Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US329796Application Date: 1994-10-26
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Publication No.: US5750414APublication Date: 1998-05-12
- Inventor: David Whitney
- Applicant: David Whitney
- Applicant Address: NJ Iselin
- Assignee: Siemens Components, Inc.
- Current Assignee: Siemens Components, Inc.
- Current Assignee Address: NJ Iselin
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/40 ; H01L29/78 ; H01R21/22
Abstract:
An integrated circuit (IC) (20) is formed on a semiconductor substrate (21). The IC has a PN junction (28) and a graded junction termination (27). A reverse field plate (31) is mounted adjacent the junction termination. One end of the field plate is mounted on and electrically connected to the substrate; the remainder of the field plate extends over a passivating oxide layer (30) which covers the substrate surface (29) adjacent the junction termination. The field plate provides a common potential surface which maintains a fixed potential on the substrate surface at the junction termination.
Public/Granted literature
- US4960989A Optical time domain reflectometer having a receiver with selectively controlled gain Public/Granted day:1990-10-02
Information query
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