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    Data access arrangement
    11.
    发明授权
    Data access arrangement 失效
    数据访问安排

    公开(公告)号：US5717752A

    公开(公告)日：1998-02-10

    申请号：US497581

    申请日：1995-06-30

    Applicant: David Whitney

    Inventor： David Whitney

    IPC: H04M11/00 ,  H04M11/06 ,  H04M9/00

    CPC classification number: H04M11/06

    Abstract: A digital access arrangement, coupled between a data terminal equipment having a transmit line and a receive line and tip and ring lines of a network, having a circuit that provides polarity check, hook/switch control, and data modulation functionality. The circuit includes a controller and six controllable switches, each having a conducting state and a blocking state.

    Abstract translation: 耦合在具有发送线路的数据终端设备和具有提供极性检查，挂钩/开关控制和数据调制功能的电路的具有发送线路的数据终端设备和网络的尖端和环形线路之间的数字接入装置。 该电路包括一个控制器和六个可控开关，每个具有导通状态和阻塞状态。

    Silicon controlled rectifier with a variable base-shunt resistant
    12.
    发明授权
    Silicon controlled rectifier with a variable base-shunt resistant 失效
    具有可变基极分流电阻的可控硅整流器

    公开(公告)号：US5446295A

    公开(公告)日：1995-08-29

    申请号：US110608

    申请日：1993-08-23

    Applicant: David Whitney

    Inventor： David Whitney

    IPC: H01L31/111 ,  H01L29/74

    CPC classification number: H01L31/1113 ,  Y10S148/136

    Abstract: An optically triggered silicon controlled rectifier (SCR) circuit (20) has a number of semiconductor layers diffused into an N- substrate (21). The layers form an SCR (50) having a P+ anode region (25), a P+ gate region (24), and an N+ cathode region (27). An adjustable base-shunt resistance, in the form of a P- channel depletion mode MOSFET (Q3), connects between the SCR gate region and the cathode region. The MOSFET includes a MOSFET gate region (35), a P+ drain region (24), a P-- channel (26), and a P+ source region (23). The substrate also accommodates a PN photodiode (22, D1) which connects to the MOSFET gate region for switching the MOSFET on and off in response to incident optical radiation (L) thereon. The SCR gate region also comprises photosensitive material. When sufficient optical radiation illuminates the photodiode and the SCR gate region, the MOSFET is turned off and the SCR is triggered, permitting anode-to-cathode current to flow. When insufficient optical radiation is present, the MOSFET is turned on and provides a low-resistance shunt path which prevents the SCR gate region from triggering the SCR.

    Abstract translation: 光触发可控硅整流器（SCR）电路（20）具有扩散到N基板（21）中的多个半导体层。 这些层形成具有P +阳极区域（25），P +栅极区域（24）和N +阴极区域（27）的SCR（50）。 以P沟道耗尽型MOSFET（Q3）的形式的可调节分路电阻连接在SCR栅极区域和阴极区域之间。 MOSFET包括MOSFET栅极区域（35），P +漏极区域（24），P沟道（26）和P +源极区域（23）。 衬底还容纳连接到MOSFET栅极区域的PN光电二极管（22，D1），用于响应于其上的入射光辐射（L）而开启和关闭MOSFET。 SCR栅极区域还包括感光材料。 当足够的光辐射照射光电二极管和SCR栅极区域时，MOSFET被关断，SCR被触发，允许阳极到阴极的电流流动。 当存在不足的光辐射时，MOSFET导通，并提供低阻分流路径，防止SCR栅极区域触发SCR。

    ENERGY MONITORING CURRENT TRANSFORMER ENCLOSURE
    15.
    发明申请
    ENERGY MONITORING CURRENT TRANSFORMER ENCLOSURE 有权
    能量监测电流互感器外壳

    公开(公告)号：US20170045556A1

    公开(公告)日：2017-02-16

    申请号：US14827306

    申请日：2015-08-15

    Applicant: Liang Light Chen ,  David Whitney

    Inventor： Liang Light Chen ,  David Whitney

    IPC: G01R19/25 ,  H01F27/02 ,  H01F27/40 ,  H01F27/24 ,  H01F27/28

    CPC classification number: G01R19/2513 ,  H01F27/02 ,  H01F27/04

    Abstract: An enclosure for an energy monitoring current transformer includes upper housing that houses an upper transformer core section. Lower housing houses a transformer coil and a lower transformer core section. When the enclosure is assembled there is an overlap between the cap for the lower housing and the lower housing that lengthens a creepage path from the upper transformer core to the external surface of the enclosure.

    Abstract translation: 用于能量监测电流互感器的外壳包括容纳上变压器铁芯部分的上壳体。 下部住房设有变压器线圈和下部变压器铁芯部分。 当外壳组装时，用于下壳体的盖与下壳体之间存在重叠，从而使从上变压器芯到外壳的外表面的爬电路径延长。

    Method of fabricating a semiconductor device
    17.
    发明授权
    Method of fabricating a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5750414A

    公开(公告)日：1998-05-12

    申请号：US329796

    申请日：1994-10-26

    Applicant: David Whitney

    Inventor： David Whitney

    IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01R21/22

    CPC classification number: H01L29/402 ,  H01L29/0615 ,  H01L29/7813 ,  H01L29/8611 ,  Y10S438/965

    Abstract: An integrated circuit (IC) (20) is formed on a semiconductor substrate (21). The IC has a PN junction (28) and a graded junction termination (27). A reverse field plate (31) is mounted adjacent the junction termination. One end of the field plate is mounted on and electrically connected to the substrate; the remainder of the field plate extends over a passivating oxide layer (30) which covers the substrate surface (29) adjacent the junction termination. The field plate provides a common potential surface which maintains a fixed potential on the substrate surface at the junction termination.

    Abstract translation: 集成电路（IC）（20）形成在半导体衬底（21）上。 IC具有PN结（28）和渐变连接端（27）。 邻接连接终端安装反向场板（31）。 场板的一端安装在基板上并电连接到基板上; 场板的其余部分在覆盖邻接连接终端的衬底表面（29）的钝化氧化物层（30）上延伸。 场板提供共同的电位表面，其在连接终端处在衬底表面上保持固定电位。

    Method of fabricating a high-voltage, vertical-trench semiconductor device
    18.
    发明授权
    Method of fabricating a high-voltage, vertical-trench semiconductor device 失效
    制造高压垂直沟槽半导体器件的方法

    公开(公告)号：US5445974A

    公开(公告)日：1995-08-29

    申请号：US120147

    申请日：1993-09-10

    Applicant: David Whitney

    Inventor： David Whitney

    IPC: H01L29/74 ,  H01L29/739 ,  H01L29/78 ,  H01L29/86 ,  H01L29/87 ,  H01L31/111 ,  H01L49/00 ,  H01L21/461

    CPC classification number: H01L29/87 ,  H01L24/32 ,  H01L29/86 ,  H01L31/1113 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2924/10155 ,  H01L2924/10158 ,  H01L2924/13034 ,  H01L2924/1306 ,  H01L2924/14

    Abstract: An optically-triggered silicon controlled rectifier (SCR) (21) having a number of semiconductor layers (23, 24, 31) diffused into an N type substrate (22). Specifically, the SCR is formed by diffusing a first P+ layer (23) into an upper surface of the substrate. Then, an N+ layer (24) is diffused into a portion of an upper surface of the first P+ layer. An oxide layer (25) which is permeable to optical radiation is formed on the first P+ layer. A conductive cathode terminal (26) is then deposited on the N+ layer. Therefore, a trench (30) is etched in the lower surface of the substrate. The trench is defined by a depth and a surface. A second P+ layer (31) is diffused into the surface of the trench. The depth of the trench substantially defines a spacing between the first and second P+ layers. The chip is soldered onto a pedestal (33) formed on a lead frame (34). The solder is deposited in the trench and contacts the second P+ layer to form an anode terminal (36). The pedestal may be formed by either etching or stamping a depression (35) in the lead frame.

