METHOD FOR CONTROLLING THE SYNTHESIS OF A BLOCK COPOLYMER CONTAINING AT LEAST ONE NONPOLAR BLOCK AND AT LEAST ONE POLAR BLOCK AND USE OF SAID BLOCK COPOLYMER IN APPLICATIONS OF NANOLITHOGRAPHY BY DIRECT SELF-ASSEMBLY
    13.
    发明申请
    METHOD FOR CONTROLLING THE SYNTHESIS OF A BLOCK COPOLYMER CONTAINING AT LEAST ONE NONPOLAR BLOCK AND AT LEAST ONE POLAR BLOCK AND USE OF SAID BLOCK COPOLYMER IN APPLICATIONS OF NANOLITHOGRAPHY BY DIRECT SELF-ASSEMBLY 有权
    用于控制含至少一个非绝缘块和至少一个极性块的嵌段共聚物的合成方法和通过直接自组装在纳米尺度应用中使用嵌段共聚物

    公开(公告)号:US20160168305A1

    公开(公告)日:2016-06-16

    申请号:US14971661

    申请日:2015-12-16

    Applicant: Arkema France

    Abstract: A method for controlling the synthesis of a block copolymer containing at least two blocks, with at least one nonpolar block and at least one polar block, said method making it possible in particular to control the ratio between the blocks and the molecular weight of each of the blocks, said copolymer being a block copolymer intended to be used as a mask in a method of nanolithography by direct self-assembly (DSA), said control being achieved by semicontinuous anionic polymerization in an aprotic nonpolar medium and comprising the following steps: synthesizing a first nonpolar block in the form of a macro-initiator, preparing a solution of said macro-initiator previously synthesized by mixing it with an alkali metal alcoholate in an aprotic nonpolar solvent, preparing a solution of a polar monomer in an aprotic nonpolar solvent, injecting the two solutions previously prepared of macro-initiator and of polar monomer into a micro-mixer, connected to a polymerization reactor, at a constant flow ratio, recovering the copolymer obtained.

    Abstract translation: 用于控制含有至少两个嵌段的嵌段共聚物的合成方法,其中至少一个非极性嵌段和至少一个极性嵌段,所述方法使得可以特别地控制嵌段之间的比例和每个嵌段的分子量 所述共聚物是在直接自组装(DSA)的纳米光刻方法中用作掩模的嵌段共聚物,所述对照通过非质子非极性介质中的半连续阴离子聚合实现,并包括以下步骤:合成 以大分子引发剂的形式存在的第一非极性嵌段,通过将非离子非极性溶剂中的碱金属醇化物混合而制备前述合成的所述大分子引发剂的溶液,在非质子非极性溶剂中制备极性单体的溶液, 将预先制备的大分子引发剂和极性单体的两种溶液注入与聚合反应器连接的微型混合器中, t流量比,回收得到的共聚物。

    METHOD FOR MANUFACTURING A NANOLITHOGRAPHY MASK
    14.
    发明申请
    METHOD FOR MANUFACTURING A NANOLITHOGRAPHY MASK 有权
    制造纳米尺度掩模的方法

    公开(公告)号:US20150331313A1

    公开(公告)日:2015-11-19

    申请号:US14654277

    申请日:2013-12-16

    Abstract: The invention concerns a manufacturing method for nanolithography masks from a PS-b-PMMA block copolymer film deposited on a surface to be etched, said copolymer film comprising PMMA nanodomains orientated perpendicularly to the surface to be etched, said method being characterized in that it comprises the following steps: partially irradiating said copolymer film to form a first irradiated area and a second non-irradiated area in said copolymer film, then treating said copolymer film in a developer solvent to selectively remove at least said PMMA nanodomains of said first irradiated area of said copolymer film.

    Abstract translation: 本发明涉及一种沉积在被蚀刻表面上的PS-b-PMMA嵌段共聚物膜的纳米光刻掩模的制造方法,所述共聚物膜包含垂直于被蚀刻表面定向的PMMA纳米域,所述方法的特征在于它包括 以下步骤:部分地照射所述共聚物膜以在所述共聚物膜中形成第一照射区域和第二未照射区域,然后在显影剂溶剂中处理所述共聚物膜以选择性地除去所述第一照射区域的至少所述PMMA纳米域 所述共聚物膜。

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