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公开(公告)号:US20210331168A1
公开(公告)日:2021-10-28
申请号:US16605776
申请日:2019-05-06
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xiaochen Ma , Guangcai Yuan , Ce Ning , Xin Gu , Hehe Hu
Abstract: A biosensor apparatus is provided. The biosensor apparatus includes a base substrate; a first fluid channel layer on the base substrate and having a first fluid channel passing therethrough; a foundation layer on a side of the first fluid channel layer away from the base substrate, a foundation layer throughhole extending through the foundation layer to connect to the first fluid channel; and a micropore layer on a side of the foundation layer away from the base substrate, a micropore extending through the micropore layer to connect to the first fluid channel through the foundation layer throughhole. The micropore layer extends into the foundation layer throughhole and at least partially covers an inner wall of the foundation layer throughhole.
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公开(公告)号:US11648558B2
公开(公告)日:2023-05-16
申请号:US16605776
申请日:2019-05-06
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xiaochen Ma , Guangcai Yuan , Ce Ning , Xin Gu , Hehe Hu
IPC: B01L3/00 , G01N27/12 , G01N33/487
CPC classification number: B01L3/502761 , B01L3/502707 , G01N27/128 , B01L2200/0647 , B01L2200/12 , B01L2300/0645 , B01L2300/0864 , B01L2300/0887 , B01L2300/12 , B01L2400/0421 , G01N33/48721
Abstract: A biosensor apparatus is provided. The biosensor apparatus includes a base substrate; a first fluid channel layer on the base substrate and having a first fluid channel passing therethrough; a foundation layer on a side of the first fluid channel layer away from the base substrate, a foundation layer throughhole extending through the foundation layer to connect to the first fluid channel; and a micropore layer on a side of the foundation layer away from the base substrate, a micropore extending through the micropore layer to connect to the first fluid channel through the foundation layer throughhole. The micropore layer extends into the foundation layer throughhole and at least partially covers an inner wall of the foundation layer throughhole.
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公开(公告)号:US11219894B2
公开(公告)日:2022-01-11
申请号:US16647386
申请日:2019-09-24
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaochen Ma , Guangcai Yuan , Ce Ning , Xin Gu , Hehe Hu
Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebetween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.
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公开(公告)号:US20210331167A1
公开(公告)日:2021-10-28
申请号:US16475035
申请日:2018-08-01
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xiaochen Ma , Guangcai Yuan , Ce Ning , Song Liu
IPC: B01L3/00 , G01N27/414
Abstract: The present application provides a micro-channel structure. The micro-channel structure includes a base substrate; a rail layer on the base substrate and including a first rail and a second rail spaced apart from each other; and a wall layer on a side of the rail layer distal to the base substrate, and including a first wall and a second wall at least partially spaced apart from each other, thereby forming a micro-channel between the first wall and the second wall. The micro-channel has an extension direction along a plane substantially parallel to a main surface of the base substrate, the extension direction being substantially parallel to extension directions of the first rail and the second rail along the plane substantially parallel to the main surface of the base substrate.
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公开(公告)号:US11092866B2
公开(公告)日:2021-08-17
申请号:US16631331
申请日:2019-07-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Hehe Hu , Xiaochen Ma , Guangcai Yuan , Ce Ning , Xin Gu
IPC: G02F1/1368 , G02F1/1362
Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.
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公开(公告)号:US20210220824A1
公开(公告)日:2021-07-22
申请号:US16755911
申请日:2019-04-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Ce Ning , Xiaochen Ma , Hehe Hu , Guangcai Yuan , Xin Gu
IPC: B01L3/00
Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.
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公开(公告)号:US20210217784A1
公开(公告)日:2021-07-15
申请号:US16761335
申请日:2019-11-21
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Zhengliang Li , Jiayu He , Hehe Hu , Wenlin Zhang , Song Liu , Xiaochen Ma , Nianqi Yao , Jie Huang
IPC: H01L27/144
Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.
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公开(公告)号:US20190267559A1
公开(公告)日:2019-08-29
申请号:US16115009
申请日:2018-08-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Song Liu , Yu Wen , Jianming Sun , Zhengliang Li , Xiaochen Ma , Hehe Hu , Wenlin Zhang , Jianhua Du , Ce Ning
Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.
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