公开(公告)号：US20210162500A1

公开(公告)日：2021-06-03

申请号：US17169563

申请日：2021-02-08

申请人： FUJIFILM CORPORATION

发明人： Masahiro TAKATA ,  Atsushi TANAKA

IPC分类号： B22F9/16 ,  C08F20/18

摘要： Provided are a method for producing indium tin oxide particles and a method for producing a curable composition, the methods including a step of obtaining a precursor solution including indium and tin by heating indium acetate and tin acetate in a solvent including a carboxylic acid and having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by dropwise adding the obtained precursor solution to a solvent having a hydroxy group and having 14 to 22 carbon atoms, which has a temperature of 230° C. to 320° C., in which an acetic acid concentration in the precursor solution is in a range of 0.5% by mass to 6% by mass.

公开(公告)号：US20160005879A1

公开(公告)日：2016-01-07

申请号：US14856047

申请日：2015-09-16

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/786 ,  C01G15/00 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7869 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/74 ,  C01P2006/40 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969

摘要： Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)≧0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

摘要翻译： 本发明提供一种金属氧化物膜，其特征在于，具有在XPS光谱中具有峰值位置的成分在与402eV〜405eV的结合能对应的范围内，所述金属氧化物膜满足由式（1）表示的关系， ：A /（A + B）≥0.39，当通过峰值分离获得归因于氮1s电子的峰值能量的强度时，其制造方法，氧化物半导体膜，薄膜晶体管，显示装置 ，图像传感器和X射线传感器。 在式（1）中，A表示在与402eV〜405eV的结合能对应的范围内具有峰值位置的成分的峰面积，B表示峰值位置在一定范围内的成分的峰面积 对应于从406eV到408eV的结合能。

公开(公告)号：US20140131696A1

公开(公告)日：2014-05-15

申请号：US14160730

申请日：2014-01-22

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Masahiro TAKATA ,  Fumihiko MOCHIZUKI ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/66 ,  H01L27/15 ,  H01L21/02 ,  H01L27/146 ,  H01L29/786 ,  H01L27/32

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14632 ,  H01L27/14659 ,  H01L27/14687 ,  H01L27/148 ,  H01L27/156 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869 ,  H01L29/78696

摘要： There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.

摘要翻译： 提供一种制造场效应晶体管的方法，包括：在设置在栅电极上的栅极绝缘层上形成第一氧化物半导体膜; 在所述第一氧化物半导体膜上形成第二氧化物半导体膜，所述第二氧化物半导体膜与所述第一氧化物半导体膜的阳离子组成不同，导电性低于所述第一氧化物半导体膜; 在氧化气氛中在300℃以上进行热处理; 在所述第二氧化物半导体膜上形成第三氧化物半导体膜，所述第三氧化物半导体膜的阳离子组成与所述第一氧化物半导体膜不同，导电率低于所述第一氧化物半导体膜; 在氧化气氛中进行热处理; 以及在所述第三氧化物半导体膜上形成源电极和漏电极。

公开(公告)号：US20130234135A1

公开(公告)日：2013-09-12

申请号：US13871305

申请日：2013-04-26

申请人： FUJIFILM CORPORATION

发明人： Fumihiko MOCHIZUKI ,  Masahiro TAKATA ,  Masashi ONO ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78693 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/78603

摘要： A thin film transistor includes at least a gate electrode, a gate insulating film, an active layer, a source electrode and a drain electrode are provided on a substrate, with the source electrode and the drain electrode being provided on the active layer. The active layer is configured of an amorphous oxide semiconductor. A first amount of moisture present in the gate insulating film is smaller than a second amount of moisture present in the active layer.

摘要翻译： 薄膜晶体管至少包括栅电极，栅极绝缘膜，有源层，源电极和漏电极，源极电极和漏电极设置在有源层上。 有源层由无定形氧化物半导体构成。 存在于栅极绝缘膜中的第一量的水分小于活性层中存在的第二量的水分。

公开(公告)号：US20160190452A1

公开(公告)日：2016-06-30

申请号：US15058336

申请日：2016-03-02

申请人： FUJIFILM Corporation

发明人： Masashi ONO ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L51/00 ,  H01L51/05

CPC分类号： H01L51/009 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/0003 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/0092 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

摘要： There is provided a semiconductor film, including: an aggregate of oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn; and at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles: in which, in General Formula (A), each of X1 and X2 independently represents —SH, —NH2, —OH, or —COOH, and each of A1 and B1 independently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, in which, in General Formula (B), each of X3 and X4 independently represents —SH, —NH2, —OH, or —COOH and each of A2 and B2 independently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, and in which, in General Formula (C), X5 represents —SH, —NH2, or —OH, and A3 represents a hydrogen atom or a substituent having an atomic number of 1 to 10.

摘要翻译： 提供一种半导体膜，其包括：包含选自In，Zn和Sn中的至少一种类型的金属的氧化物微粒的集合体; 和选自下述通式（A）表示的配体，下述通式（B）表示的配位体和下述通式（C）表示的配体的配体中的至少一种配体，以及 其与氧化物微粒配位：其中，在通式（A）中，X1和X2各自独立地表示-SH，-NH2，-OH或-COOH，A1和B1各自独立地表示氢原子或 原子数为1〜10的取代基，其中，在通式（B）中，X 3和X 4各自独立地表示-SH，-NH 2，-OH或-COOH，A2和B2各自独立地表示氢 原子或原子数为1〜10的取代基，其中，在通式（C）中，X 5表示-SH，-NH2或-OH，A3表示氢原子或原子序数为 1到10。

公开(公告)号：US20160118253A1

公开(公告)日：2016-04-28

申请号：US14989059

申请日：2016-01-06

申请人： FUJIFILM Corporation

发明人： Masahiro TAKATA ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L21/02565 ,  G02F2001/13685 ,  H01L21/02554 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression. 0.9

摘要翻译： 根据本发明的金属氧化物薄膜具有归属于在通过X射线光电子能谱法获得的XPS光谱中在402eV至405eV的结合能范围内的氮的1s电子的峰，其中峰面积 通过分离具有归属于1个电子的氧的金属 - 氧键的峰值的峰而获得，满足以下表达式。 0.9

公开(公告)号：US20140134795A1

公开(公告)日：2014-05-15

申请号：US14158461

申请日：2014-01-17

申请人： FUJIFILM Corporation

发明人： Fumihiko MOCHIZUKI ,  Masahiro TAKATA ,  Masashi ONO ,  Atsushi TANAKA ,  Masayuki SUZUKI

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14614 ,  H01L27/14632 ,  H01L27/14659 ,  H01L27/14687 ,  H01L27/148 ,  H01L27/3262 ,  H01L29/7869

摘要： There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (° C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0

摘要翻译： 提供一种制造半导体元件的方法，包括：形成主要成分为氧化物半导体的半导体膜; 在所述半导体膜的表面上形成第一绝缘膜; 在氧化气氛中进行热处理; 以及在所述第一绝缘膜的表面上形成第二绝缘膜，其中调整所述第一绝缘膜的厚度和所述第三步骤中的热处理温度，使得如果所述第一绝缘膜的厚度被表示 通过Z（nm），热处理温度由T（℃）表示，并且氧进入第一绝缘膜的扩散距离，半导体膜由L（nm）表示，关系式0