公开(公告)号：US20250160028A1

公开(公告)日：2025-05-15

申请号：US18839510

申请日：2022-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Fumiya TANAKA ,  Atsunori YAMADA ,  Yasuhito YONETA

IPC: H10F39/00

Abstract: A solid-state imaging element includes a semiconductor substrate, a first element unit, and a second element unit. The first element unit includes a light receiving part and a transfer part, and the second element unit includes a capacitance part. The transfer part includes a first transfer electrode, a second transfer electrode, and an insulating layer. The capacitance part includes a first capacitance electrode and a second capacitance electrode that overlap each other, and an insulating layer. A part of the first transfer electrode overlaps a part of the second transfer electrode. The insulating layer includes a first portion positioned between a part of the first transfer electrode and a part of the second transfer electrode. The insulating layer includes a second portion positioned between the first capacitance electrode and the second capacitance electrode. A thickness of the first portion is larger than a thickness of the second portion.

公开(公告)号：US20220208809A1

公开(公告)日：2022-06-30

申请号：US17608212

申请日：2020-07-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu MURAMATSU ,  Shin-ichiro TAKAGI ,  Yasuhito YONETA

IPC: H01L27/146 ,  H04N5/3745

Abstract: A backside incident-type imaging element includes a semiconductor substrate having a front surface and a back surface on an opposite side from the front surface, a ground potential being applied to the semiconductor substrate, and a semiconductor layer formed on the front surface, in which the semiconductor layer has a first element part that includes a light receiving portion generating a signal charge according to incident light from a side of the back surface and outputs a signal voltage corresponding to the signal charge, and a second element part that includes an analog-digital converter converting the signal voltage output from the first element part into a digital signal.

公开(公告)号：US20170229501A1

公开(公告)日：2017-08-10

申请号：US15502003

申请日：2015-08-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Kentaro MAETA ,  Yasuhito YONETA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H01L27/146 ,  H01L31/02 ,  H01L27/148

CPC classification number: H01L27/14607 ,  H01L27/14609 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/14812 ,  H01L27/14831 ,  H01L27/14893 ,  H01L31/02002 ,  H04N5/372

Abstract: A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge generated in the corresponding photoelectric converting unit. The photoelectric converting unit includes a photosensitive region that generates the charge in accordance with light incidence, and an electric potential gradient forming unit that accelerates migration of charge in a second direction in the photosensitive region. The charge-accumulating unit includes: a plurality of regions (semiconductor layers) having an impurity concentration gradually changed in one way in the second direction, and electrodes adapted to apply electric fields to the plurality of regions. Each of the electrodes is disposed over the plurality of regions having the impurity concentration gradually varied.

公开(公告)号：US20160286147A1

公开(公告)日：2016-09-29

申请号：US15033408

申请日：2014-10-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H04N5/378 ,  H01L27/146 ,  H04N5/225 ,  H01L27/148

CPC classification number: H04N5/378 ,  H01L27/14685 ,  H01L27/14812 ,  H01L27/14825 ,  H01L27/14837 ,  H04N5/2253

Abstract: Each pixel region PX includes a photoelectric conversion region S1, a resistive gate electrode R, a first transfer electrode T1, a second transfer electrode T2, a barrier region B positioned directly beneath the first transfer electrode T1 in a semiconductor substrate 10, and a charge accumulation region S2 positioned directly beneath the second transfer electrode T2 in the semiconductor substrate 10. An impurity concentration of the barrier region B is lower than an impurity concentration of the charge accumulation region S2, and the first transfer electrode T1 and the second transfer electrode T2 are electrically connected to each other.

Abstract translation: 每个像素区域PX包括光电转换区域S1，电阻栅电极R，第一转移电极T1，第二转移电极T2，位于半导体衬底10中的第一转移电极T1正下方的势垒区域B，以及电荷 存储区域S2位于半导体衬底10中的第二传输电极T2正下方。势垒区域B的杂质浓度低于电荷累积区域S2的杂质浓度，第一传输电极T1和第二传输电极T2 彼此电连接。

公开(公告)号：US20160268334A1

公开(公告)日：2016-09-15

申请号：US15032130

申请日：2014-10-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro TAKAGI ,  Yasuhito YONETA ,  Hisanori SUZUKI ,  Masaharu MURAMATSU

IPC: H01L27/148

CPC classification number: H01L27/14825 ,  H01L27/14812 ,  H01L27/14843 ,  H04N5/3692 ,  H04N5/37213

Abstract: An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.

Abstract translation: 光学检测单元AR被分割成具有在列方向上对齐的多个像素区域PX。 针对每个光学检测单元AR集成来自多个像素区域PX的信号，并且以时间序列将该信号作为与一维光学图像对应的电信号输出。 每个像素区域PX包括促进光电转换区域中的电荷转移的电阻栅电极R和电荷累积区域S2。 漏极区域ARD通过沟道区域与电荷累积区域S2相邻。