Abstract:
Disclosed is an antenna-sub harmonic mixer block, which includes a dielectric block disposed on a PCB substrate having a ground surface, an antenna including first antenna patch provided on the dielectric block and having a metal patch and a slot, and a second antenna patch provided on the dielectric block, spaced apart from the first antenna patch to surround the first antenna patch, and that receives a ground voltage at the same potential as the ground surface of the PCB substrate, an RF ground wire disposed on the dielectric block and connected from the first antenna patch to a surface having the same potential as the ground surface, an RF switching stage disposed on the dielectric block, connected to the first antenna patch, and that provides a switching ON/OFF operation in conjunction with the RF ground wire depending on a magnitude of a local signal LO.
Abstract:
Disclosed is a method for fabricating a terahertz device, the method including providing a substrate, doping a conductive impurity on an upper surface of the substrate to form an electrode layer, patterning the electrode layer to form antenna electrodes, and forming a photomixer between the antenna electrodes.
Abstract:
Provided is a waveguide including an input end configured to receive an input wave from an outside; a filtering portion configured to change a frequency range of the input wave; an output end configured to output an output wave of which a frequency range is changed from the frequency range of the input wave; and an inner wall controller configured to control a size of an inner wall of the filtering portion such that the frequency range of the input wave changes to the frequency range of the output wave.
Abstract:
Provided is a broadband photomixer technology that is a core to generate continuous frequency variable and pulsed terahertz waves. It is possible to enhance light absorptance by applying the transmittance characteristic of a 2D light crystal structure and it is possible to increase the generation efficiency of terahertz waves accordingly. Moreover, it is possible to implement a wide area array type terahertz photomixer by applying an interdigit structure and spatially properly arranging a light crystal structure having various cycles. Accordingly, it is possible to solve difficulty in thermal characteristic and light alignment by mitigating the high light density of a light absorption unit and low photoelectric conversion efficiency is drastically improved. In addition, the radiation pattern of terahertz waves may be electrically controlled through the present invention.
Abstract:
An image acquisition apparatus including a beam source, a beam expander, a beam splitter, an interferometer, a sample, a beam diffuser, a telecentric f-θ lens, a beam scanner, and a beam detector uses a terahertz wave to acquire a surface image and a depth image of the sample.
Abstract:
An apparatus providing a terahertz (THz) wave may comprise at least one THz wave generator each of which generates a THz wave; at least one first phase adjuster adjusting a phase of the generated THz wave; at least one waveguide part receiving and combining the at least one phase-adjusted THz wave radiated from the at least one first phase adjuster, and guiding the combined THz wave; at least one second phase adjuster adjusting a phase of the combined THz wave from the at least one waveguide part, which is connected to the at least one waveguide part or disposed in a portion of the at least one waveguide part; and an output module outputting the THz wave guided from the at least one waveguide part.
Abstract:
Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second semiconductor layer provided over the intermediate layer; an anode provided over the second semiconductor layer; and a cathode provided over the first semiconductor layer, wherein in a sectional view, a width of the second semiconductor layer is greater than a width of the intermediate layer.
Abstract:
Disclosed is a photo diode. The photo diode includes: at least two branched waveguides configured to receive beating signals; absorbing layers disposed in vertical directions to the waveguides, and disposed while being spaced apart from distal ends of the waveguides by a predetermined interval; and one or more intermediate layers formed based on the distal ends of the waveguides and disposed with the absorbing layers at upper end of the one or more intermediate layers.
Abstract:
Provided herein is a large caliber terahertz wave generating device having a photonic crystal structure. The device includes a first electrode and a second electrode. The first electrode includes a first line pattern extending in a first direction, second line patterns coupled to the first line pattern and extending in a second direction, and third line patterns which are coupled to the first line pattern, extend in the second direction, are disposed between the second line patterns, and are longer than the second line patterns. The second electrode includes a fourth line pattern which extends in the first direction, fifth line patterns coupled to the fourth line pattern and extending in the second direction, and sixth line patterns which are coupled to the fourth line pattern, extend in the second direction, are disposed between the fifth line patterns, and are longer than the fifth line patterns.
Abstract:
Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer.