BIOSENSOR APPARATUS, METHOD OF FABRICATING BIOSENSOR APPARATUS, BIOSENSOR CHIP, AND METHOD OF DETECTING TARGET MOLECULE

    公开(公告)号:US20210331168A1

    公开(公告)日:2021-10-28

    申请号:US16605776

    申请日:2019-05-06

    Abstract: A biosensor apparatus is provided. The biosensor apparatus includes a base substrate; a first fluid channel layer on the base substrate and having a first fluid channel passing therethrough; a foundation layer on a side of the first fluid channel layer away from the base substrate, a foundation layer throughhole extending through the foundation layer to connect to the first fluid channel; and a micropore layer on a side of the foundation layer away from the base substrate, a micropore extending through the micropore layer to connect to the first fluid channel through the foundation layer throughhole. The micropore layer extends into the foundation layer throughhole and at least partially covers an inner wall of the foundation layer throughhole.

    MICRO-CHANNEL STRUCTURE, SENSOR, MICRO-FLUIDIC DEVICE, LAB-ON-CHIP DEVICE, AND METHOD OF FABRICATING MICRO-CHANNEL STRUCTURE

    公开(公告)号:US20210331167A1

    公开(公告)日:2021-10-28

    申请号:US16475035

    申请日:2018-08-01

    Abstract: The present application provides a micro-channel structure. The micro-channel structure includes a base substrate; a rail layer on the base substrate and including a first rail and a second rail spaced apart from each other; and a wall layer on a side of the rail layer distal to the base substrate, and including a first wall and a second wall at least partially spaced apart from each other, thereby forming a micro-channel between the first wall and the second wall. The micro-channel has an extension direction along a plane substantially parallel to a main surface of the base substrate, the extension direction being substantially parallel to extension directions of the first rail and the second rail along the plane substantially parallel to the main surface of the base substrate.

    Display panel and manufacturing method thereof, driving method and display device

    公开(公告)号:US11092866B2

    公开(公告)日:2021-08-17

    申请号:US16631331

    申请日:2019-07-18

    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.

    MICRO-CHANNEL DEVICE AND MANUFACTURING METHOD THEREOF AND MICRO-FLUIDIC SYSTEM

    公开(公告)号:US20210220824A1

    公开(公告)日:2021-07-22

    申请号:US16755911

    申请日:2019-04-16

    Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.

    ARRAY SUBSTRATE, METHOD FOR MANUFACTURING ARRAY SUBSTRATE, AND DISPLAY PANEL

    公开(公告)号:US20210217784A1

    公开(公告)日:2021-07-15

    申请号:US16761335

    申请日:2019-11-21

    Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.

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