公开(公告)号：US20170162726A1

公开(公告)日：2017-06-08

申请号：US15434373

申请日：2017-02-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhisa YAMAMURA ,  Akira SAKAMOTO ,  Terumasa NAGANO ,  Yoshitaka ISHIKAWA ,  Satoshi KAWAI

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/107 ,  H01L27/144 ,  H01L31/028

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L27/1464 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A p− type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n+ type impurity region 23, a p+ type impurity region 25, and a region to be depleted with application of a bias voltage in the p− type semiconductor substrate 20. An irregular asperity 10 is formed in the second principal surface 20b of the p− type semiconductor substrate 20. An accumulation layer 37 is formed on the second principal surface 20b side of the p− type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed.

公开(公告)号：US20170033137A1

公开(公告)日：2017-02-02

申请号：US15293784

申请日：2016-10-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhisa YAMAMURA ,  Kenichi SATO

IPC: H01L27/144 ,  H01L31/107 ,  H01L27/146

CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

Abstract translation: 光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。 阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个 的光电检测器通道。

公开(公告)号：US20150380457A1

公开(公告)日：2015-12-31

申请号：US14768843

申请日：2014-02-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Terumasa NAGANO ,  Kazuhisa YAMAMURA ,  Kenichi SATO ,  Ryutaro TSUCHIYA

IPC: H01L27/146 ,  G01N23/04 ,  H01L31/0224 ,  H01L31/115 ,  G01T1/24 ,  G01T1/29

CPC classification number: H01L27/14663 ,  G01N23/046 ,  G01T1/241 ,  G01T1/2985 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14661 ,  H01L31/022408 ,  H01L31/115 ,  H01L2224/13

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract translation: 检测器的每个半导体芯片包括具有多个光电探测器单元的半导体衬底，形成在半导体衬底的前表面上的绝缘层，布置在绝缘层上的公共电极，用于将每个 光电检测器单元和公共电极，以及通过半导体衬底的通孔从公共电极延伸到半导体衬底的后表面的通孔。

公开(公告)号：US20130187251A1

公开(公告)日：2013-07-25

申请号：US13774002

申请日：2013-02-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhisa YAMAMURA ,  Kenichi SATO

IPC: H01L27/14

CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

Abstract translation: 光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。 阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个 的光电检测器通道。