-
公开(公告)号：US20180277684A1
公开(公告)日：2018-09-27
申请号：US15994097
申请日：2018-05-31
Inventor： Kyoung Ik CHO , Jae Bon KOO , Chan Woo PARK , Bock Soon NA , Sang Seok LEE , Sang Chul LIM , Soon-Won JUNG , Hye Yong CHU
IPC: H01L29/786 , H01L27/12 , H01L21/311 , H01L21/3105 , H01L29/66
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
-
公开(公告)号：US20150349136A1
公开(公告)日：2015-12-03
申请号：US14611142
申请日：2015-01-30
Inventor： Jae Bon KOO , Chan Woo PARK , Soon-Won JUNG , Bock Soon NA , Sang Chul LIM , Sang Seok LEE , Kyoung Ik CHO , Hye Yong CHU
IPC: H01L29/786 , H01L21/428 , H01L21/02 , H01L29/66
CPC classification number: H01L29/78603 , H01L21/428 , H01L21/7813 , H01L27/1218 , H01L27/124 , H01L27/1248 , H01L27/1266 , H01L27/1292 , H01L29/66969 , H01L29/7869
Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured. Furthermore, since the thin-film transistor is protected by the device protection element, the deformation of semiconductor devices under flexibility conditions may be prevented, thereby improving the reliability of the semiconductor devices.
Abstract translation: 根据本发明的实施例的制造半导体器件的方法可以包括提供包括布线区域和器件区域的牺牲衬底，在牺牲衬底上依次形成牺牲层和缓冲层，在缓冲器上形成薄膜晶体管 在器件区域内形成围绕薄膜晶体管的器件保护元件，在缓冲层上形成柔性衬底，并通过去除牺牲层来分离牺牲衬底来暴露缓冲层的表面。 由于可以直接使用典型的半导体工艺技术，因此可以提高工艺兼容性，并且可以制造具有高分辨率和高性能的半导体器件。 此外，由于薄膜晶体管被器件保护元件保护，所以可以防止半导体器件在柔性条件下的变形，从而提高半导体器件的可靠性。
-
公开(公告)号：US20150171354A1
公开(公告)日：2015-06-18
申请号：US14280578
申请日：2014-05-17
Inventor： Sang Seok LEE , Kyoung Ik CHO , Bock Soon NA , Sang Chul LIM , Chan Woo PARK , Soon-Won JUNG , Jae Bon KOO , Hye Yong CHU
CPC classification number: H01L27/3244 , H01L51/003 , H01L51/0094 , H01L51/0097 , H01L51/56 , Y02E10/549
Abstract: Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.
Abstract translation: 提供一种制造柔性显示装置的方法。 该方法包括将形状记忆合金膜在高于形状记忆温度的温度下将其形状记忆温度保持为形状记忆温度以下的形状记忆合金薄膜，形成柔性基板，在柔性基板上形成显示装置， 形状记忆合金到弯曲形状，以从柔性基底去除形状记忆合金膜。
-
公开(公告)号：US20140085840A1
公开(公告)日：2014-03-27
申请号：US13772288
申请日：2013-02-20
Inventor： Chan Woo PARK , Jae Bon KOO , Sang Chul LIM , Ji-Young OH , Soon-Won JUNG
CPC classification number: H05K3/10 , H05K1/0283 , H05K1/0287 , H05K1/181 , H05K3/0014 , H05K3/284
Abstract: Provided is an electronic circuit including a substrate having a flat device region and a curved interconnection region. A conduction line may extend along an uneven portion in the interconnection region and may be curved. The uneven portion and the conductive line may have a wavy shape. An external force applied to the electronic circuit may be absorbed by the uneven portion and the conductive line. The electronic device may not be affected by the external force. Therefore, functions of the electronic circuit may be maintained. A method of fabricating an electronic circuit according to the present invention may easily adjust areas and positions of the interconnection region and the device region.
Abstract translation: 提供一种电子电路，其包括具有平坦器件区域和弯曲互连区域的衬底。 导线可以沿着互连区域中的不平坦部分延伸并且可以是弯曲的。 不平坦部分和导电线可以具有波浪形状。 施加到电子电路的外力可能被不平坦部分和导电线吸收。 电子设备可能不受外力的影响。 因此，可以保持电子电路的功能。 根据本发明的制造电子电路的方法可以容易地调整互连区域和器件区域的面积和位置。
-
公开(公告)号：US20140077297A1
公开(公告)日：2014-03-20
申请号：US13772236
申请日：2013-02-20
Inventor： Jae Bon KOO , Soon-Won JUNG , Bock Soon NA , Chan Woo PARK , Sang Chul LIM , Ji-Young OH , Hye Yong CHU
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/78603 , H01L29/41733 , H01L29/66742 , H01L29/786 , H01L29/78636 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0076 , H01L51/0097 , H01L51/0541 , H01L51/0545 , H01L51/102
Abstract: Provided is a thin film transistor. The thin film transistor according to an embodiment of the present invention may include a source electrode and a drain electrode buried in a first flexible substrate, a semiconductor layer disposed on the first flexible substrate to be positioned between the source electrode and the drain electrode, a gate insulating layer completely cover the semiconductor layer, and a gate electrode facing the semiconductor layer on the gate insulating layer.
