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    OPTICAL MODULATOR
    1.
    发明申请
    OPTICAL MODULATOR 审中-公开

    公开(公告)号：US20200301176A1

    公开(公告)日：2020-09-24

    申请号：US16356982

    申请日：2019-03-18

    Applicant: Cisco Technology, Inc.

    Inventor： Xunyuan ZHANG ,  Vipulkumar K. PATEL ,  Prakash B. GOTHOSKAR ,  Ming Gai Stanley LO

    IPC: G02F1/025

    Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

    ELECTRO-OPTICAL MODULATOR USING WAVEGUIDES WITH OVERLAPPING RIDGES
    2.
    发明公开
    ELECTRO-OPTICAL MODULATOR USING WAVEGUIDES WITH OVERLAPPING RIDGES 审中-公开

    公开(公告)号：US20240094567A1

    公开(公告)日：2024-03-21

    申请号：US18526985

    申请日：2023-12-01

    Applicant: Cisco Technology, Inc.

    Inventor： Donald J. ADAMS ,  Prakash B. GOTHOSKAR ,  Vipulkumar J. PATEL ,  Mark J. WEBSTER

    IPC: G02F1/025 ,  G02B6/132 ,  G02B6/136 ,  G02F1/01 ,  G02F1/225

    CPC classification number: G02F1/025 ,  G02B6/132 ,  G02B6/136 ,  G02F1/011 ,  G02F1/2257 ,  G02F1/0152

    Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

    INTEGRATE STRESSOR WITH GE PHOTODIODE USING A SUBSTRATE REMOVAL PROCESS
    3.
    发明申请
    INTEGRATE STRESSOR WITH GE PHOTODIODE USING A SUBSTRATE REMOVAL PROCESS 有权

    公开(公告)号：US20220165907A1

    公开(公告)日：2022-05-26

    申请号：US17103792

    申请日：2020-11-24

    Applicant: Cisco Technology, Inc.

    Inventor： Xunyuan ZHANG ,  Li LI ,  Prakash B. GOTHOSKAR ,  Soha NAMNABAT

    IPC: H01L31/18 ,  H01L31/105 ,  H01L31/0368

    Abstract: The embodiments of the present disclosure describe a stressed Ge PD and fabrications techniques for making the same. In one embodiment, a stressor material is deposited underneath an already formed Ge PD. To do so, wafer bonding can be used to bond the wafer containing the Ge PD to a second, handler wafer. Doing so provides support to remove the substrate of the wafer so that a stressor material (e.g., silicon nitride, diamond-like carbon, or silicon-germanium) can be disposed underneath the Ge PD. The stress material induces a stress or strain in the crystal lattice of the Ge which changes its bandgap and improves its responsivity.

    FABRICATION-TOLERANT ON-CHIP MULTIPLEXERS AND DEMULTIPLEXERS
    5.
    发明申请
    FABRICATION-TOLERANT ON-CHIP MULTIPLEXERS AND DEMULTIPLEXERS 有权

    公开(公告)号：US20240393530A1

    公开(公告)日：2024-11-28

    申请号：US18791228

    申请日：2024-07-31

    Applicant: Cisco Technology, Inc.

    Inventor： Yi Ho LEE ,  Tao LING ,  Ravi S. TUMMIDI ,  Mark A. WEBSTER ,  Prakash B. GOTHOSKAR

    IPC: G02B6/12 ,  G02B6/293 ,  H04L1/00

    Abstract: Fabrication-tolerant on-chip multiplexers and demultiplexers are provides via a lattice filter interleaver configured to receive an input signal including a plurality of individual signals and to produce a first interleaved signal with a first subset of the plurality of individual signals and a second interleaved signal with a second subset of the plurality of individual signals; a first Bragg interleaver configured to receive the first interleaved signal and produce a first output signal including a first individual signal of the plurality of individual signals and a second output signal including a second individual signal of the plurality of individual signals; and a second Bragg interleaver configured to receive the second interleaved signal and produce a third output signal including a third individual signal of the plurality of individual signals and a fourth output signal including a fourth individual signal of the plurality of individual signals.

    OPTICAL MODULATOR USING MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON
    7.
    发明申请
    OPTICAL MODULATOR USING MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON 有权

    公开(公告)号：US20210263351A1

    公开(公告)日：2021-08-26

    申请号：US17302632

    申请日：2021-05-07

    Applicant: Cisco Technology, Inc.

    Inventor： Xunyuan ZHANG ,  Vipulkumar K. PATEL ,  Prakash B. GOTHOSKAR ,  Ming Gai Stanley LO

    IPC: G02F1/025

    Abstract: Embodiments provide for an optical modulator, comprising: a lower guide, comprising: a lower hub, made of monocrystalline silicon; and a lower ridge, made of monocrystalline silicon that extends in a first direction from the lower hub; an upper guide, including: an upper hub; and an upper ridge, made of monocrystalline silicon that extends in a second direction, opposite of the first direction, from the upper hub and is aligned with the lower ridge; and a gate oxide layer separating the lower ridge from the upper ridge and defining a waveguide region with the lower guide and the upper guide.

    ELECTRO-OPTIC MODULATOR WITH MONOCRYSTALLINE SEMICONDUCTOR WAVEGUIDES
    9.
    发明申请
    ELECTRO-OPTIC MODULATOR WITH MONOCRYSTALLINE SEMICONDUCTOR WAVEGUIDES 审中-公开

    公开(公告)号：US20200158949A1

    公开(公告)日：2020-05-21

    申请号：US16198251

    申请日：2018-11-21

    Applicant: Cisco Technology, Inc.

    Inventor： Xunyuan ZHANG ,  Vipulkumar K. PATEL ,  Prakash B. GOTHOSKAR

    IPC: G02B6/122 ,  G02B6/136

    Abstract: A method of fabricating an optical apparatus comprises forming a first waveguide on a dielectric substrate. The first waveguide extends in a direction of an optical path. The first waveguide comprises a monocrystalline semiconductor material and is doped with a first conductivity type. The method further comprises depositing a first dielectric layer on the first waveguide, etching a first opening that extends at least partly through the first dielectric layer, and forming a second waveguide at least partly overlapping the first waveguide along the direction. The second waveguide is doped with a different, second conductivity type. Forming the second waveguide comprises depositing a monocrystalline semiconductor material on the first dielectric layer, whereby the first opening is filled with the deposited monocrystalline semiconductor material.

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