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    Surface acoustic wave device and communication terminal using the same
    12.
    发明授权
    Surface acoustic wave device and communication terminal using the same 失效
    表面声波装置和通信终端使用相同

    公开(公告)号：US07675387B2

    公开(公告)日：2010-03-09

    申请号：US11514229

    申请日：2006-09-01

    申请人： Kazuyuki Sakiyama ,  Kengo Asai ,  Atsushi Isobe ,  Kunio Matsumoto ,  Shinichi Fujiwara

    发明人： Kazuyuki Sakiyama ,  Kengo Asai ,  Atsushi Isobe ,  Kunio Matsumoto ,  Shinichi Fujiwara

    IPC分类号： H01L41/00

    CPC分类号： H03H9/02574 ,  H03H9/02834

    摘要： A surface acoustic wave device in the present invention is provided with a piezoelectric substrate, a supporting substrate being jointed to the piezoelectric substrate and including a material different in expansion coefficient from the piezoelectric substrate and an interdigital electrode for exciting a surface acoustic wave, the electrode being arranged on the surface of the piezoelectric substrate. Either the interdigital electrode or the piezoelectric substrate is configured so that the interdigital electrode is 40% or more to 70% or less as long as the piezoelectric substrate in the direction to which a surface acoustic wave propagates.

    摘要翻译： 本发明的声表面波装置具有压电基板，支撑基板与压电基板连接，并且具有与压电基板不同的膨胀系数的材料和用于激励表面声波的叉指电极，所述电极 布置在压电基板的表面上。 叉指电极或压电基板之间的配置使得叉指电极与表面声波传播方向上的压电基片一样长度为40％以上至70％以下。

    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator
    13.
    发明申请
    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
    薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器

    公开(公告)号：US20080111651A1

    公开(公告)日：2008-05-15

    申请号：US11979905

    申请日：2007-11-09

    申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    IPC分类号： H03H9/54 ,  H03H9/17

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

    摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

    摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。

    Surface acoustic wave device capable of suppressing spurious response due to non-harmonic higher-order modes
    15.
    发明授权
    Surface acoustic wave device capable of suppressing spurious response due to non-harmonic higher-order modes 失效
    能够抑制由非谐波高阶模式引起的寄生响应的声表面波器件

    公开(公告)号：US06346761B1

    公开(公告)日：2002-02-12

    申请号：US09492078

    申请日：2000-01-27

    申请人： Atsushi Isobe ,  Mitsutaka Hikita ,  Kengo Asai ,  Atsushi Sumioka

    发明人： Atsushi Isobe ,  Mitsutaka Hikita ,  Kengo Asai ,  Atsushi Sumioka

    IPC分类号： H01L4104

    CPC分类号： H03H9/1452 ,  H03H9/02818

    摘要： A surface acoustic wave device which includes a piezoelectric substrate, and an interdigital transducer formed on a planar surface of the piezoelectric substrate, and having first and second bus bars, a first plurality of electrode fingers connected to the first bus bar, and a second plurality of electrode fingers connected to the second bus bar. The first and second plurality of electrode fingers of the interdigital transducer have an electrode cross region in which the first and second plurality of electrode fingers are arranged alternatively. Each boundary between the first and second bus bars and a grating region of the first and second plurality of electrode fingers is arranged such that the boundary is not substantially parallel, with a transmission direction of surface acoustic waves excited by the interdigital transducer.

    摘要翻译： 一种表面声波装置，包括压电基片和形成在压电基片的平面上的叉指换能器，并具有第一和第二汇流条，连接到第一汇流条的第一多个电极指，以及第二多个 的电极指连接到第二汇流条。 叉指式换能器的第一和第二多个电极指具有交替布置第一和第二多个电极指的电极交叉区域。 第一和第二母线之间的每个边界以及第一和第二多个电极指的光栅区域被布置成使得边界基本上不平行，并且由叉指换能器激发的表面声波的透射方向。

    Surface acoustic wave equipment
    16.
    发明授权
    Surface acoustic wave equipment 失效
    表面声波设备