Abstract translation: 提供一种薄膜晶体管。 根据本发明实施例的薄膜晶体管可以包括埋入第一柔性衬底中的源电极和漏电极，设置在第一柔性衬底上以定位在源电极和漏电极之间的半导体层， 栅极绝缘层完全覆盖半导体层，并且栅极电极面对栅极绝缘层上的半导体层。
-
Patent Agency Ranking
公开(公告)号：US20230091070A1
公开(公告)日：2023-03-23
申请号：US17889204
申请日：2022-08-16
Inventor： Ji Hun CHOI , Chan Woo PARK , Ji-Young OH , Seung Youl KANG , Yong Hae KIM , Hee-ok KIM , Jeho NA , Jaehyun MOON , Jong-Heon YANG , Himchan OH , Seong-Mok CHO , Sung Haeng CHO , Jae-Eun PI , Chi-Sun HWANG
IPC: H01B7/06 , H01B3/30 , H01B13/008 , H05K7/06
Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.
-
公开(公告)号：US20200321403A1
公开(公告)日：2020-10-08
申请号：US16842396
申请日：2020-04-07
Inventor： Ji-Young OH , Seung Youl KANG , Seongdeok AHN , Jeong Ik LEE , Chi-Sun HWANG , Byoung-Hwa KWON , Tae-Youb KIM , Jeho NA , Sooji NAM , Jaehyun MOON , Young Sam PARK , Chan Woo PARK , Doo-Hee CHO , Chul Woong JOO , Jae-Eun PI
Abstract: Provided is a pressure sensitive display device including a sensing substrate, a reaction substrate provided on the sensing substrate, and spacers provided between the sensing substrate and the reaction substrate to space the sensing substrate apart from the reaction substrate. Here, the sensing substrate includes a flexible substrate and a touch electrode provided on one surface of the flexible substrate, which faces the reaction substrate. The reaction substrate includes a transparent substrate, a transparent electrode provided on one surface of the transparent substrate, which faces the sensing substrate, and a light emitting layer disposed on the transparent electrode.
-
公开(公告)号：US20170186876A1
公开(公告)日：2017-06-29
申请号：US15461567
申请日：2017-03-17
Inventor： Kyoung Ik CHO , Jae Bon KOO , Chan Woo PARK , Bock Soon NA , Sang Seok LEE , Sang Chul LIM , Soon-Won JUNG , Hye Yong CHU
IPC: H01L29/786 , H01L21/311 , H01L29/66
CPC classification number: H01L29/78603 , H01L21/3105 , H01L21/31058 , H01L21/31144 , H01L27/1218 , H01L27/1266 , H01L29/66742
Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.
-
19.发明申请公开(公告)号：US20170053894A1
公开(公告)日：2017-02-23
申请号：US15220145
申请日：2016-07-26
Inventor： Chan Woo PARK , Jae Bon KOO , Bock Soon NA , Rae-Man PARK , Ji-Young OH , Sang Seok LEE , Soon-Won JUNG
IPC: H01L23/00
CPC classification number: H01L24/43 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L2221/6835 , H01L2224/24137 , H01L2924/00014 , H01L2224/45099
Abstract: Provided is a method for manufacturing a stretchable wire, the method including removing a portion of a photoresist layer on a substrate to form a photoresist pattern comprising at least one pattern slit, applying a liquid-phase conductive material on the photoresist pattern to form a liquid-phase conductive structure in the pattern slit, forming a stretchable first insulating layer on the liquid-phase conductive structure, after removing the photoresist pattern, and separating the liquid-phase conductive structure and the first insulating layer from the substrate.
Abstract translation: 本发明提供一种拉伸线的制造方法，其特征在于，除去基板上的光致抗蚀剂层的一部分，形成包含至少一个图案狭缝的光致抗蚀剂图案，在所述光致抗蚀剂图案上涂布液相导电材料，形成液体 在导电结构上形成可拉伸的第一绝缘层，去除光致抗蚀剂图案，并将液相导电结构和第一绝缘层与基片分开。
-
公开(公告)号：US20160246151A1
公开(公告)日：2016-08-25
申请号：US15007844
申请日：2016-01-27
Inventor： Ji-Young OH , Jae Bon KOO , Joo Yeon KIM , Bock Soon NA , Chan Woo PARK , Sang Seok LEE , Soon-Won JUNG , Seong-Mok CHO , Hye Yong CHU
IPC: G02F1/155
CPC classification number: G02F1/155 , G02F2001/1519
Abstract: Provided is a color changeable device which includes a first substrate and a second substrate that are spaced apart from each other, a first transparent electrode disposed on the first substrate, a second transparent electrode disposed on the second substrate, an electrochromic layer disposed between the first transparent electrode and the second transparent electrode, an organic layer disposed between the first transparent electrode and the electrochromic layer. The organic layer may include a hole injection layer or an electron injection layer. The organic layer may further include a hole transport layer or an electron transport layer.
Abstract translation: 提供了一种可变色装置，其包括彼此间隔开的第一基板和第二基板，设置在第一基板上的第一透明电极，设置在第二基板上的第二透明电极，设置在第一基板之间的电致变色层 透明电极和第二透明电极，设置在第一透明电极和电致变色层之间的有机层。 有机层可以包括空穴注入层或电子注入层。 有机层还可以包括空穴传输层或电子传输层。
-
-
-
-
-
-
-
-
-
Search Results
43
records
(took 0.015 seconds)
