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    REFLECTIVE COLORLESS OPTICAL TRANSMITTER
    11.
    发明申请
    REFLECTIVE COLORLESS OPTICAL TRANSMITTER 有权
    反射无色光学发射器

    公开(公告)号：US20150125159A1

    公开(公告)日：2015-05-07

    申请号：US14258699

    申请日：2014-04-22

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Hyun Soo KIM ,  Dong-Hun LEE ,  Mi-Ran PARK ,  Byung-Seok CHOI ,  Kisoo KIM ,  O-Kyun KWON

    IPC: H04B10/50 ,  H04B10/516

    CPC classification number: H04B10/501 ,  H04B10/2587 ,  H04B10/272 ,  H04B10/516

    Abstract: Provided is a reflective colorless optical transmitter receiving a carrier signal, which is a continuous wave, and outputting a modulated optical signal. The reflective colorless optical transmitter includes a semiconductor optical amplifier (SOA) amplifying an input optical signal allowing the input optical signal to have a gain, an optical modulator connected to the SOA and outputting a modulated optical signal, a high reflectivity facet reflecting the modulated optical signal from the optical modulator, and a Bragg reflection mirror connected to the high reflectivity facet, the optical modulator, and the SOA in series, wherein a Bragg resonator is formed by the Bragg reflecting mirror and the high reflectivity facet.

    Abstract translation: 提供了一种反射无色光发射机，其接收作为连续波的载波信号，并输出调制的光信号。 反射无色光发射机包括放大输入光信号以允许输入光信号具有增益的半导体光放大器（SOA），连接到SOA并输出调制光信号的光调制器，反映调制光的高反射面 来自光调制器的信号，以及连接到高反射面的布拉格反射镜，光调制器和SOA串联，其中由布拉格反射镜和高反射面形成布拉格谐振器。

    OPTICAL DEVICE AND DRIVING METHOD THEREOF
    13.
    发明申请
    OPTICAL DEVICE AND DRIVING METHOD THEREOF 有权

    公开(公告)号：US20210149226A1

    公开(公告)日：2021-05-20

    申请号：US17159947

    申请日：2021-01-27

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Oh Kee KWON ,  Kisoo KIM ,  Su Hwan OH ,  Chul-Wook LEE

    IPC: G02F1/01

    Abstract: An optical device according to the embodiment of the inventive concept includes a waveguide path including a light generation region, a wavelength variable region, and a light modulation region, a first light waveguide layer provided in the light generation region to generate light, a second light waveguide layer provided in the wavelength variable region and connected to the first light waveguide layer, a ring-shaped third light waveguide layer provided in the light modulation region and connected to the second light waveguide layer, and first and second light modulation electrodes spaced apart from each other with the light modulation region therebetween. Here, the first light modulation electrode, the third light waveguide layer, and the second light modulation electrode vertically overlap each other.

    AVALANCHE PHOTODIODE WITH A GUARD RING STRUCTURE AND METHOD THEREOF
    16.
    发明申请
    AVALANCHE PHOTODIODE WITH A GUARD RING STRUCTURE AND METHOD THEREOF 审中-公开
    具有保护环结构的AVALANCHE光电及其方法

    公开(公告)号：US20150079722A1

    公开(公告)日：2015-03-19

    申请号：US14553968

    申请日：2014-11-25

    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

    Inventor： Bongki MHEEN ,  Myoungsook OH ,  Kisoo KIM ,  Jae-Sik SIM ,  Yong-Hwan KWON ,  Eun Soo NAM

    IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/107

    CPC classification number: H01L31/18 ,  H01L31/02002 ,  H01L31/035272 ,  H01L31/107

    Abstract: Disclosed are an avalanche photodiode with a guard ring structure that relieves edge breakdown by an external voltage which is applied through a metal pad which is attached to the guard ring and a manufacturing method thereof. An avalanche photodiode with a guard ring structure includes a plurality of semiconductor layers laminated on a substrate; an active region partially formed above the semiconductor layers; a guard ring which is formed above the semiconductor layers and disposed so as to be spaced apart from the active region and have a ring shape that encloses the active region; and a connecting unit formed on the semiconductor layers to be electrically connected to the guard ring so as to apply an external voltage to the guard ring region. Therefore, the external voltage is applied to the guard ring of the avalanche diode through the connecting unit to relieve the edge breakdown.

    Abstract translation: 本发明公开了一种具有保护环结构的雪崩光电二极管及其制造方法，所述雪崩光电二极管通过外部电压消除边缘击穿，所述外部电压通过附着于保护环的金属焊盘而施加。 具有保护环结构的雪崩光电二极管包括层叠在基板上的多个半导体层; 部分地形成在半导体层之上的有源区; 保护环，其形成在半导体层上方并且被设置成与有源区间隔开并且具有包围有源区的环形形状; 以及连接单元，其形成在所述半导体层上以与所述保护环电连接，以将外部电压施加到所述保护环区域。 因此，通过连接单元将外部电压施加到雪崩二极管的保护环，以缓解边缘故障。

    SEMICONDUCTOR LASER DIODE HAVING WAVEGUIDE LENS
    17.
    发明申请
    SEMICONDUCTOR LASER DIODE HAVING WAVEGUIDE LENS 审中-公开
    具有波长透镜的半导体激光二极管

    公开(公告)号：US20130208750A1

    公开(公告)日：2013-08-15

    申请号：US13781702

    申请日：2013-02-28

    Applicant: Electronics and Telecommunications Research Institute

    Inventor： Kwang-Ryong OH ,  Dong-Churl KIM ,  Kisoo KIM

    IPC: H01S5/10

    CPC classification number: H01S5/1014 ,  B82Y20/00 ,  G02B6/1225 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/0977 ,  G02B27/0988 ,  G02B27/0994 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/12

    Abstract: Provided is a semiconductor laser diode having a waveguide lens. The semiconductor laser diode includes at least one first waveguide having a narrow width, at least one second waveguide having a wide width wider, and at least one waveguide lens having an increasing width from the first waveguide toward the second waveguide and connecting the first waveguide to the second waveguide. Sidewalls of the waveguide lens connecting the first waveguide to the second waveguide may be curved. The second waveguide may be a waveguide providing an optical gain.

    Abstract translation: 提供了具有波导透镜的半导体激光二极管。 半导体激光二极管包括具有窄宽度的至少一个第一波导，宽宽度更宽的至少一个第二波导和从第一波导朝向第二波导的宽度增加的至少一个波导透镜，并将第一波导连接到 第二波导。 将第一波导连接到第二波导的波导透镜的侧壁可以是弯曲的。 第二波导可以是提供光学增益的波导。

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