a significant test for the fabrication apparatus used in each fabrication process, and detecting the fabrication apparatus with a significant difference as a first abnormal apparatus.

Abstract translation: 检测晶片故障的方法包括从批号ID提取目标批次中的目标晶片的晶片ID，提取目标晶片中的故障的位置信息，计算用于不均匀的待定量的第一晶片特征量 计算每个目标批次的第一批特征量，提取目标批次的制造过程和制造装置，对在每个制造过程中使用的制造装置进行显着测试，并检测制造装置 作为第一异常装置具有显着差异。

公开(公告)号：US06794661B2

公开(公告)日：2004-09-21

申请号：US10118064

申请日：2002-04-09

Applicant: Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

Inventor： Mitsukuni Tsukihara ,  Mitsuaki Kabasawa ,  Michiro Sugitani ,  Hiroki Murooka ,  Hiroshi Matsushita

IPC: H01J37317

CPC classification number: H01J37/3171 ,  G21K1/08 ,  H01J2237/004

Abstract: In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.

Abstract translation: 在根据本发明的离子注入装置中，借助于提取电极从离子源提取离子。 通过质量分析磁体装置和质量分析狭缝对由此提取的离子进行质量分析，从而将所需的离子注入到基板中。 用于产生尖点磁场的磁体沿着从质量分析磁铁装置的前部延伸到后部的离子束线串联设置。

公开(公告)号：US4933219A

公开(公告)日：1990-06-12

申请号：US325090

申请日：1989-03-20

Applicant: Yukinori Sakumoto ,  Atsushi Koshimura ,  Hiroshi Matsushita ,  Masaki Tsushima

Inventor： Yukinori Sakumoto ,  Atsushi Koshimura ,  Hiroshi Matsushita ,  Masaki Tsushima

IPC: C09J7/02 ,  H01L21/52 ,  H01L21/58

CPC classification number: H01L24/83 ,  C09J7/0203 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L2221/68327 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32245 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  Y10S428/906

Abstract: An adhesive tape for die bonding is disclosed, comprising a continuous tape wound on a reel, the continuous tape having a structure that an adhesive layer composed mainly of a filler and a binder comprised of an epoxy resin and a polyester resin is laminated on a release film. According to the adhesive tape for die bonding of the invention, bonding of semiconductor elements can be attained with good workability and high reliability by very easily handling of the adhesive tape.

Abstract translation: 公开了一种用于芯片接合的胶带，其包括卷绕在卷轴上的连续带，该连续带具有将主要由填料和由环氧树脂和聚酯树脂组成的粘合剂组成的粘合剂层层压在释放 电影。 根据本发明的芯片接合用胶带，通过非常容易地处理粘合带，可以获得良好的加工性和高可靠性的半导体元件的接合。

公开(公告)号：US20140169004A1

公开(公告)日：2014-06-19

申请号：US14239451

申请日：2011-09-27

Applicant: Hiromichi Nakajima ,  Shinichiro Matsumoto ,  Masahiko Kamata ,  Yuichiro Takahara ,  Hiroshi Matsushita ,  Shinichi Kumashiro ,  Shigeru Osawa

Inventor： Hiromichi Nakajima ,  Shinichiro Matsumoto ,  Masahiko Kamata ,  Yuichiro Takahara ,  Hiroshi Matsushita ,  Shinichi Kumashiro ,  Shigeru Osawa

IPC: F21V29/00

CPC classification number: F21V29/507 ,  F21K9/20 ,  F21K9/68 ,  F21S8/026 ,  F21V23/0442 ,  F21V29/70 ,  F21Y2115/10

Abstract: A lamp device includes a semiconductor light-emitting element. The lamp device includes a housing including a heat conductive part, and the heat conductive part is thermally connected to an external thermal radiator. Heat generated by the semiconductor light-emitting element is conducted to the thermal radiator through the heat conductive part. A thermosensor is thermally connected to the heat conductive part. The lamp device includes a lighting circuit to light the semiconductor light-emitting element, and the lighting circuit controls an output of the semiconductor light-emitting element according to detection of the thermosensor.

Abstract translation: 灯装置包括半导体发光元件。 灯装置包括：壳体，包括导热部分，并且热传导部分热连接到外部散热器。 由半导体发光元件产生的热量通过导热部件传导到散热器。 热传感器热连接到导热部分。 灯装置包括点亮电路以点亮半导体发光元件，并且点亮电路根据热敏传感器的检测来控制半导体发光元件的输出。

公开(公告)号：US20130201696A1

公开(公告)日：2013-08-08

申请号：US13814435

申请日：2011-09-27

Applicant: Takeshi Hisayasu ,  Hiroshi Matsushita

Inventor： Takeshi Hisayasu ,  Hiroshi Matsushita

IPC: F21V29/00

CPC classification number: F21V17/164 ,  F21K9/232 ,  F21K9/238 ,  F21V3/02 ,  F21V23/006 ,  F21V29/507 ,  F21V29/70 ,  F21Y2115/10

Abstract: A bulb-shaped lamp includes a housing which is formed of metal, and formed in a cylindrical shape which widely opens toward one end side using press molding. A case which is formed of a synthetic resin, and formed in a cylindrical shape which widely opens toward one end side along the inner surface of the housing is arranged in the housing. A base is attached to the other end side of the case. A heat radiating plate on which a light emitting module having a semiconductor light emitting element is mounted is arranged on one end side of the housing. A lighting circuit is accommodated in the case. The lighting circuit includes a lighting circuit board which is vertically arranged along the lamp axis direction in the case. The lighting circuit board is formed in a shape in which one end side becomes wide in width along the inner surface shape of the case, and is arranged at a position which is close to the base side in the case.

