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公开(公告)号：US12261179B2
公开(公告)日：2025-03-25
申请号：US17898761
申请日：2022-08-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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公开(公告)号：US11622490B2
公开(公告)日：2023-04-04
申请号：US17346539
申请日：2021-06-14
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H10K59/122 , H10K50/81 , H10K71/00 , H10K77/10 , H10K59/12 , H10K102/00
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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公开(公告)号：US11367792B2
公开(公告)日：2022-06-21
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L21/00 , H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66 , H01L27/32
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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公开(公告)号：US11329115B2
公开(公告)日：2022-05-10
申请号：US16620653
申请日：2019-03-22
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Yang Zhang
IPC: H01L27/32 , H01L51/00 , H01L51/56 , H01L29/417 , H01L29/786
Abstract: The present disclosure relates to a pixel structure. The pixel structure may include a base substrate; a first insulating island on a side of the base substrate; a first electrode on a side of the first insulating island opposite front the base substrate; a second electrode on the base substrate and at a peripheral area of the first insulating island; an active layer electrically connected to the first electrode and the second electrode; a second insulating layer on a side of the active layer opposite from the base substrate; a gate electrode on a side of the second insulating layer opposite from the base substrate; and a third insulating layer on a side of the gate electrode opposite from the base substrate.
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公开(公告)号：US20210265392A1
公开(公告)日：2021-08-26
申请号：US17054823
申请日：2020-04-16
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Yingbin Hu , Qinghe Wang , Wei Li , Liusong Ni
IPC: H01L27/12 , H01L29/24 , H01L29/786 , H01L21/02 , H01L29/66
Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
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Patent Agency Ranking
公开(公告)号：US11081501B2
公开(公告)日：2021-08-03
申请号：US16395660
申请日：2019-04-26
Inventor： Wei Song , Ce Zhao , Bin Zhou , Dongfang Wang , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
IPC: H01L29/786 , H01L27/12 , H01L21/3213 , H01L29/40 , H01L29/66 , H01L21/02 , H01L21/473 , H01L21/44 , H01L29/417
Abstract: A thin film transistor and a method of fabricating the same, an array substrate and a method of fabricating the same, and a display device are provided, the method of fabricating a thin film transistor includes: forming an active layer on a base substrate; forming a metal layer on the active layer; and processing the metal layer to form a source electrode, a drain electrode, and a metal oxide layer, the metal oxide layer covering the source electrode, the drain electrode, and the active layer, the source electrode and the drain electrode being spaced apart and insulated from each other by the metal oxide layer.
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公开(公告)号：US20210135012A1
公开(公告)日：2021-05-06
申请号：US16971085
申请日：2019-11-01
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Heekyu Kim , Yuankui Ding , Leilei Cheng , Yingbin Hu , Wei Li , Guangyao Li , Qinghe Wang
IPC: H01L29/786 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66
Abstract: The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.
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公开(公告)号：US20210018377A1
公开(公告)日：2021-01-21
申请号：US16614788
申请日：2019-05-17
Inventor： Qinghe Wang , Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Leilei Cheng , Yang Zhang , Guangyao Li
Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
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公开(公告)号：US10741787B2
公开(公告)日：2020-08-11
申请号：US16409419
申请日：2019-05-10
Inventor： Tongshang Su , Dongfang Wang , Qinghe Wang , Ce Zhao , Bin Zhou , Liangchen Yan
Abstract: A display back plate, a fabricating method for the same, and a display device are provided. The display back plate includes a substrate, a transparent heat conduction layer disposed on the substrate, and an array structure layer disposed on the heat conduction layer. The array structure layer includes a light shielding layer, a first thin film transistor, and a second thin film transistor, where the light shielding layer is disposed between the transparent heat conduction layer and the first thin film transistor.
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公开(公告)号：US10559601B2
公开(公告)日：2020-02-11
申请号：US15580240
申请日：2017-06-23
Inventor： Tongshang Su , Jun Cheng , Ce Zhao , Bin Zhou , Dongfang Wang , Guangcai Yuan
IPC: H01L27/14 , H01L29/15 , H01L31/036 , H01L27/12 , G02F1/133 , G09G3/3283 , G09G3/3291 , H01L29/417 , H01L51/05 , H01L27/28 , H01L51/10 , H01L27/32
Abstract: The present disclosure relates to an array substrate and a method for manufacturing the same. The array substrate includes a thin film transistor and comprises at least a first region and a second region. A thickness of an active layer of the thin film transistor in the first region is different from that of an active layer of the thin film transistor in the second region. A ratio of the overlapped area between the source electrode or the drain electrode and the active layer of the thin film transistor to the thickness of the active layer is kept uniform over the first region and the second region.
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