Abstract:
Provided is a method of fabricating a light scattering layer. The method includes: coating a first surface of a substrate with a nano structure; and etching the substrate exposed to the nano structure by using the nano structure as an etching mask to allow the first surface of the substrate to have a recess to form first partitions protruding from the first surface of the substrate.
Abstract:
Provided is a method of manufacturing an organic light-emitting device including a graphene layer. The method of manufacturing an organic light-emitting device according to the present invention may include providing a graphene donor unit including a patterned graphene layer, providing a device unit, and attaching the graphene layer of the graphene donor unit to an organic part. The device unit may include a substrate, a lower electrode, and the organic part which are sequentially stacked, and the organic part may include a dopant. The graphene donor unit may include the graphene layer, a release layer, and an elastic stamp layer which are sequentially stacked.
Abstract:
Provided is a hybrid light emitting device. The hybrid light emitting device may include the first light emitting part on the substrate, the capping layer, and the second light emitting part. The first light emitting part may emit light having a first wavelength, and the first light emitting part may include a first electrode, an organic emitting layer, and a second electrode sequentially disposed. A second light emitting part may generate light having a second wavelength. A capping layer may be disposed between the organic emitting layer and the second light emitting part. The capping layer may reflect light having the first wavelength and transmit light having the second wavelength.
Abstract:
Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a lower metal layer on the lower metal oxide layer, a middle metal oxide layer on the lower metal layer, an upper metal layer on the middle metal oxide layer, an upper metal oxide layer on the upper metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.
Abstract:
Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.
Abstract:
Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.
Abstract:
Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.
Abstract:
A composition for forming film having wrinkle structure and a method of forming the film are disclosed. The composition includes photo-curable agent and photoinitiator dissolved in the photo-curable agent. The cut off wavelength of light transmittance of the photo-curable agent is greater than the cut off wavelength of light absorbance of the photoinitiator. Photo-cured thin film is formed at the upper portion of composition layer at an initial time period of irradiation. By subsequent contraction, the photo-cured thin film forms wrinkles. The wrinkle structure is controlled by the relation of the cut off wavelength of light transmittance of the photo-curable agent and the cut off wavelength of light absorbance of the photoinitiator, the photo-curing rate of the composition and the thickness of the composition layer, and the photoinitiator concentration, etc., before photo-curing. The film may increase the emission efficiency of LED and OLED and the sensing effect of sensor.
Abstract:
Provided is a method of manufacturing an organic light-emitting diode including forming an anode on a substrate, forming an organic light-emitting layer on the anode, forming a cathode on the organic light-emitting layer, and forming a light scattering film on the cathode. The light scattering film is a polycrystalline dielectric material composed of anisotropic crystals, and a surface roughness Ra of a top surface of the light scattering film is greater than or equal to about 50 nm by an anisotropic crystal growth of particles of the dielectric material.
Abstract:
The inventive concept provides light emitting devices and methods of manufacturing a light emitting device. The light emitting device may include a transparent substrate including a first region and a second region, a first transparent electrode disposed on a first surface of the transparent substrate, a second transparent electrode facing and spaced apart from the first transparent electrode, an organic light emitting layer disposed between the first and second transparent electrodes, an assistant electrode disposed between the first and second transparent electrodes and selectively masking the second region, and a light path changing structure disposed on a second surface of the transparent substrate and selectively masking the second region.