公开(公告)号：US20160322417A1

公开(公告)日：2016-11-03

申请号：US15104359

申请日：2014-12-16

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Kenichi SATO ,  Ryutaro TSUCHIYA

IPC: H01L27/146 ,  H01L31/115

CPC classification number: H01L27/14663 ,  H01L27/1446 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L27/14658 ,  H01L27/14676 ,  H01L31/1075 ,  H01L31/115

Abstract: Disclosed is an optical detector in which a boundary line BY defining an edge of a semiconductor region 14 is covered with signal read wiring E3 and a capacitor is configured between the semiconductor region 14 and the signal read wiring E3. High frequency components peak components of a carrier are quickly extracted to the outside via the capacitor, but the signal read wiring E3 covers the boundary line BY so that a semiconductor potential in the vicinity of the boundary line is stabilized and an output signal is stabilized.

Abstract translation: 公开了一种光检测器，其中限定半导体区域14的边缘的边界线BY被信号读取布线E3覆盖，并且在半导体区域14和信号读取布线E3之间配置电容器。 载波的高频分量峰值分量通过电容器迅速提取到外部，但是信号读取线E3覆盖边界线BY，使得边界线附近的半导体电位稳定并且输出信号稳定。

公开(公告)号：US20150380457A1

公开(公告)日：2015-12-31

申请号：US14768843

申请日：2014-02-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshimaro FUJII ,  Terumasa NAGANO ,  Kazuhisa YAMAMURA ,  Kenichi SATO ,  Ryutaro TSUCHIYA

IPC: H01L27/146 ,  G01N23/04 ,  H01L31/0224 ,  H01L31/115 ,  G01T1/24 ,  G01T1/29

CPC classification number: H01L27/14663 ,  G01N23/046 ,  G01T1/241 ,  G01T1/2985 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14661 ,  H01L31/022408 ,  H01L31/115 ,  H01L2224/13

Abstract: Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

Abstract translation: 检测器的每个半导体芯片包括具有多个光电探测器单元的半导体衬底，形成在半导体衬底的前表面上的绝缘层，布置在绝缘层上的公共电极，用于将每个 光电检测器单元和公共电极，以及通过半导体衬底的通孔从公共电极延伸到半导体衬底的后表面的通孔。

公开(公告)号：US20130187251A1

公开(公告)日：2013-07-25

申请号：US13774002

申请日：2013-02-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuhisa YAMAMURA ,  Kenichi SATO

IPC: H01L27/14

CPC classification number: H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

Abstract: A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.

Abstract translation: 光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。 阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个 的光电检测器通道。