Abstract translation: 灯泡状灯包括由金属形成的壳体，并且形成为圆筒状，其通过压模成型朝向一端广泛地开口。 由外壳形成的由合成树脂形成的壳体形成为沿着壳体的内表面向一端侧大致开口的圆筒状的壳体。 基座附接到壳体的另一端。 其上安装有具有半导体发光元件的发光模块的散热板设置在壳体的一端侧。 照明电路容纳在壳体中。 照明电路包括在壳体中沿灯轴方向垂直设置的照明电路板。 照明电路板形成为沿着壳体的内表面形状的一端侧变宽的形状，并且布置在壳体的靠近底侧的位置。

公开(公告)号：US08170707B2

公开(公告)日：2012-05-01

申请号：US12256265

申请日：2008-10-22

Applicant: Hiroshi Matsushita ,  Kenichi Kadota ,  Toshiyuki Aritake

Inventor： Hiroshi Matsushita ,  Kenichi Kadota ,  Toshiyuki Aritake

IPC: G06F19/00

CPC classification number: G05B19/41875 ,  G05B23/0229 ,  G05B2219/1112 ,  G05B2219/32222 ,  G05B2219/45031 ,  G05B2223/02 ,  Y02P90/22

Abstract: A method for inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process, inputting a die sort map created by a die sort test after the wafer processing process, setting region segments in the wafer, setting a region number for each segment, calculating foreign substance density of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount, calculating failure density in the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount, calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount, and identifying a processing process cause of failure occurrence.

Abstract translation: 一种用于在晶片处理过程中的每个处理过程之后输入通过异物检查创建的异物检查图的方法，输入在晶片处理过程之后通过管芯分类测试创建的管芯分类图，在 晶片，根据异物检查图来计算各段的区域编号，计算区域段的异物密度，并使用区域编号绘制异物密度，计算异物检查图波形特征量， 计算区域段中的故障密度，并使用区域编号绘制故障密度，计算模具分类图波形特征量，计算异物检查图波形特征量与模具之间的相似度 排序图波形特征量，并识别处理过程原因 的失败发生。

公开(公告)号：US07529631B2

公开(公告)日：2009-05-05

申请号：US11812398

申请日：2007-06-19

Applicant: Hiroshi Matsushita ,  Yasutaka Arakawa ,  Junji Sugamoto

Inventor： Hiroshi Matsushita ,  Yasutaka Arakawa ,  Junji Sugamoto

IPC: G01B5/30

CPC classification number: G05B19/41875 ,  G01N21/9501 ,  G05B2219/32221 ,  G05B2219/32222 ,  Y02P90/04 ,  Y02P90/22

Abstract: A defect detection system includes a data acquiring section that acquires time series data of device parameter of each manufacturing device including an exposure device, and information on defect distribution in an area with a size smaller than a chip area size, a pattern classifying section that assembles the information on the defect distribution in units of shot or chip areas, and classifies the distributions to a defect pattern, a feature quantity calculating section that processes the time series data and calculates a feature quantity, a significant difference test section that calculates occurrence frequency distributions of the shot or chip area wherein the defect pattern to the feature quantity exists and does not exist, respectively, and determines the presence/absence of significant difference between the frequency distributions, and a defect detecting section that detects the device parameter corresponding to the feature quantity as the cause of defect of the defect pattern.

Abstract translation: 缺陷检测系统包括数据获取部分，其获取包括曝光装置的每个制造装置的装置参数的时间序列数据以及尺寸小于芯片面积尺寸的区域中的缺陷分布的信息;模式分类部， 关于以镜头或码片区域为单位的缺陷分布的信息，并将分布分类为缺陷图案，处理时间序列数据并计算特征量的特征量计算部分，计算出现频率分布的显着差异测试部分 分别存在特征量的缺陷图案并且不存在的拍摄或切片区域，并且确定频率分布之间存在/不存在显着差异;以及缺陷检测部分，其检测与特征对应的设备参数 数量作为缺陷模式缺陷的原因。

公开(公告)号：US20080258074A1

公开(公告)日：2008-10-23

申请号：US12106735

申请日：2008-04-21

Applicant: Mitsukuni TSUKIHARA ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

Inventor： Mitsukuni TSUKIHARA ,  Mitsuaki Kabasawa ,  Hiroshi Matsushita ,  Takanori Yagita ,  Yoshitaka Amano ,  Yoshito Fujii

IPC: H01J3/30

CPC classification number: H01J37/3171 ,  H01J37/1477 ,  H01J2237/0042 ,  H01J2237/028

Abstract: In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

Abstract translation: 在包括具有两电极型偏转扫描电极的光束扫描器的光束处理装置中，光束扫描器还包括分别在两电极型偏转扫描电极的上游侧和下游侧的附近的屏蔽抑制电极组件，并具有矩形的开口 用于通过带电粒子束的形状。 每个屏蔽抑制电极组件是包括一片抑制电极和插入抑制电极的两片屏蔽接地电极的组装电极。 两电极型偏转扫描电极的前侧部分和后侧部分被两片屏蔽接地电极屏蔽。