    公开(公告)号：US5814917A

    公开(公告)日：1998-09-29

    申请号：US676683

    申请日：1996-07-10

    申请人： Atsushi Isobe ,  Mitsutaka Hikita ,  Chisaki Takubo ,  Kengo Asai

    发明人： Atsushi Isobe ,  Mitsutaka Hikita ,  Chisaki Takubo ,  Kengo Asai

    IPC分类号： H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H01L41/04

    CPC分类号： H03H9/02559 ,  H03H9/14538

    摘要： Aluminum is used for the interdigital transducer mounted on a piezoelectric substrate to realize a surface acoustic wave transducer having a small capacity ratio, no spurious resonance, and a low loss. A .theta. rotated Y cut lithium niobate single crystal piezoelectric substrate is used for the piezoelectric material, a metal film of which principal ingredient is aluminum is used for the interdigital transducer, the direction of the interdigital transducer is made parallel to the X-axis of the lithium niobate single crystal, and thick h and electrode pitch P of the interdigital transducer have the following relationship: (.theta.+5).sup.2 /300+11/12.ltoreq.h/P.times.100-8.ltoreq.-0.0001.times.(.theta.+5).sup.3 +0.1625.times.(.theta.+5)+5.5 and -30.ltoreq..theta..ltoreq.20.

    摘要翻译： 铝用于安装在压电基板上的叉指换能器，以实现具有小容量比，无杂散谐振和低损耗的表面声波换能器。 使用θ旋转的Y切割的铌酸锂单晶压电基板用于压电材料，主要成分为铝的金属膜用于叉指式换能器，叉指式换能器的方向与X轴的X轴平行 铌酸锂单晶，并且叉指换能器的厚h和电极间距P具有以下关系：（θ+5）2/300 + 11/12

    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator
    17.
    发明授权
    Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator 有权
    薄膜压电振动器，薄膜压电体声波谐振器和使用这种谐振器的射频滤波器

    公开(公告)号：US07940145B2

    公开(公告)日：2011-05-10

    申请号：US11979905

    申请日：2007-11-09

    申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

    IPC分类号： H03H9/205

    CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

    摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

    摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。

    Piezoelectric thin film resonator, piezoelectric thin film resonator filter and manufacturing method thereof
    18.
    发明授权
    Piezoelectric thin film resonator, piezoelectric thin film resonator filter and manufacturing method thereof 失效
    压电薄膜谐振器，压电薄膜谐振滤波器及其制造方法

    公开(公告)号：US07745975B2

    公开(公告)日：2010-06-29

    申请号：US11704995

    申请日：2007-02-12

    申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

    发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

    IPC分类号： H01L41/08

    CPC分类号： H03H9/175 ,  H03H3/04 ,  H03H9/02149 ,  H03H9/173 ,  H03H9/174 ,  H03H9/21 ,  H03H9/706 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  H03H2003/026 ,  Y10T29/42

    摘要： A piezoelectric thin film resonator includes: a piezoelectric thin film; a laminated structure which includes a first metal electrode film and a second metal electrode film that interpose at least a part of the piezoelectric thin film, and which is formed on a substrate; and an acoustic insulating layer which is formed on the substrate at a position corresponding to the laminated structure, wherein the first metal electrode film is formed on the substrate and the second metal electrode film is formed on the first metal electrode film while sandwiching the piezoelectric thin film, and a protection film laminated on the second metal electrode film is provided so as to cover the second metal electrode film.

    摘要翻译： 压电薄膜谐振器包括：压电薄膜; 层压结构，其包括第一金属电极膜和介于所述压电薄膜的至少一部分之间并形成在基板上的第二金属电极膜; 以及声学绝缘层，其在与所述层叠结构相对应的位置处形成在所述基板上，其中，所述第一金属电极膜形成在所述基板上，并且所述第二金属电极膜形成在所述第一金属电极膜上，同时夹着所述压电薄片 膜和层叠在第二金属电极膜上的保护膜设置成覆盖第二金属电极膜。