    Abstract translation: 具有漫射到N型衬底（22）中的多个半导体层（23,24,31）的光触发可控硅整流器（SCR）（21）。 具体地说，通过将第一P +层（23）扩散到衬底的上表面中形成SCR。 然后，N +层（24）扩散到第一P +层的上表面的一部分。 在第一P +层上形成可透光的氧化物层（25）。 然后将导电阴极端子（26）沉积在N +层上。 因此，在衬底的下表面中蚀刻沟槽（30）。 沟槽由深度和表面限定。 第二P +层（31）扩散到沟槽的表面。 沟槽的深度基本上限定了第一和第二P +层之间的间隔。 芯片被焊接到形成在引线框架（34）上的基座（33）上。 焊料沉积在沟槽中并与第二P +层接触以形成阳极端子（36）。 基座可以通过蚀刻或冲压引线框架中的凹陷（35）来形成。

    Extended message rule architecture
    19.
    发明申请
    Extended message rule architecture 有权
    扩展消息规则体系结构

    公开(公告)号：US20060031311A1

    公开(公告)日：2006-02-09

    申请号：US10852018

    申请日：2004-05-24

    Applicant: David Whitney ,  Nicolae Surpatanu

    Inventor： David Whitney ,  Nicolae Surpatanu

    IPC: G06F15/16

    CPC classification number: H04L51/12 ,  G06Q10/107

    Abstract: Embodiments provide for extending the architecture of a legacy messaging system that otherwise communicates message rules to a client as rows in a rule table. Due to architectural limitations of some messaging systems, rules larger than a specified size are prevented from being streamed between a server and a client. Example embodiments provides for extended rules that represent a combination of conditions, actions or exceptions to be performed on messages and are created by a client as message objects. Because they are created by a client as message objects, rather than rows on a table, the extended rules are allowed to be streamed between the client and server, thus extending the architecture of a legacy messaging system. The client also sets a property value on the message object created, thereby allowing the server to identify the message object as including the extended rule. The system, however, still supports legacy clients.

    Abstract translation: 实施例提供了将传统消息传递系统的架构扩展为另外将消息规则传送到客户端作为规则表中的行。 由于某些消息传递系统的架构限制，防止大于指定大小的规则在服务器和客户端之间流式传输。 示例性实施例提供了表示要对消息执行并由客户端创建为消息对象的条件，动作或异常的组合的扩展规则。 因为它们是由客户端创建的，而不是表上的行，而是扩展的规则被允许在客户端和服务器之间流式传输，从而扩展了传统消息系统的体系结构。 客户端还会在创建的消息对象上设置属性值，从而允许服务器将消息对象标识为包含扩展规则。 然而，该系统仍然支持传统客户端。

    Data access arrangement having improved transmit-receive separation
    20.
    发明授权
    Data access arrangement having improved transmit-receive separation 失效
    具有改进的发射 - 接收间隔的数据存取装置

    公开(公告)号：US06282001B1

    公开(公告)日：2001-08-28

    申请号：US08888856

    申请日：1997-07-07

    Applicant: David Whitney

    Inventor： David Whitney

    IPC: H04B1000

    CPC classification number: H04M11/06 ,  H04B1/587 ,  H04L25/0266 ,  H04M1/738

    Abstract: A data access arrangement (DAA) having a transhybrid circuit for separating a transmit signal from a received signal by providing a transmit cancellation signal to the inverting input of a servo-feedback differential amplifier on the receive channel of the DAA. The cancellation signal is provided by a photodiode optically coupleable with a light emitting diode within a optical isolator on the transmission channel of the DAA. The gain of the cancellation signal can be independently controlled.

    Abstract translation: 一种具有跨混合电路的数据访问装置（DAA），用于通过向DAA的接收信道上的伺服反馈差分放大器的反相输入提供发送消除信号来分离发射信号与接收信号。 消除信号由在DAA的传输通道上的光隔离器内与发光二极管光学耦合的光电二极管提供。 可以独立地控制消除信号的增益。

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