公开(公告)号：US20220293793A1

公开(公告)日：2022-09-15

申请号：US17805161

申请日：2022-06-02

Applicant: Applied Materials, Inc.

Inventor： Jianheng LI ,  Lai ZHAO ,  Yujia ZHAI ,  Soo Young CHOI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L21/02 ,  H01L27/32 ,  H01L51/05

Abstract: Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode 204 is disposed over the gate dielectric layer. The gate dielectric layer has a Dit of about 5e10 cm−2eV−1 to about 5e11 cm−2eV−1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

公开(公告)号：US20180026055A1

公开(公告)日：2018-01-25

申请号：US15617888

申请日：2017-06-08

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Lai ZHAO ,  Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Yujia ZHAI

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02 ,  H01L29/49

CPC classification number: H01L27/1255 ,  H01L27/1222 ,  H01L27/1237 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1262 ,  H01L28/55 ,  H01L29/4908 ,  H01L29/78675

Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include source and drain electrodes formed on a substrate, a gate insulating layer formed on a substrate covering the source and drain electrodes, wherein the gate insulating layer is hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer comprising metal, and a gate electrode formed above or below the gate insulating layer

公开(公告)号：US20240088301A1

公开(公告)日：2024-03-14

申请号：US18307846

申请日：2023-04-27

Applicant: Applied Materials, Inc.

Inventor： Jianheng LI ,  Lai ZHAO ,  Yujia ZHAI ,  Soo Young CHOI

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/45 ,  H10K10/46 ,  H10K59/12

CPC classification number: H01L29/7869 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L27/1225 ,  H01L29/45 ,  H10K10/462 ,  H10K10/472 ,  H10K59/12 ,  H01L29/66969

Abstract: Embodiments described herein provide thin film transistors (TFTs) and processes to reduce plasma induced damage in TFTs. In one embodiment, a buffer layer is disposed over a substrate and a semiconductor layer is disposed over the buffer layer. A gate dielectric layer is disposed over the semiconductor layer. The gate dielectric layer contacts the semiconductor layer at an interface. The gate electrode 204 is disposed over the gate dielectric layer. The gate dielectric layer has a Dit of about 5e10 cm−2eV−1 to about 5e11 cm−2eV−1 and a hysteresis of about 0.10 V to about 0.30 V improve performance capability of the TFT while having a breakdown field between about 6 MV/cm and about 10 MV/cm.

公开(公告)号：US20220013547A1

公开(公告)日：2022-01-13

申请号：US17487086

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Lai ZHAO ,  Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Yujia ZHAI

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/49 ,  H01L29/786

Abstract: Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.

公开(公告)号：US20210288084A1

公开(公告)日：2021-09-16

申请号：US17332766

申请日：2021-05-27

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Soo Young CHOI ,  Shinichi KURITA ,  Yujia ZHAI ,  Lai ZHAO

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  H01L21/687 ,  H01L21/67

Abstract: Embodiments of the present disclosure generally relate to a layer stack including a high K dielectric layer formed over a first dielectric layer and a metal electrode. The high K dielectric layer has a K value of 20 or higher and may be formed as a part of a capacitor, a gate insulating layer, or any suitable insulating layer in electronic devices, such as display devices. The layer stack includes a second dielectric layer disposed on the first dielectric layer and the metal layer, and the high K dielectric layer containing zirconium dioxide or hafnium dioxide disposed on the second dielectric layer. The second dielectric layer provides a homogenous surface on which the high K dielectric layer is formed. The homogeneous surface enables the high K dielectric material to be deposited uniformly thereover, resulting in a uniform thickness profile.

公开(公告)号：US20200258918A1

公开(公告)日：2020-08-13

申请号：US15773640

申请日：2017-07-11

Applicant: Applied Materials, Inc.

Inventor： Xiangxin RUI ,  Lai ZHAO ,  Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Yujia ZHAI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as low film current leakage and desired film qualities for display applications. In one embodiment, a thin film transistor structure includes a dielectric layer formed on a substrate, wherein the dielectric layer is a zirconium containing material comprising aluminum, and gate, source and drain electrodes formed on the substrate, wherein the gate, source and drain electrodes formed above or below the dielectric layer.

公开(公告)号：US20180350571A1

公开(公告)日：2018-12-06

申请号：US15613862

申请日：2017-06-05

Applicant: Applied Materials, Inc.

Inventor： Yujia ZHAI ,  Wenqing DAI ,  Lai ZHAO ,  Xiangxin RUI ,  Dong Kil YIM ,  Tae Kyung WON ,  Soo Young CHOI

IPC: H01J37/32 ,  C22F1/18 ,  C23C16/455 ,  C23C16/44

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a substrate-processing chamber. In one implementation, a method for cleaning a processing chamber is provided. The method comprises introducing a reactive species into a processing chamber having a residual ZrO2 containing film formed on one or more interior surfaces of the processing chamber. The reactive species is formed from BCl3 and the one or more interior surfaces includes at least one exposed Al2O3 surface The method further comprises reacting the residual ZrO2 containing film with the reactive species to form a volatile product. The method further comprises removing the volatile product from the processing chamber, wherein a removal rate of the residual ZrO2 containing film is greater than a removal rate of Al2O3.

公开(公告)号：US20180345330A1

公开(公告)日：2018-12-06

申请号：US16007876

申请日：2018-06-13

Applicant: Applied Materials, Inc.

Inventor： Yujia ZHAI ,  Lai ZHAO ,  Xiangxin RUI ,  Dong-Kil YIM ,  Tae Kyung WON ,  Soo Young CHOI

IPC: B08B7/00 ,  H01J37/32 ,  B08B9/00 ,  C23C16/44

Abstract: In one implementation, a method for cleaning a processing chamber is provided. The method comprises introducing a reactive species into a processing chamber having a residual high-k dielectric material formed on one or more interior surfaces of the processing chamber. The reactive species is formed from a halogen-containing gas mixture and the one or more interior surfaces include at least one surface having a coating material formed thereon. The method further comprises reacting the residual high-k dielectric material with the reactive species to form a volatile product. The method further comprises removing the volatile product from the processing chamber. The removal rate of the residual high-k dielectric material is greater than a removal rate of the coating material. The high-k dielectric material is selected from zirconium dioxide (ZrO2) and hafnium dioxide (HfO2). The coating material includes a compound selected from alumina (Al2O3), yttrium-containing compounds, and combinations thereof.