公开(公告)号：US11322465B2

公开(公告)日：2022-05-03

申请号：US16897036

申请日：2020-06-09

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Kathryn R. Holland ,  Marc L. Tarabbia ,  Yaoyu Pang ,  Alexander Barr

IPC: H01L23/00

Abstract: A method may include forming a metal pattern in a metal layer of a fabricated integrated circuit device and under a target bump of the fabricated integrated circuit device, wherein the metal pattern has an inner shape and an outer field such that a void space in the metal layer is created between the inner shape and the outer field and approximately centering the void space on an outline of an under-bump metal formed under the target bump with a keepout distance from the inner shape and the outer field on either side of the outline such that the metal minimizes local variations in mechanical stress on underlying structures within the fabricated integrated circuit device.

公开(公告)号：US10917052B2

公开(公告)日：2021-02-09

申请号：US16376664

申请日：2019-04-05

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Shanjen Pan ,  Marc L. Tarabbia ,  Christian Larsen

IPC: H03F3/217 ,  H01L27/02 ,  H01L21/8234 ,  H01L29/08 ,  H03F3/185 ,  H03F3/187 ,  H03F3/45 ,  H01L49/02 ,  H01L29/66 ,  H01L29/06 ,  H01L27/088

Abstract: Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.

公开(公告)号：US20190238104A1

公开(公告)日：2019-08-01

申请号：US16376664

申请日：2019-04-05

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Shanjen Pan ,  Marc L. Tarabbia ,  Christian Larsen

IPC: H03F3/185 ,  H01L29/06 ,  H01L29/08 ,  H01L49/02 ,  H01L29/66 ,  H01L21/8234 ,  H03F3/217 ,  H03F3/45 ,  H03F3/187 ,  H01L27/088

CPC classification number: H03F3/185 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/0207 ,  H01L27/088 ,  H01L28/00 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/66659 ,  H03F3/187 ,  H03F3/2171 ,  H03F3/2178 ,  H03F3/45475 ,  H03F2200/03 ,  H03F2200/366

Abstract: Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.

公开(公告)号：US10298184B2

公开(公告)日：2019-05-21

申请号：US15072097

申请日：2016-03-16

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Shanjen Pan ,  Marc L. Tarabbia ,  Christian Larsen

IPC: H03F3/217 ,  H01L27/02 ,  H01L21/8234 ,  H01L29/08 ,  H03F3/185 ,  H01L27/088 ,  H03F3/187 ,  H03F3/45 ,  H01L49/02 ,  H01L29/66 ,  H01L29/06

Abstract: Transistors may be manufactured with a shared drain to reduce die area consumed by circuitry. In one example, two transistors can be manufactured that include two body regions that abut a shared drain region. The two transistors can be independently operated by coupling terminals to a source and a gate for each transistor and the shared drain. Characteristics of the two transistors can be controlled by adjusting feature sizes, such as overlap between the gate and the shared drain for a transistor. In particular, two transistors with different voltage requirements can be manufactured using a shared drain structure, which can be useful in amplifier circuitry and in particular Class-D amplifiers.

公开(公告)号：US10020357B2

公开(公告)日：2018-07-10

申请号：US15094488

申请日：2016-04-08

Applicant: Cirrus Logic International Semiconductor Ltd.

Inventor： Scott Allan Woodford ,  John Christopher Tucker ,  Marc L. Tarabbia

IPC: H01L23/52 ,  H01L49/02 ,  H01L27/06 ,  H01L29/06 ,  H01L23/522

CPC classification number: H01L28/24 ,  H01L23/5228 ,  H01L27/0629 ,  H01L29/0657

Abstract: An integrated sense resistor within an integrated circuit (IC) may be surroundingly positioned near and coupled to a connection such as a pin or ball. The integrated sense resistor may be shaped such that more surface area of the integrated sense resistor is coupled to be positioned closer or in actual contact with the pin or ball than conventional straight layered integrated sense resistor solutions. The integrated sense resistor may be a non-straight shape that entirely surrounds or wraps around a connection to the pin or ball, such as a circular or oval shape, a box or rectangular shape, a triangular shape, or a polygonal shape. The integrated sense resistor may be a non-straight shape that partially surrounds a connection to the pin or ball, such as an open-circular or semi-circular shape, an open-sided box or rectangular shape, an open-sided triangular shape, an angular shape, or an open curved shape.