发明申请
US20050168102A1 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator
审中-公开
薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
- 专利标题： Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator
- 专利标题（中）： 薄膜体声波谐振器，薄膜体声波谐振滤波器及薄膜体声波谐振器的制造方法
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申请号： US10909335申请日： 2004-08-03
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公开(公告)号： US20050168102A1公开(公告)日： 2005-08-04
- 发明人: Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
- 申请人： Hisanori Matsumoto , Kengo Asai , Atsushi Isobe , Mitsutaka Hikita
- 专利权人： Hitachi Media Electronics Co., Ltd.
- 当前专利权人： Hitachi Media Electronics Co., Ltd.
- 优先权： JP2004-027590 20040204
- 主分类号： H03H9/54
- IPC分类号： H03H9/54 ; H01L41/08 ; H03H3/02 ; H03H3/04 ; H03H9/02 ; H03H9/17 ; H03H9/56 ; H03H9/70
摘要：
The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
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