LASER RADAR SYSTEM
    1.
    发明申请
    LASER RADAR SYSTEM 有权
    激光雷达系统

    公开(公告)号:US20150009485A1

    公开(公告)日:2015-01-08

    申请号:US14321649

    申请日:2014-07-01

    IPC分类号: G01S17/93 G01S7/481 G01S17/89

    摘要: Provided is a laser radar system. The laser radar system includes a first transmission and reception unit sequentially radiating a first laser beam to a plurality of locations within a first view range and receiving a reflected light; and a second transmission and reception unit sequentially radiating a second laser beam to a plurality of locations within a second view range and receiving a reflected light, wherein each of the first transmission and reception unit and the second transmission and reception unit is fixed to a loader and independently searches for the first view range and the second view range.

    摘要翻译: 提供了一种激光雷达系统。 激光雷达系统包括:第一发射和接收单元,其将第一激光束顺序地辐射到第一视野范围内的多个位置并接收反射光; 以及第二发送和接收单元,将第二激光束顺序地辐射到第二视野范围内的多个位置并接收反射光,其中,所述第一发送和接收单元和所述第二发送和接收单元中的每一个被固定到装载器 并且独立地搜索第一视图范围和第二视图范围。

    AVALANCHE PHOTODIODE WITH A GUARD RING STRUCTURE AND METHOD THEREOF
    2.
    发明申请
    AVALANCHE PHOTODIODE WITH A GUARD RING STRUCTURE AND METHOD THEREOF 审中-公开
    具有保护环结构的AVALANCHE光电及其方法

    公开(公告)号:US20150079722A1

    公开(公告)日:2015-03-19

    申请号:US14553968

    申请日:2014-11-25

    摘要: Disclosed are an avalanche photodiode with a guard ring structure that relieves edge breakdown by an external voltage which is applied through a metal pad which is attached to the guard ring and a manufacturing method thereof. An avalanche photodiode with a guard ring structure includes a plurality of semiconductor layers laminated on a substrate; an active region partially formed above the semiconductor layers; a guard ring which is formed above the semiconductor layers and disposed so as to be spaced apart from the active region and have a ring shape that encloses the active region; and a connecting unit formed on the semiconductor layers to be electrically connected to the guard ring so as to apply an external voltage to the guard ring region. Therefore, the external voltage is applied to the guard ring of the avalanche diode through the connecting unit to relieve the edge breakdown.

    摘要翻译: 本发明公开了一种具有保护环结构的雪崩光电二极管及其制造方法,所述雪崩光电二极管通过外部电压消除边缘击穿,所述外部电压通过附着于保护环的金属焊盘而施加。 具有保护环结构的雪崩光电二极管包括层叠在基板上的多个半导体层; 部分地形成在半导体层之上的有源区; 保护环,其形成在半导体层上方并且被设置成与有源区间隔开并且具有包围有源区的环形形状; 以及连接单元,其形成在所述半导体层上以与所述保护环电连接,以将外部电压施加到所述保护环区域。 因此,通过连接单元将外部电压施加到雪崩二极管的保护环,以缓解边缘故障。