公开(公告)号：US11621148B2

公开(公告)日：2023-04-04

申请号：US17024261

申请日：2020-09-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Bryan C. Hendrix ,  Oleg Byl ,  Sharad N. Yedave

IPC: H01J37/32 ,  C23C14/48 ,  C23C14/06

Abstract: Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

公开(公告)号：US20220234105A1

公开(公告)日：2022-07-28

申请号：US17584379

申请日：2022-01-25

Applicant: ENTEGRIS, INC.

Inventor： Edward A. Sturm ,  Oleg Byl ,  Montray Leavy ,  Subhash Guddati ,  Thines Kumar Perumal

IPC: B22F10/14 ,  B29C64/165 ,  B33Y10/00 ,  B33Y70/10

Abstract: Described are three-dimensional structures that contain metal-organic-framework adsorbent material and that are prepared by additive manufacturing techniques, as well as methods of preparing the structures by additive manufacturing methods.

公开(公告)号：US20210370259A1

公开(公告)日：2021-12-02

申请号：US17398891

申请日：2021-08-10

Applicant: ENTEGRIS, INC.

Inventor： Lawrence H. Dubois ,  Donald J. Carruthers ,  Melissa A. Petruska ,  Edward A. Sturm ,  Shaun M. Wilson ,  Steven M. Lurcott ,  Bryan C. Hendrix ,  Joseph D. Sweeney ,  Michael J. Wodjenski ,  Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Matthew Thomas Marlow ,  Christopher Scannell ,  Daniel Elzer ,  Kavita Murthi

IPC: B01J20/10 ,  B01J20/20 ,  B01J20/22 ,  B01J20/28 ,  F17C11/00 ,  H01L21/67 ,  B01J20/26 ,  B01J20/02

Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.

公开(公告)号：US11062906B2

公开(公告)日：2021-07-13

申请号：US14912380

申请日：2014-08-14

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

公开(公告)号：US20200206717A1

公开(公告)日：2020-07-02

申请号：US15773652

申请日：2016-11-04

Applicant: ENTEGRIS, INC.

Inventor： Lawrence H. Dubois ,  Donald J. Carruthers ,  Melissa A. Petruska ,  Edward A. Sturm ,  Shaun M. Wilson ,  Steven M. Lurcott ,  Bryan C. Hendrix ,  Joseph D. Sweeney ,  Michael J. Wodjenski ,  Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Matthew Thomas Marlow ,  Christopher Scannell ,  Daniel Elzer ,  Kavita Murthi

IPC: B01J20/10 ,  B01J20/28 ,  B01J20/22 ,  B01J20/20 ,  H01L21/67 ,  F17C11/00

Abstract: Adsorbents of varying types and forms are described, as usefully employed in gas supply packages that include a gas storage and dispensing vessel holding such adsorbent for storage of sorbate gas thereon, and a gas dispensing assembly secured to the vessel for discharging the sorbate gas from the gas supply package under dispensing conditions thereof. Corresponding gas supply packages are likewise described, and various methods of processing the adsorbent, and manufacturing the gas supply packages.

公开(公告)号：US10109488B2

公开(公告)日：2018-10-23

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01J37/00 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01J37/244 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US09764298B2

公开(公告)日：2017-09-19

申请号：US14940278

申请日：2015-11-13

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

IPC: B01J8/00 ,  B01J8/02 ,  B01J8/04 ,  C01B35/00 ,  C01B35/06

CPC classification number: B01J8/0285 ,  B01J8/0465 ,  B01J2208/00017 ,  B01J2208/00389 ,  B01J2208/00433 ,  B01J2208/00539 ,  C01B35/061

Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

公开(公告)号：US20240136145A1

公开(公告)日：2024-04-25

申请号：US18536031

申请日：2023-12-11

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joe R. Despres ,  Joseph D. Sweeney ,  Oleg Byl ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/32532 ,  H01J37/3171 ,  H01J2237/31701

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

公开(公告)号：US11881376B2

公开(公告)日：2024-01-23

申请号：US17492089

申请日：2021-10-01

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Joe R. Despres ,  Joseph D. Sweeney ,  Oleg Byl ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/32532 ,  H01J37/3171 ,  H01J2237/31701

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

公开(公告)号：US20220194804A1

公开(公告)日：2022-06-23

申请号：US17550740

申请日：2021-12-14

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Diego Troya ,  Nathan B. Jones ,  John R. Morris

IPC: C01B35/02 ,  B01J20/10 ,  B01J20/34 ,  C01B33/12 ,  F17C11/00 ,  B01D53/04

Abstract: Described are gas storage medium and methods of storing source gases in the gas storage medium, particularly relating to using hydroxylated metal oxides or hydroxylated metalloid oxides as a storage medium for storing diborane.