公开(公告)号：US11217614B2

公开(公告)日：2022-01-04

申请号：US16321658

申请日：2018-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qianqian Bu ,  Qingrong Ren ,  Jianming Sun

IPC: H01L27/146 ,  G06F3/042 ,  G06F3/041

Abstract: A photodetector and a manufacture method thereof, a touch substrate and a display panel are provided. The photodetector includes: a substrate; a polysilicon layer on the substrate including a first doped region and a second doped region; a transparent conductive film covering the first doped region of the polysilicon layer; and a metal electrode on the second doped region of the polysilicon layer. The conductive film, the metal electrode and the polysilicon layer constitute a photosensitive device.

公开(公告)号：US11011645B2

公开(公告)日：2021-05-18

申请号：US16446744

申请日：2019-06-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Guangcai Yuan ,  Feng Guan ,  Dongsheng Li ,  Jianming Sun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

公开(公告)号：US20200013902A1

公开(公告)日：2020-01-09

申请号：US16446744

申请日：2019-06-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Guangcai Yuan ,  Feng Guan ,  Dongsheng Li ,  Jianming Sun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

Abstract: The present disclosure discloses a thin film transistor and a manufacturing method thereof, an array substrate and a display device, and belongs to the field of semiconductor display technology. The active layer of the thin film transistor is made of a CIGS material. By manufacturing the active layer of the thin film transistor with the CIGS material, and the crystal defects of the CIGS are less than LTPS and IGZO, the mobility of the thin film transistor is higher, and the switching speed of the thin film transistor is faster, thereby being advantageous to further improve the resolution of the display device.

公开(公告)号：US20190267559A1

公开(公告)日：2019-08-29

申请号：US16115009

申请日：2018-08-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Song Liu ,  Yu Wen ,  Jianming Sun ,  Zhengliang Li ,  Xiaochen Ma ,  Hehe Hu ,  Wenlin Zhang ,  Jianhua Du ,  Ce Ning

IPC: H01L51/42 ,  H01L51/44

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

公开(公告)号：US11282974B2

公开(公告)日：2022-03-22

申请号：US16169365

申请日：2018-10-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Qingrong Ren ,  Jianming Sun ,  Yingwei Liu

IPC: H01L31/032 ,  H01L27/32 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/105 ,  H01L31/0296

Abstract: A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.

公开(公告)号：US10431701B2

公开(公告)日：2019-10-01

申请号：US15767605

申请日：2017-09-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jianming Sun ,  Rui Huang ,  Huili Wu

IPC: H01L31/02 ,  H01L31/0224 ,  G06K9/00 ,  H01L31/105 ,  H01L31/101 ,  H01L31/18 ,  H01L29/786 ,  H01L27/144

Abstract: The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

公开(公告)号：US10430635B2

公开(公告)日：2019-10-01

申请号：US15767704

申请日：2017-09-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Wei Yang ,  Jianming Sun ,  Yingwei Liu ,  Liangjian Li ,  Haisheng Wang ,  Yingming Liu

IPC: G06K9/00

Abstract: A fingerprint identification sensor, a fingerprint identification method and an electronic device are disclosed. The fingerprint identification sensor includes a substrate; a fingerprint sensing element disposed on the substrate and including a thin film transistor, an off-state leakage current of the thin film transistor varying with the intensity of light irradiating onto an active area thereof; and a fingerprint identification light source arranged to emit light that irradiates onto a finger and is reflected thereby, the reflected light irradiating onto the active area of the thin film transistor. Thus, the fingerprint identification can be realized conveniently, and the fingerprint identification sensor has at least one of the advantages like high sensitivity and simple structure.

公开(公告)号：US20190027499A1

公开(公告)日：2019-01-24

申请号：US15921964

申请日：2018-03-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Huili Wu ,  Jianming Sun ,  Shipei Li ,  Xiaolong He

IPC: H01L27/12 ,  G06F3/041 ,  G02F1/133 ,  H01L31/105

CPC classification number: H01L27/124 ,  G02F1/13306 ,  G02F2001/13312 ,  G06F3/0416 ,  G06K9/0004 ,  G09G2360/148 ,  H01L27/3269 ,  H01L31/105

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.