-
公开(公告)号：US20200183198A1
公开(公告)日：2020-06-11
申请号：US16789317
申请日：2020-02-12
Applicant: Cisco Technology, Inc.
Inventor： Donald ADAMS , Prakash B. GOTHOSKAR , Vipulkumar PATEL , Mark WEBSTER
Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
-
Patent Agency Ranking
公开(公告)号：US20200088946A1
公开(公告)日：2020-03-19
申请号：US16690574
申请日：2019-11-21
Applicant: Cisco Technology, Inc.
Inventor： Mark WEBSTER , Ravi Sekhar TUMMIDI
Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.
-
公开(公告)号：US20190319427A1
公开(公告)日：2019-10-17
申请号：US16436573
申请日：2019-06-10
Applicant: Cisco Technology, Inc.
Inventor： Matthew J. TRAVERSO , Dominic F. SIRIANI , Mark WEBSTER
Abstract: The embodiments herein describe a single-frequency laser source (e.g., a distributed feedback (DFB) laser or distributed Bragg reflector (DBR) laser) that includes a feedback grating or mirror that extends along a waveguide. The grating may be disposed over a portion of the waveguide in an optical gain region in the laser source. Instead of the waveguide or cavity being linear, the laser includes a U-turn region so that two ends of the waveguide terminate at the same facet. That facet is coated with an anti-reflective (AR) coating.
-
公开(公告)号：US20170269393A1
公开(公告)日：2017-09-21
申请号：US15615290
申请日：2017-06-06
Applicant: Cisco Technology, Inc.
Inventor： Donald ADAMS , Prakash B. GOTHOSKAR , Vipulkumar PATEL , Mark WEBSTER
Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.
-
公开(公告)号：US20170192174A1
公开(公告)日：2017-07-06
申请号：US15461789
申请日：2017-03-17
Applicant: Cisco Technology, Inc.
Inventor： Mark WEBSTER , Ravi Sekhar TUMMIDI
CPC classification number: G02B6/30 , G02B6/107 , G02B6/12 , G02B6/12002 , G02B6/122 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/43 , G02B2006/12038 , G02B2006/12061 , G02B2006/121 , G02B2006/12147 , G02B2006/12152
Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.
-
公开(公告)号：US20160077283A1
公开(公告)日：2016-03-17
申请号：US14946946
申请日：2015-11-20
Applicant: Cisco Technology, Inc.
Inventor： Mark WEBSTER , Ravi Sekhar TUMMIDI
CPC classification number: G02B6/30 , G02B6/107 , G02B6/12 , G02B6/12002 , G02B6/122 , G02B6/1228 , G02B6/132 , G02B6/14 , G02B6/305 , G02B6/43 , G02B2006/12038 , G02B2006/12061 , G02B2006/121 , G02B2006/12147 , G02B2006/12152
Abstract: A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.
-
-
-
-
-
Search Results
16
records
(took 0.018 seconds)
